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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB12NM50FDT4

Name: STB12NM50FDT4
Brand: STMicroelectronics
SKU: STB12NM50FDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB12NM50FDT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB12NM50FDT4.pdf

Description:: MOSFET N-CH 500V 12A D2PAK

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Product details

Overview

STB12NM50FDT4 from STMicroelectronics is an N-channel 500 V, 0.32 Ω (typ), 12 A FDmesh™ Power MOSFET with integrated fast-recovery body diode in D²PAK (TO-263) package. It delivers high avalanche ruggedness, low gate charge (12 nC), and 20 V/ns dv/dt capability-designed for ZVS phase-shift converters and hard-switched bridge topologies in industrial SMPS.

For engineers reviewing the STB12NM50FDT4 datasheet, STB12NM50FDT4 pinout, STB12NM50FDT4 application, or STB12NM50FDT4 equivalent, key selection criteria include R_DS(on) at 10 V, reverse recovery time (140 ns @ T_j=25°C), total gate charge, avalanche energy rating (400 mJ), and thermal resistance (R_thj-case = 0.77 °C/W).

Technical Context

This MOSFET employs ST's FDmesh™ process to co-optimize conduction loss, switching speed, and body diode performance. Its intrinsic fast diode achieves t_rr = 140 ns and Q_rr = 800 nC at 25°C, enabling reduced snubber losses in synchronous rectification and resonant topologies.

The device features 100% unclamped inductive switching (UIS) tested to 6 A avalanche current and 400 mJ single-pulse energy, with tight V_GS(th) distribution (3–5 V) and low input capacitance (C_iss = 1000 pF @ 25 V) for stable gate drive in high-frequency (>100 kHz) power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC bus designs with 25% voltage margin for transient spikes
R_DS(on)	0.32 Ω (typ) @ V_GS = 10 V - enables ≤0.46 W conduction loss at 12 A continuous drain current
I_D (cont)	12 A @ T_C = 25°C - rated for high-current primary-side switching in 500–1000 W converters
Q_g	12 nC - reduces gate driver power demand and switching transition time in 100–300 kHz operation
t_rr	140 ns @ T_j = 25°C - minimizes commutation loss and EMI in bridge-leg turn-off events
E_AS	400 mJ - ensures robustness against inductive load transients without external clamping
R_thj-case	0.77 °C/W - allows 160 W dissipation with ≤124°C junction rise above 25°C case temperature

Pinout & Package

STB12NM50FDT4 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), Source (S). The exposed drain pad provides low-inductance, high-current path and thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level drive; low 2 Ω gate input resistance simplifies RC damping network design
2 (Drain)	High-side power output	Connected to DC bus or transformer primary; electrically tied to exposed metal tab for thermal and current return path
3 (Source)	Power reference / return	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
FDmesh™ silicon architecture	Simultaneously optimizes R_DS(on), C_oss, and body diode Q_rr-enabling higher efficiency in soft-switching topologies
Fast intrinsic body diode	t_rr = 140 ns and Q_rr = 800 nC @ 25°C-reduces dead-time loss and eliminates need for external Schottky parallel diodes
100% UIS tested	Rated for 6 A repetitive avalanche current and 400 mJ single-pulse energy-ensures reliability under short-circuit or overload conditions
Low C_iss/C_oss ratio	C_iss = 1000 pF, C_oss = 390 pF @ 25 V-improves Miller immunity and enables stable operation with moderate gate resistors

Applications

Industrial SMPS

ZVS Phase-Shift Converter

Use Scenario: 800 W telecom rectifier operating from 380–400 V DC bus with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge topology; handles 12 A peak drain current and absorbs reverse recovery energy during zero-voltage turn-on.

Use Value: Low Q_g and fast t_rr reduce switching loss by ≥18% versus standard 500 V MOSFETs, improving system efficiency from 92.1% to 93.7%.

Use Scenario: Isolated DC-DC module for server power supply with 12 V output and 60 A load.

IC Role / Device Role / Timing Role: Lagging-leg switch in phase-shifted full-bridge; conducts during ZVS interval and recovers body diode current before turn-on.

Use Value: Tight V_GS(th) tolerance (3–5 V) and low C_oss ensure consistent ZVS boundary across temperature, eliminating hard-switching failures.

Motor Drive Inverter

UPS Output Stage

Use Scenario: 3 kW HVAC compressor inverter using six-pack IGBT replacement with discrete MOSFET half-bridges.

IC Role / Device Role / Timing Role: Upper switch in three-phase leg; blocks 500 V DC link while conducting motor back-EMF current through body diode during PWM off-time.

Use Value: 1.5 V V_SD at 12 A enables lower conduction loss than 1200 V IGBTs in 400 V systems, reducing heatsink size by 35%.

Use Scenario: Online double-conversion UPS with bidirectional 48 V battery interface and 230 V AC output.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter output stage; operates in reverse conduction mode during freewheeling intervals.

Use Value: Fast diode recovery (t_rr < 252 ns up to 150°C) prevents shoot-through risk during high-temperature operation, maintaining >96% conversion efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM50FD	Same die, TO-220 package; R_thj-case = 0.78 °C/W vs. 0.77 °C/W; no tape-and-reel option	Through-hole mounting only; unsuitable for automated SMT assembly	Select when manual prototyping or low-volume through-hole production is required
STW14NM50FD	14 A rating, TO-247 package; R_DS(on) = 0.32 Ω (same typ), but P_TOT = 160 W with R_thj-case = 0.77 °C/W	Higher current headroom and improved thermal mass for forced-air-cooled designs	Select when >12 A peak current or >100 W continuous dissipation is needed in open-frame systems

Compared with STP12NM50FD and STW14NM50FD, STB12NM50FDT4 uniquely combines SMT manufacturability, tight thermal resistance, and optimized body diode dynamics-making it the preferred choice for high-density, high-efficiency DC-DC modules where board space and thermal management are constrained.

Availability

STB12NM50FDT4 is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, motor drive inverters, and UPS output stages requiring stable component supply and long-term production continuity.

Supply support for STB12NM50FDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

The FDmesh™ Power MOSFET product line targets high-efficiency, high-reliability switching applications in industrial power supplies, renewable energy inverters, and motor control systems-emphasizing ruggedness, fast switching, and integrated diode performance.

FAQ

What is the maximum continuous drain current for STB12NM50FDT4 at 100°C case temperature?

The maximum continuous drain current is 7.5 A at T_C = 100°C, as specified in Table 1 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding 150°C junction temperature.

Does STB12NM50FDT4 require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No. STB12NM50FDT4 has a gate threshold voltage range of 3–5 V and is fully controllable with 0 V to 10 V gate drive. Its low gate input resistance (2 Ω) and tight V_GS(th) distribution provide noise immunity; negative bias is not required unless system-level EMI demands enhanced Miller immunity beyond datasheet specifications.

Can STB12NM50FDT4 replace STP12NM50FD in existing TO-220 layouts?

No-STB12NM50FDT4 uses a D²PAK (TO-263) footprint incompatible with TO-220 pads. While electrically equivalent, the package change requires PCB redesign: D²PAK has a 10 mm × 15.7 mm outline, exposed drain pad, and different thermal via pattern versus TO-220's 10.4 mm × 15.75 mm leaded outline.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150°C junction temperature?

At T_j = 150°C, Q_rr is 1890 nC (Table 7), more than double the 25°C value of 800 nC. This increase must be accounted for in gate drive sizing and snubber design to avoid excessive voltage overshoot during high-temperature diode commutation.

STB12NM50FDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB12NM50FDT4 FAQ

1.How can I place an order for STB12NM50FDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB12NM50FDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB12NM50FDT4 reliable?

The price and inventory of STB12NM50FDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB12NM50FDT4 is usually 5 days.

3.What payment methods are accepted for STB12NM50FDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB12NM50FDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB12NM50FDT4?

STB12NM50FDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB12NM50FDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB12NM50FDT4?

For technical support, including STB12NM50FDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB12NM50FDT4 requirements.

6.How does Aetrix verify that STB12NM50FDT4 is sourced from the original manufacturer or authorized distributors?

All STB12NM50FDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB12NM50FDT4 meets industry standards.

7.What is the process for return or replacement of STB12NM50FDT4?

All STB12NM50FDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB12NM50FDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB12NM50FDT4 part is unused and in its original packaging.

Return procedure for STB12NM50FDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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