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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB120N4LF6

Name: STB120N4LF6
Brand: STMicroelectronics
SKU: STB120N4LF6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB120N4LF6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB120N4LF6.pdf

Description:: MOSFET N-CH 40V 80A D2PAK

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Product details

Overview

STB120N4LF6 from STMicroelectronics is a 40 V N-channel STripFET™ VI DeepGATE™ Power MOSFET in D²PAK (TO-263) package, featuring 3.1 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current, and logic-level gate drive compatibility. It is designed for high-efficiency automotive switching applications requiring robust avalanche capability and low conduction loss.

For engineers reviewing the STB120N4LF6 datasheet, STB120N4LF6 pinout, STB120N4LF6 application, or STB120N4LF6 equivalent, this device is selected for its verified 40 V breakdown voltage, 394 mJ single-pulse avalanche energy, 1.36 °C/W junction-to-case thermal resistance, and D²PAK mechanical footprint compliance per IEC 60134.

Technical Context

This MOSFET employs ST's STripFET™ VI process with DeepGATE™ gate architecture to minimize R_DS(on) while maintaining fast switching performance: t_d(on) = 15 ns, t_f = 45 ns, and Q_g = 80 nC at V_DD = 20 V, I_D = 80 A. Its source-drain diode exhibits 1.1 V forward voltage at I_SD = 40 A and 50 ns reverse recovery time under specified test conditions.

The device operates over T_j = –55 °C to 175 °C, supports ±20 V gate-source voltage, and delivers 110 W total dissipation at T_C = 25 °C. Its safe operating area (SOA) is characterized up to 10 ms pulse width at T_j = 175 °C, enabling reliable use in inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines maximum system bus voltage compatibility.
R_DS(on)	3.1 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A, critical for thermal management in compact automotive modules.
I_D (continuous)	80 A @ T_C = 25 °C - Sustained current handling capacity with heatsink mounting; derates to same value at T_C = 100 °C per datasheet.
E_AS	394 mJ - Single-pulse unclamped inductive switching energy rating; ensures ruggedness in motor control and solenoid drive.
Q_g	80 nC - Total gate charge at V_DD = 20 V; determines driver power requirement and switching speed trade-off.
R_thj-case	1.36 °C/W - Junction-to-case thermal resistance; enables accurate die temperature estimation using heatsink interface measurements.
t_r/t_f	95 ns / 45 ns - Rise/fall times under 20 V V_DD, 40 A I_D, 4.7 Ω gate resistor; defines minimum PWM frequency and EMI profile.

Pinout & Package

D²PAK (TO-263) package: 3-terminal surface-mount power package with exposed drain pad for thermal and electrical connection; dimensions per Table 9 (Doc ID 16919 Rev 2), including 9.35 mm width, 15.85 mm length, and 3.50 mm height.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or return path; carries full load current during conduction.
Pin 2 (Gate)	Control input	Logic-level compatible (V_GS(th) = 1–3 V); requires <80 nC charge for full enhancement; isolated from power path.
Pin 3 (Drain)	Power output	Connected to exposed metal tab on underside; serves as primary current path and thermal interface to PCB copper pour or heatsink.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with V_GS ≥ 5 V, eliminating need for gate boosters in 5 V microcontroller systems.
100% avalanche tested	Each unit validated for 40 A I_AV and 394 mJ E_AS; guarantees ruggedness in unclamped inductive switching without external snubbers.
STripFET™ VI + DeepGATE™	Proprietary cell structure reduces R_DS(on) by >15% vs prior generation while maintaining SOA integrity and gate charge linearity.
Low R_thj-pcb	35 °C/W junction-to-PCB (1 inch², 2 oz Cu); enables effective passive cooling in space-constrained automotive ECUs without discrete heatsinks.

Applications

Automotive Door Module

Engine Control Unit (ECU) Injector Driver

Use Scenario: High-side or low-side switching of window lift motors, mirror actuators, and door lock solenoids in 12 V battery systems.

IC Role / Device Role / Timing Role: Power switch controlling bidirectional motor current; handles repetitive 80 A peak pulses during stall conditions.

Use Value: 3.1 mΩ R_DS(on) limits I²R loss to <21 W at 80 A, reducing thermal stress and enabling smaller PCB copper areas than alternatives with >5 mΩ.

Use Scenario: Driving fuel injectors in gasoline direct injection (GDI) systems with precise 1–5 ms pulse widths and 12 V supply.

IC Role / Device Role / Timing Role: Low-side switch sinking injector coil current; must withstand 320 A pulsed drain current during fault conditions.

Use Value: 394 mJ E_AS rating ensures survival during injector coil flyback events without external clamping diodes.

Electric Power Steering (EPS) Assist Motor Driver

12 V DC-DC Converter Primary Switch

Use Scenario: Half-bridge leg in 12 V EPS motor inverter, switching at 20–50 kHz with 40–60 A RMS phase current.

IC Role / Device Role / Timing Role: High-frequency power switch; gate driven by dedicated gate driver IC with 4.7 Ω series resistance.

Use Value: 80 nC Q_g and 45 ns t_f enable efficient operation at 50 kHz with <1.5 W switching loss per device under typical conditions.

Use Scenario: Primary-side synchronous rectifier or high-side switch in isolated 12 V buck-boost converters for vehicle infotainment systems.

IC Role / Device Role / Timing Role: Main power switch in hard-switched topology; subjected to 40 V V_DS stress and 80 A transient currents.

Use Value: 40 V V_DS rating matches automotive 12 V nominal + load dump margin; 1.36 °C/W R_thj-case allows direct thermal coupling to converter heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.7 mΩ @ 10 V; higher gate charge (130 nC); TO-220 package only.	Larger footprint and worse thermal resistance (1.7 °C/W); unsuitable for surface-mount automotive modules.	Select when through-hole mounting and lower cost outweigh thermal and layout constraints.
IXTH80N40L2	R_DS(on) = 4.2 mΩ @ 10 V; 120 nC Q_g; TO-247 package; no avalanche rating published.	Higher switching losses and no guaranteed E_AS spec; requires external protection in inductive loads.	Select only for non-automotive industrial switching where avalanche immunity is not required.

Compared with IRF1404ZPBF and IXTH80N40L2, STB120N4LF6 offers superior R_DS(on), lower Q_g, D²PAK surface-mount compatibility, and factory-verified avalanche ruggedness-making it the preferred choice for space-constrained, safety-critical automotive power stages.

Availability

STB120N4LF6 is available at Aetrix Electronics and suitable for automotive door modules, engine control units, electric power steering systems, and 12 V DC-DC converters requiring stable component supply across production lifecycles.

Supply support for STB120N4LF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities.

STB120N4LF6 belongs to the STripFET™ VI DeepGATE™ power MOSFET product line, engineered specifically for high-current, high-reliability automotive switching applications demanding low R_DS(on), logic-level drive, and certified avalanche performance.

FAQ

Is STB120N4LF6 qualified for automotive applications?

Yes. STB120N4LF6 is manufactured and tested per AEC-Q101 requirements for discrete semiconductors. Its datasheet specifies operation from –55 °C to 175 °C junction temperature, 100% avalanche testing, and qualification for automotive body electronics, chassis, and powertrain systems per ST's automotive-grade product definition.

What is the maximum gate-source voltage rating?

The absolute maximum V_GS is ±20 V, as defined in Table 2 of the official datasheet (Doc ID 16919 Rev 2). Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS within ±15 V, especially during transients or hot-plug events.

Does STB120N4LF6 include an integrated body diode?

Yes. It features a monolithic source-drain body diode with V_SD = 1.1 V at I_SD = 40 A and T_j = 25 °C, t_rr = 50 ns, and Q_rr = 85 nC under specified test conditions (Table 8). This diode is intrinsic to the MOSFET structure and supports freewheeling in inductive switching topologies.

Can STB120N4LF6 be used in parallel configurations?

Yes, but with design precautions. Its positive temperature coefficient for R_DS(on) (see Figure 11) enables current sharing; however, matched gate drive impedance, symmetrical PCB layout, and individual gate resistors are mandatory. Derating total current by ≥20% is recommended to account for parametric spread and thermal coupling.

STB120N4LF6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB120N4LF6 FAQ

1.How can I place an order for STB120N4LF6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB120N4LF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB120N4LF6 reliable?

The price and inventory of STB120N4LF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB120N4LF6 is usually 5 days.

3.What payment methods are accepted for STB120N4LF6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB120N4LF6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB120N4LF6?

STB120N4LF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB120N4LF6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB120N4LF6?

For technical support, including STB120N4LF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB120N4LF6 requirements.

6.How does Aetrix verify that STB120N4LF6 is sourced from the original manufacturer or authorized distributors?

All STB120N4LF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB120N4LF6 meets industry standards.

7.What is the process for return or replacement of STB120N4LF6?

All STB120N4LF6 units undergo pre-shipment inspection (PSI). If there is an issue with STB120N4LF6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB120N4LF6 part is unused and in its original packaging.

Return procedure for STB120N4LF6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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