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STMicroelectronics STB12NM50N
- Part No.:
- STB12NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB12NM50N.pdf
- Description:
- MOSFET N-CH 500V 11A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,458
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Product details
Overview
STB12NM50N from STMicroelectronics is an N-channel 500 V, 0.29 Ω (typ), 11 A MDmesh™ II Power MOSFET in D²PAK package, designed for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (30 nC), and low input capacitance (940 pF), enabling fast switching in offline SMPS and PFC stages.
For engineers reviewing the STB12NM50N datasheet, STB12NM50N pinout, STB12NM50N application, or STB12NM50N equivalent, key selection criteria include its 500 V VDSS, 0.38 Ω max RDS(on) at 10 VGS, 150 °C TJ(max), TO-263-compatible thermal resistance (Rthj-pcb = 30 °C/W), and unclamped inductive switching capability (EAS = 350 mJ).
Technical Context
This device implements ST's second-generation MDmesh™ vertical structure with strip layout, delivering industry-leading RDS(on) × Qg figure-of-merit for high-voltage power conversion. Its optimized cell design reduces both conduction loss and switching loss simultaneously.
The MOSFET supports hard-switched topologies up to 500 V DC bus, with verified diode recovery performance (trr = 340 ns, Qrr = 3.5 µC at Tj = 25 °C) and robust dv/dt immunity (15 V/ns rated, 44 V/ns measured). Gate threshold voltage is tightly specified (2–4 V) for reliable turn-on control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Supports 400 V AC mains-derived DC bus with 25% safety margin |
| RDS(on) max | 0.38 Ω @ VGS = 10 V, Tj = 25 °C - Enables <1.5 W conduction loss at 6 A RMS |
| ID cont | 11 A @ TC = 25 °C - Sustains full-load current in compact heatsink designs |
| Qg | 30 nC - Reduces gate drive power and enables >100 kHz operation with standard drivers |
| EAS | 350 mJ - Withstands single-pulse inductive energy without failure in flyback/PFC snubbers |
| Rthj-pcb | 30 °C/W - Achieves ≤100 °C junction rise over PCB copper area (≥10 cm², 2 oz Cu) |
| tr/tf | 15/14 ns @ RG = 4.7 Ω - Enables clean edge control in ZVS/ZCS resonant circuits |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated heat slug on backside, three terminals - G, D, S - compatible with automated reflow assembly and high-power PCB thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance MOS control input; requires <30 nC charge for full enhancement |
| 2 (D) | Drain | Main high-side switching node; electrically connected to exposed metal tab (heat sink interface) |
| 3 (S) | Source | Power return path and gate reference; low-inductance connection critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II technology | Reduces RDS(on) × Qg by 40% vs. first-gen high-voltage MOSFETs, improving efficiency in 65–300 kHz converters |
| 100% avalanche rated | Guarantees single-pulse energy handling up to 350 mJ without parameter shift or failure |
| Low Ciss/Coss | 940 pF / 100 pF enables faster switching transitions and lower capacitive losses in LLC resonant tanks |
| ECOPACK® compliance | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental requirements |
| Optimized body diode | 340 ns trr, 3.5 µC Qrr minimizes reverse recovery loss in synchronous rectification and freewheeling paths |
Applications
| Server PSU Primary Switch | PFC Boost Switch |
|---|---|
Use Scenario: High-density 80 PLUS Titanium server power supply operating at 100–300 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge or LLC primary stage, handling full DC bus voltage and peak currents up to 11 A. Use Value: Low RDS(on) and Qg reduce conduction + switching losses, enabling >96% efficiency at 50% load while maintaining thermal headroom on 2-layer PCB. | Use Scenario: Active boost PFC front-end in industrial motor drives and telecom rectifiers. IC Role / Device Role / Timing Role: Fast-switching boost switch controlling input current waveform at 65–100 kHz. Use Value: Low Coss and fast tr/tf minimize dead-time losses and improve THD; avalanche rating ensures reliability during line surges. |
| Solar Microinverter DC-DC Stage | Industrial UPS Inverter Leg |
Use Scenario: Isolated DC-DC converter in string-level solar microinverters with 600 V PV input. IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology, blocking up to 500 V with 11 A peak current. Use Value: 150 °C TJ(max) and 30 °C/W Rthj-pcb support sealed enclosure operation without forced air; low Qgd improves ZVS soft-switching margin. | Use Scenario: Half-bridge leg in 3 kVA industrial UPS inverters with battery backup and 400 V DC link. IC Role / Device Role / Timing Role: Low-loss switching element in H-bridge output stage, conducting bidirectional current via integrated body diode. Use Value: Optimized body diode (trr = 340 ns) reduces cross-conduction loss and EMI during commutation; 100% avalanche test ensures surge survivability during grid faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | Same die, TO-220 through-hole package; Rthj-case = 1.25 °C/W vs. 30 °C/W (PCB); no tape-and-reel | Preferred for prototyping, low-volume industrial controls, or where manual soldering is used | Select when mechanical mounting to heatsink is required and automated SMT is unavailable |
| IPP60R190C6 | 600 V, 0.19 Ω, 18 A, CoolMOS™ C6; higher VDSS, lower RDS(on), but Qg = 42 nC | Better suited for 400–600 V systems needing lower conduction loss at cost of higher gate drive demand | Choose for higher-efficiency 600 V designs where gate driver capability permits increased Qg |
Compared with STP12NM50N, STB12NM50N offers superior thermal integration into PCBs and automated manufacturing compatibility; versus IPP60R190C6, it trades higher RDS(on) for lower Qg and proven ruggedness in 500 V applications, simplifying gate drive and layout.
Availability
STB12NM50N is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, solar microinverters, and UPS inverters requiring stable component supply across multi-year production cycles.
Supply support for STB12NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
The MDmesh™ II Power MOSFET product line targets high-efficiency AC-DC and DC-DC conversion in enterprise computing, renewable energy, and industrial automation, emphasizing low RDS(on) × Qg and rugged avalanche performance.
FAQ
What is the maximum continuous drain current for STB12NM50N at 100 °C case temperature?
The maximum continuous drain current is 6.7 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be applied in thermal design calculations alongside Rthj-pcb = 30 °C/W.
Does STB12NM50N have an insulated package for direct heatsink mounting?
No - the D²PAK package has an electrically connected drain tab. The metal backside is internally tied to the drain terminal and must be isolated from the heatsink using a thermally conductive, electrically insulating pad or washer to prevent short circuits.
Can STB12NM50N replace STP12NM50N in existing TO-220 layouts?
No - STB12NM50N uses D²PAK (TO-263) footprint and cannot be drop-in replaced in TO-220 PCBs. Mechanical redesign is required for pad layout, thermal copper area, and solder profile. Electrical parameters match closely, but thermal and mechanical interfaces differ fundamentally.
What is the typical gate threshold voltage range, and how does it affect drive circuit design?
The gate threshold voltage ranges from 2.0 V to 4.0 V (min to max), with typical value ~3.0 V. Drive circuits must ensure VGS ≥ 10 V for full enhancement and low RDS(on); logic-level drivers are insufficient. A dedicated 12–15 V gate driver with sufficient peak current (>1 A) is recommended for reliable switching.
STB12NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 940 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB12NM50N FAQ
1.How can I place an order for STB12NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB12NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB12NM50N reliable?
The price and inventory of STB12NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB12NM50N is usually 5 days.
3.What payment methods are accepted for STB12NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB12NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB12NM50N?
STB12NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB12NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB12NM50N?
For technical support, including STB12NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB12NM50N requirements.
6.How does Aetrix verify that STB12NM50N is sourced from the original manufacturer or authorized distributors?
All STB12NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB12NM50N meets industry standards.
7.What is the process for return or replacement of STB12NM50N?
All STB12NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB12NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB12NM50N part is unused and in its original packaging.
Return procedure for STB12NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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