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STMicroelectronics STB120N4F6
- Part No.:
- STB120N4F6
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB120N4F6.pdf
- Description:
- MOSFET N-CH 40V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:744
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Product details
Overview
STB120N4F6 from STMicroelectronics is an automotive-grade N-channel Power MOSFET using STripFET™ F6 DeepGATE™ technology, rated for 40 V VDS, 3.5 mΩ typ. RDS(on) at VGS = 10 V and 40 A, and 80 A continuous drain current in D²PAK (TO-263) package. It serves as a high-efficiency main switch in 12 V automotive power distribution systems.
For engineers reviewing the STB120N4F6 datasheet, STB120N4F6 pinout, STB120N4F6 application, or STB120N4F6 equivalent, key selection criteria include its AEC-Q101 qualification, low gate charge (65 nC), high avalanche energy rating (394 mJ), thermal resistance (1.36 °C/W junction-to-case), and suitability for high-current DC-DC and motor control switching.
Technical Context
This MOSFET employs a 6th-generation STripFET™ F6 process with optimized gate structure to minimize RDS(on) and gate charge simultaneously. Its design targets low conduction and switching losses in high-duty-cycle automotive loads.
The device features robust unclamped inductive switching capability (EAS = 394 mJ), a 1.1 V source-drain diode forward voltage at 40 A, and reverse recovery time of 40 ns - enabling fast, reliable hard-switching in battery protection and BLDC gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) typ. | 3.5 mΩ at VGS = 10 V, ID = 40 A - Enables <1.4 W conduction loss at 80 A, reducing heatsink requirements. |
| Qg | 65 nC - Low gate drive energy supports efficient PWM operation up to 100 kHz with standard gate drivers. |
| EAS | 394 mJ - High single-pulse avalanche ruggedness allows safe operation during inductive turn-off without snubbers. |
| Rthj-case | 1.36 °C/W - Enables 80 W continuous dissipation at TC = 100 °C, supporting high-power density PCB layouts. |
| ID cont. | 80 A at TC = 25 °C and TC = 100 °C - Sustains full rated current across full automotive temperature range without derating. |
| VGS(th) | 2–4 V - Compatible with 3.3 V and 5 V logic-level gate drive, eliminating need for level-shifting circuitry. |
Pinout & Package
D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection. Three-terminal configuration: Gate (Pin 1), Source (Pin 2), Drain (Tab/Pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts 0–10 V logic-level signals; low input capacitance (Ciss = 3850 pF) minimizes driver loading. |
| Pin 2 | Source | Reference node for gate drive and current sensing; tied to system ground or low-side shunt in half-bridge topologies. |
| Tab / Pin 3 | Drain | Main power output path; electrically and thermally connected to PCB copper pour; requires isolation from other layers per JEDEC TO-263 layout guidelines. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood applications per stress test requirements including HTOL, TC, HTRB, and UHAST. |
| Low RDS(on) × Qg figure-of-merit | 260 mΩ·nC - Optimized trade-off between conduction and switching loss for high-frequency DC-DC converters. |
| High dV/dt immunity | Rated > 50 V/ns - Resists false turn-on in noisy automotive environments without external gate clamping. |
| Enhanced avalanche ruggedness | 394 mJ EAS at Tj = 25 °C - Supports reliable operation in unclamped inductive switching without external protection. |
| ECOPACK® compliant | Halogen-free, RoHS-compliant packaging with lead-free terminations meeting automotive environmental standards. |
Applications
| Automotive Body Control Module (BCM) | 12 V Battery Disconnect Switch |
|---|---|
Use Scenario: Controlling headlight, wiper, and HVAC loads in centralized vehicle body electronics. IC Role / Device Role / Timing Role: High-side power switch managing up to 80 A peak load currents with fast turn-on/turn-off (<100 ns total switching time). Use Value: Eliminates mechanical relay wear-out and reduces system BOM cost while maintaining AEC-Q101 reliability over 15-year vehicle lifetime. |
Use Scenario: Isolating starter battery from auxiliary circuits during engine cranking or fault conditions. IC Role / Device Role / Timing Role: Main contactor replacement in smart battery management systems, operating at 100% duty cycle with thermal monitoring. Use Value: 3.5 mΩ RDS(on) limits voltage drop to <280 mV at 80 A, preserving cranking voltage margin and enabling compact heatsink design. |
| BLDC Motor Phase Driver (Low-Side) | Automotive DC-DC Converter Primary Switch |
Use Scenario: Low-side switching in 3-phase 12 V fan or pump motor controllers. IC Role / Device Role / Timing Role: Fast-switching power stage element with 40 ns fall time and 70 ns rise time driving 100 kHz PWM. Use Value: 40 ns tf and 350 pF Crss reduce shoot-through risk and improve efficiency in synchronous rectification topologies. |
Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V buck converter supplying ADAS sensors and infotainment ECUs. IC Role / Device Role / Timing Role: High-current, high-efficiency switching element operating at 250 kHz with minimal gate drive loss (65 nC Qg). Use Value: 65 nC total gate charge enables use of low-power gate drivers (e.g., STGAP2S), reducing auxiliary supply complexity and board space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N04LS6 | RDS(on) = 1.4 mΩ (lower), Qg = 72 nC (higher), same D²PAK package, AEC-Q101 qualified. | Better conduction loss but higher switching loss; requires stronger gate driver due to higher Qg. | Select when minimizing I²R loss dominates over gate drive power and layout space permits larger driver IC. |
| ON Semiconductor NTMFS4C09NT1G | RDS(on) = 3.8 mΩ (slightly higher), Qg = 52 nC (lower), same D²PAK, AEC-Q101 qualified. | Lower gate charge improves switching efficiency at high frequency but increases conduction loss by ~8% at 80 A. | Select when operating above 200 kHz or where gate drive power budget is constrained, accepting modest thermal penalty. |
Compared with BSC014N04LS6 and NTMFS4C09NT1G, STB120N4F6 delivers the optimal balance of ultra-low RDS(on) and moderate Qg for 100–200 kHz automotive switching, with proven thermal performance in D²PAK mounting configurations used in production BCMs and battery disconnect modules.
Availability
STB120N4F6 is available at Aetrix Electronics and suitable for automotive body control modules, battery disconnect systems, and BLDC motor drives requiring stable component supply across extended product lifecycles.
Supply support for STB120N4F6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing capabilities.
The STripFET™ F6 series was developed specifically to meet stringent AEC-Q101 requirements for under-hood power switching, emphasizing low RDS(on), high avalanche energy, and thermal robustness in surface-mount packages.
FAQ
Is STB120N4F6 pin-compatible with STD120N4F6?
Yes - STB120N4F6 (D²PAK/TO-263) and STD120N4F6 (DPAK/TO-252) share identical electrical specifications and marking (120N4F6), but differ only in package outline and thermal resistance. Pin 1 (Gate), Pin 2 (Source), and Drain tab orientation match mechanically within their respective footprints.
What is the maximum recommended PCB copper area for thermal performance in D²PAK?
For optimal thermal performance, ST recommends a minimum 1 inch² (645 mm²) of 2 oz. copper on the primary side connected to the Drain tab. This achieves the specified Rthj-pcb = 35 °C/W and supports full 80 A current handling at TC = 100 °C.
Does STB120N4F6 require a gate resistor for automotive EMI compliance?
Yes - ST recommends a 4.7 Ω gate resistor (as used in Figure 15 test circuit) to limit dI/dt and suppress high-frequency ringing. This value balances switching speed (td(off) = 40 ns) with conducted EMI reduction in 12 V vehicle networks.
Can STB120N4F6 be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (see Figure 11) ensures inherent current sharing. ST's application note AN4379 confirms stable parallel operation with matched gate drive and symmetrical PCB layout, supporting >160 A total current with two devices.
STB120N4F6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- DeepGATE™, STripFET™ VI
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3850 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB120N4F6 FAQ
1.How can I place an order for STB120N4F6 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB120N4F6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB120N4F6 reliable?
The price and inventory of STB120N4F6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB120N4F6 is usually 5 days.
3.What payment methods are accepted for STB120N4F6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB120N4F6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB120N4F6?
STB120N4F6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB120N4F6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB120N4F6?
For technical support, including STB120N4F6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB120N4F6 requirements.
6.How does Aetrix verify that STB120N4F6 is sourced from the original manufacturer or authorized distributors?
All STB120N4F6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB120N4F6 meets industry standards.
7.What is the process for return or replacement of STB120N4F6?
All STB120N4F6 units undergo pre-shipment inspection (PSI). If there is an issue with STB120N4F6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB120N4F6 part is unused and in its original packaging.
Return procedure for STB120N4F6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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