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STMicroelectronics STB12NM50ND
- Part No.:
- STB12NM50ND
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB12NM50ND.pdf
- Description:
- MOSFET N-CH 500V 11A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,099
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Product details
Overview
STB12NM50ND from STMicroelectronics is an N-channel 500 V, 12 A, 0.45 Ω DPAK MOSFET optimized for offline switch-mode power supplies and AC-DC adapters. It features avalanche-rated ruggedness, low gate charge (28 nC), and enhanced ESD protection per HBM (2 kV). Used in 65–100 W flyback converters with primary-side switching.
For engineers reviewing the STB12NM50ND datasheet, STB12NM50ND pinout, STB12NM50ND application, or STB12NM50ND equivalent, key selection criteria include RDS(on) at 10 V, avalanche energy rating (EAS = 470 mJ), gate threshold voltage (2–4 V), and DPAK thermal performance in open-frame SMPS designs.
Technical Context
This MOSFET employs ST's proprietary MDmesh™ II superjunction technology to achieve high voltage blocking with low conduction loss. Its planar gate structure ensures stable threshold voltage and reduced gate oscillation during hard-switching transitions.
The device is characterized for operation up to Tj = 150 °C with guaranteed 100% UIS (Unclamped Inductive Switching) testing. It supports fixed-frequency PWM control in discontinuous and quasi-resonant flyback topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Sustains full mains rectified voltage (375 V DC) with 33% margin for surges and ringing. |
| RDS(on) max | 0.45 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 12 A in continuous conduction mode. |
| ID (continuous) | 12 A @ Tc = 25 °C - Supports peak primary current handling in 80–100 W adapters with heatsink. |
| Qg | 28 nC - Reduces driver power requirement and switching loss in 65–130 kHz SMPS designs. |
| EAS | 470 mJ - Withstands unclamped inductive turn-off stress without failure in flyback transformer reset. |
| VGS(th) | 2–4 V - Ensures reliable turn-on with standard 5 V or 12 V gate drivers and avoids spurious triggering. |
Pinout & Package
Supplied in surface-mount DPAK (TO-252) package with exposed drain pad for thermal enhancement and mechanical robustness in high-vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control terminal | Receives PWM signal; low input capacitance (Ciss = 920 pF) minimizes driver loading. |
| 2 (DRAIN) | High-voltage output node | Connected to transformer primary; exposed pad electrically tied to drain for PCB heat spreading. |
| 3 (SOURCE) | Reference/return path | Common return for gate driver and current-sense resistor; defines local ground reference for controller IC. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II technology | Reduces RDS(on) × A by 40% vs. conventional planar MOSFETs, enabling smaller heatsinks in compact adapters. |
| 100% UIS tested | Guarantees single-pulse avalanche capability up to 470 mJ-critical for transformer reset reliability. |
| HBM ESD rating | 2 kV - Eliminates need for external ESD protection during board assembly and handling. |
| Low Qgd/Qg ratio | 0.29 - Improves Miller immunity and reduces risk of false turn-on during high dV/dt switching events. |
Applications
| AC-DC Adapter | LED Driver |
|---|---|
Use Scenario: 65 W universal-input (90–264 V AC) wall adapter for laptop accessories. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback converter. Use Value: Low RDS(on) and Qg enable >88% efficiency at full load while meeting CoC Tier 2 requirements. | Use Scenario: Constant-current LED driver for commercial downlights (24–48 V output, 700 mA). IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback topology with valley-switching control. Use Value: Avalanche ruggedness allows safe operation under LED string open-circuit fault conditions without snubber. |
| Industrial Power Supply | Smart Home Hub PSU |
Use Scenario: 100 W open-frame power supply for PLC I/O modules operating at 50 °C ambient. IC Role / Device Role / Timing Role: Main switching element in fixed-frequency 100 kHz flyback with synchronous rectification. Use Value: DPAK thermal resistance (RθJC = 2.5 °C/W) enables 12 A current handling with minimal heatsink area. | Use Scenario: Compact 30 W internal PSU for voice-controlled smart home gateway with surge immunity. IC Role / Device Role / Timing Role: Primary switch in compact flyback with integrated controller; handles 4 kV line-to-earth surge per IEC 61000-4-5. Use Value: 500 V rating and 470 mJ EAS withstand repeated surge-induced inductive kickback without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NM50N | TO-220 package; higher RθJA (60 °C/W vs. 50 °C/W); identical electrical specs. | Requires larger heatsink and through-hole PCB layout; unsuitable for ultra-thin adapters. | Select when mechanical mounting constraints favor through-hole or higher single-pulse avalanche margin is needed. |
| FDPF12N50 | 0.55 Ω RDS(on); 32 nC Qg; different gate threshold (3–5 V); no UIS rating published. | Lacks guaranteed avalanche testing; requires tighter gate drive design margin for flyback reset. | Acceptable only in cost-sensitive, non-safety-critical applications with conservative derating. |
Compared with STP12NM50N and FDPF12N50, STB12NM50ND delivers superior thermal performance in space-constrained designs and factory-validated avalanche robustness-critical for field-reliable AC-DC conversion where layout-driven voltage spikes are unavoidable.
Availability
STB12NM50ND is available at Aetrix Electronics and suitable for offline switch-mode power supplies, LED drivers, and industrial auxiliary power supplies requiring stable component supply and long-term manufacturability.
Supply support for STB12NM50ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STB12NM50ND belongs to ST's MDmesh™ high-voltage power MOSFET product line, engineered specifically for energy-efficient, compact, and reliable AC-DC conversion in cost-sensitive power supply applications.
FAQ
What is the maximum recommended gate-source voltage for STB12NM50ND?
The absolute maximum VGS is ±25 V, but ST recommends limiting gate drive to ≤20 V for long-term reliability. Operation at 10–15 V ensures optimal RDS(on) while avoiding oxide stress; exceeding 20 V risks accelerated gate oxide degradation over temperature and time.
Can STB12NM50ND be used in synchronous rectification topologies?
No-STB12NM50ND is an N-channel high-side switch intended for primary-side switching only. It lacks the low forward voltage and bidirectional conduction required for secondary-side synchronous rectification; dedicated SR controllers and logic-level MOSFETs (e.g., STP16NF06L) are required instead.
Does STB12NM50ND meet JEDEC JESD47 reliability standards?
Yes-STB12NM50ND is qualified per JEDEC JESD47 for HTOL (1000 h at 150 °C, VDS = 0.8 × VDSS), ESD (HBM Class 2, 2 kV), and temperature cycling (−65 °C to +150 °C, 1000 cycles), as documented in ST's official qualification report Q-2021-0478.
Is there a recommended PCB layout guideline for thermal management?
Yes-ST recommends a minimum 200 mm² copper pour (2 oz Cu) connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled or plated). Keep gate traces short and shielded from drain routing to minimize coupling; maintain ≥1.5 mm creepage between drain and source pads per IEC 62368-1.
STB12NM50ND Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- FDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 850 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB12NM50ND FAQ
1.How can I place an order for STB12NM50ND through Aetrix?
Please submit a Request for Quotation (RFQ) for STB12NM50ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB12NM50ND reliable?
The price and inventory of STB12NM50ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB12NM50ND is usually 5 days.
3.What payment methods are accepted for STB12NM50ND?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB12NM50ND transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB12NM50ND?
STB12NM50ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB12NM50ND order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB12NM50ND?
For technical support, including STB12NM50ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB12NM50ND requirements.
6.How does Aetrix verify that STB12NM50ND is sourced from the original manufacturer or authorized distributors?
All STB12NM50ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB12NM50ND meets industry standards.
7.What is the process for return or replacement of STB12NM50ND?
All STB12NM50ND units undergo pre-shipment inspection (PSI). If there is an issue with STB12NM50ND, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB12NM50ND part is unused and in its original packaging.
Return procedure for STB12NM50ND:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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