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STMicroelectronics STB130NS04ZBT4
- Part No.:
- STB130NS04ZBT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB130NS04ZBT4.pdf
- Description:
- MOSFET N-CH 33V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,573
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Product details
Overview
STB130NS04ZBT4 from STMicroelectronics is a 40 V, N-channel clamped power MOSFET in D²PAK (TO-263) package, featuring RDS(on) ≤ 9 mΩ at VGS = 10 V, 80 A continuous drain current at TC = 25°C, and 100% avalanche tested for rugged operation. It integrates Mesh Overlay™ technology and built-in source-drain diode clamping, making it suitable for high-current automotive DC motor drives and industrial switching inverters.
For engineers reviewing the STB130NS04ZBT4 datasheet, STB130NS04ZBT4 pinout, STB130NS04ZBT4 application, or STB130NS04ZBT4 equivalent, key selection criteria include clamped avalanche capability, low gate charge (Qg = 105 nC), thermal resistance (Rthj-case = 0.50 °C/W), and D²PAK tape-and-reel packaging for automated assembly.
Technical Context
This MOSFET employs ST's proprietary Mesh Overlay™ strip layout process to achieve low RDS(on) and enhanced ruggedness. Its fully clamped structure ensures robust operation under unclamped inductive switching, with guaranteed single-pulse avalanche energy EAS = 500 mJ at VDD = 30 V and IAR = 80 A.
The device supports high-speed switching with td(on) = 40 ns, tr = 10 ns, td(off) = 220 ns, and tf = 100 ns under standard test conditions (VDD = 17.5 V, ID = 40 A, RG = 4.7 Ω). Its gate threshold voltage VGS(th) ranges from 2 V to 4 V, enabling reliable turn-on with standard 5 V or 10 V logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V clamped - enables safe operation in 24 V automotive systems with load-dump transients up to 40 V. |
| RDS(on) | ≤ 9 mΩ @ VGS = 10 V - minimizes conduction loss in high-current (>60 A) power stages. |
| ID (cont) | 80 A @ TC = 25°C - supports high-power motor control and DC-DC converter primary switches. |
| Qg | 105 nC - balances switching speed and gate drive power requirements for 10–100 kHz operation. |
| EAS | 500 mJ - provides verified energy-handling margin for inductive load switching without external snubbers. |
| TJ(max) | 175°C - allows extended operation in engine-bay or industrial ambient environments up to 125°C case temperature. |
| Rthj-case | 0.50 °C/W - enables 300 W dissipation with modest heatsinking, critical for compact power modules. |
Pinout & Package
STB130NS04ZBT4 is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad on the underside provides low-inductance, high-current path and thermal conduction to the PCB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control input | Receives gate drive signal; requires <20 nC Qgs to reach threshold, compatible with standard MOSFET drivers. |
| Drain (D) | High-side power node | Connected to load supply rail; electrically tied to large copper pad for thermal and current handling. |
| Source (S) | Power return / reference | Serves as common return path for load current and gate drive reference; forms Kelvin sense point in precision designs. |
Key Features
| Feature | Design Value |
|---|---|
| Fully clamped avalanche structure | Guarantees 500 mJ single-pulse avalanche energy without derating-eliminates need for external clamping diodes in motor H-bridge legs. |
| Mesh Overlay™ process | Delivers 7–9 mΩ RDS(on) with reduced gate-drain capacitance (Crss = 285 pF), improving dv/dt immunity and reducing Miller-induced shoot-through risk. |
| 100% avalanche tested | Every unit undergoes production avalanche stress screening-ensures field reliability in automotive and industrial applications with unpredictable load transients. |
| ECOPACK® RoHS-compliant packaging | Lead-free second-level interconnect with JEDEC JESD97 marking-meets global environmental compliance without solderability compromise. |
| Enhanced thermal performance | Rthj-pcb = 35 °C/W on 1 in² 2 oz Cu FR4-enables high-power density designs without bolt-down heatsinks in space-constrained modules. |
Applications
| Automotive DC Motor Control | Industrial DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-current bidirectional control of 24 V BLDC fans or radiator cooling pumps in engine compartments. IC Role / Device Role / Timing Role: N-channel high-side switch in half-bridge configuration, operating at 20–50 kHz PWM with synchronous rectification. Use Value: Clamped avalanche rating absorbs back-EMF spikes during abrupt current interruption, eliminating external TVS diodes and reducing BOM count by one component. |
Use Scenario: Primary-side switch in isolated 24 V to 48 V step-up DC-DC converters for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch conducting up to 80 A peak current, driven by isolated gate driver with 10 V gate voltage. Use Value: Low RDS(on) and Qg reduce conduction and switching losses simultaneously, achieving >95% efficiency at full load. |
| Off-Highway Vehicle Power Distribution | Electric Power Steering (EPS) H-Bridge Leg |
|
Use Scenario: Solid-state replacement for mechanical relays in 24 V battery-powered construction equipment power distribution units. IC Role / Device Role / Timing Role: Load switch controlling high-inrush solenoids and hydraulic valves, subjected to repeated hot-swap and load-dump events. Use Value: 175°C junction rating and 100% avalanche testing ensure survival under 300 ms 40 V transients-meeting ISO 7637-2 Pulse 5a requirements without derating. |
Use Scenario: Low-side switch in torque-assist H-bridge driving 3-phase EPS motor windings. IC Role / Device Role / Timing Role: Fast-switching N-channel device handling 60 A continuous current with tight dead-time control to prevent shoot-through. Use Value: Low Ciss (2700 pF) and fast tf (100 ns) enable precise PWM edge control, minimizing torque ripple below 100 Hz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel clamped power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP130NS04ZB | Same die, TO-220 through-hole package; Rthj-case = 0.50 °C/W identical, but no tape-and-reel option. | Preferred for prototyping, manual assembly, or lower-volume industrial controls where surface-mount automation is not required. | Select when board-level reworkability or legacy through-hole compatibility outweighs automated placement needs. |
| IRFB4115PBF | 40 V, 110 A, RDS(on) = 4.5 mΩ, but non-clamped; EAS not specified; higher Qg = 140 nC. | Suitable for non-inductive or snubber-protected topologies only; requires external clamping for motor drive use. | Choose only if clamping is handled externally and lower RDS(on) justifies added design complexity and cost. |
Compared with STP130NS04ZB and IRFB4115PBF, STB130NS04ZBT4 uniquely combines D²PAK tape-and-reel manufacturability, guaranteed clamped avalanche performance, and optimized gate charge for automotive-grade reliability without external protection components.
Availability
STB130NS04ZBT4 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC conversion, and off-highway power distribution requiring stable component supply across multi-year production cycles.
Supply support for STB130NS04ZBT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This device belongs to ST's "STripFET™ V" high-voltage power MOSFET product line, engineered specifically for ruggedized 12–48 V automotive and industrial power switching applications demanding high avalanche energy and long-term reliability.
FAQ
Is STB130NS04ZBT4 pin-compatible with other D²PAK N-channel MOSFETs?
No-it shares the standard 3-pin D²PAK footprint, but electrical characteristics such as RDS(on), Qg, and avalanche rating are specific to this part. Direct substitution requires verification of gate drive compatibility, thermal limits, and clamping behavior in the target circuit.
What is the maximum recommended gate drive voltage for STB130NS04ZBT4?
The absolute maximum VGS is ±18 V per datasheet Table 4. For reliable operation, ST recommends VGS = 10 V for full enhancement and minimal RDS(on); 5 V is sufficient for partial turn-on but increases conduction loss significantly above 20 A.
Does STB130NS04ZBT4 require a gate resistor for stability?
Yes-a series gate resistor (typically 4.7 Ω to 22 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current. The datasheet specifies switching times using RG = 4.7 Ω; omitting it risks oscillation, shoot-through, or gate oxide damage during fast transitions.
Can STB130NS04ZBT4 be used in linear (analog) mode operation?
Yes-the datasheet explicitly lists "Linear applications" as an intended use. Its SOA curve (Figure 1) supports limited linear operation up to 80 A and 40 V with appropriate heatsinking, though power dissipation must stay within the safe operating area boundaries at all bias points.
STB130NS04ZBT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MESH OVERLAY™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 33 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 10 V
- Vgs (Max):
- Clamped
- Input Capacitance (Ciss) (Max) @ Vds:
- 2700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB130NS04ZBT4 FAQ
1.How can I place an order for STB130NS04ZBT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB130NS04ZBT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB130NS04ZBT4 reliable?
The price and inventory of STB130NS04ZBT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB130NS04ZBT4 is usually 5 days.
3.What payment methods are accepted for STB130NS04ZBT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB130NS04ZBT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB130NS04ZBT4?
STB130NS04ZBT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB130NS04ZBT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB130NS04ZBT4?
For technical support, including STB130NS04ZBT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB130NS04ZBT4 requirements.
6.How does Aetrix verify that STB130NS04ZBT4 is sourced from the original manufacturer or authorized distributors?
All STB130NS04ZBT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB130NS04ZBT4 meets industry standards.
7.What is the process for return or replacement of STB130NS04ZBT4?
All STB130NS04ZBT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB130NS04ZBT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB130NS04ZBT4 part is unused and in its original packaging.
Return procedure for STB130NS04ZBT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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