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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB13N60M2

Name: STB13N60M2
Brand: STMicroelectronics
SKU: STB13N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB13N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB13N60M2.pdf

Description:: MOSFET N-CH 600V 11A D2PAK

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Product details

Overview

STB13N60M2 from STMicroelectronics is an N-channel 600 V, 350 mΩ typ., 11 A MDmesh™ M2 Power MOSFET in DPAK (TO-252) package, designed for high-efficiency hard-switched and resonant-mode SMPS topologies including PFC and main switch stages. It delivers low R_DS(on), ultra-low gate charge (17 nC), and rugged 100% avalanche-tested operation up to 2.8 A repetitive current.

For engineers reviewing the STB13N60M2 datasheet, STB13N60M2 pinout, STB13N60M2 application, or STB13N60M2 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 125 mJ single-pulse avalanche energy, C_oss,eq of 120 pF at 0–480 V, and Zener-protected gate enabling robust gate drive design in industrial power converters.

Technical Context

This device employs ST's MDmesh M2 vertical superjunction architecture with strip layout optimization, achieving a balance of low conduction loss (R_DS(on) = 350 mΩ typ. @ V_GS = 10 V, I_D = 5.5 A) and fast switching (t_d(off) = 41 ns typ., Q_gd = 9 nC). Its C_oss profile is engineered for soft-recovery behavior in LLC and ZVS circuits.

The integrated source-drain diode features t_rr = 297 ns (T_J = 25 °C) and Q_rr = 2.8 µC, with reverse recovery current limited to 18.5 A - critical for minimizing EMI and body-diode losses in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) max	380 mΩ - ensures ≤0.46 W conduction loss at 11 A continuous drain current
Q_g total	17 nC - enables efficient 100 kHz+ operation with standard 1 A gate drivers
C_oss,eq	120 pF - defines stored output capacitance energy (E_oss ≈ 17 µJ @ 400 V), directly impacting ZVS turn-on loss
I_AR	2.8 A - rated repetitive avalanche current confirms reliability under unclamped inductive switching stress
dv/dt ruggedness	50 V/ns - guarantees immunity to false turn-on during high-slew-rate commutation in half-bridge layouts
T_J max	150 °C - allows operation in sealed enclosures or high-ambient industrial environments without derating below 7 A

Pinout & Package

STB13N60M2 is housed in a surface-mount DPAK (TO-252) package with exposed drain tab for thermal and electrical connection. The package complies with ECOPACK® environmental standards and mounts on FR-4 PCBs with ≥1 in² 2 oz copper for optimal thermal performance (R_thJC = 1.14 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤±25 V drive; low Q_gs (2.5 nC) minimizes Miller-induced oscillation risk
2 (D / TAB)	Drain / Thermal Pad	Main high-voltage node and primary heat path; must be soldered to large copper pour for thermal integrity
3 (S)	Source	Power return and gate reference; low-inductance layout essential to preserve dv/dt immunity

Key Features

Feature	Design Value
MDmesh M2 superjunction structure	Enables 600 V rating with 350 mΩ R_DS(on) - 30 % lower on-resistance than prior-generation 600 V MOSFETs in same package
Zener-protected gate	Integrated gate-source clamp prevents overvoltage damage during layout parasitic coupling or driver fault conditions
100 % avalanche tested	Each unit validated for repetitive avalanche energy (E_AS = 125 mJ), ensuring field reliability in flyback and active-clamp topologies
Optimized C_oss profile	C_oss,eq = 120 pF across 0–480 V enables predictable ZVS transition timing in resonant converters
Low Q_gd/Q_g ratio	Q_gd = 9 nC / Q_g = 17 nC = 53 % - improves controllability during Miller plateau and reduces switching instability

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW continuous-conduction-mode (CCM) PFC boost stages.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 65–100 kHz with ZVS assistance.

Use Value: Low C_oss,eq and 50 V/ns dv/dt ruggedness reduce turn-on loss and prevent spurious turn-on during high di/dt transitions.

Use Scenario: Main switch in isolated LLC resonant DC-DC converters powering 48 V server racks.

IC Role / Device Role / Timing Role: Synchronous rectifier-side high-side switch operating in soft-switching mode with bidirectional current capability.

Use Value: Fast t_r = 10 ns and low Q_g enable precise phase-shift control and minimize dead-time losses.

Motor Drive Inverters

EV Onboard Chargers

Use Scenario: Half-bridge leg in 750 W–1.5 kW BLDC inverter modules for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching element subjected to 300–450 V bus and 10–20 kHz PWM with shoot-through protection.

Use Value: Avalanche-rated I_AR = 2.8 A and robust body diode (V_SD = 1.6 V @ 11 A) support safe freewheeling during PWM dead time.

Use Scenario: Active clamp switch in 6.6 kW bidirectional OBC AC/DC front-end stage.

IC Role / Device Role / Timing Role: Clamp FET managing voltage overshoot during transformer reset in dual-active-bridge topology.

Use Value: 125 mJ E_AS and 15 V/ns diode recovery dv/dt rating ensure reliable clamping under transient overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13N60M2	Same die, TO-220 package - higher R_thJA (60 °C/W vs 50 °C/W) and no exposed drain tab	Suitable for prototyping or low-volume through-hole designs; lacks DPAK's thermal pad for PCB heat spreading	Select when mechanical mounting constraints prohibit surface-mount or when heatsink attachment is preferred over PCB copper area
IPP60R190C7	650 V, 190 mΩ, 17 A - lower R_DS(on) but higher Q_g (34 nC) and no avalanche rating	Better conduction efficiency at high load, but requires stronger gate driver and lacks STB13N60M2's fault tolerance in unclamped inductive loads	Prefer for fixed-frequency hard-switched converters where gate drive strength and thermal headroom allow; avoid in PFC or flyback where avalanche stress occurs

Compared with STP13N60M2, STB13N60M2 offers superior thermal management via DPAK's drain-tab soldering; versus IPP60R190C7, it trades higher R_DS(on) for guaranteed avalanche ruggedness and lower gate drive demand - critical for cost-sensitive, reliability-driven industrial SMPS.

Availability

STB13N60M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STB13N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with broad manufacturing and quality infrastructure.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB13N60M2 supports 7 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9632 Rev 6. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries when mounted on 1 in² 2 oz copper.

Does STB13N60M2 have an integrated body diode, and what are its key recovery parameters?

Yes - it features a monolithic source-drain diode with t_rr = 297 ns and Q_rr = 2.8 µC at T_J = 25 °C, and t_rr = 394 ns at T_J = 150 °C. These values are measured under standardized inductive-load conditions (I_SD = 11 A, di/dt = 100 A/µs, V_DD = 60 V) per Figure 15 in the datasheet.

Can STB13N60M2 replace STD13N60M2 in existing designs?

Yes - STB13N60M2 is the direct successor to STD13N60M2, sharing identical electrical specifications, pinout, package (DPAK), and marking (13N60M2). The change reflects ST's internal part numbering update per DS9632 Rev 6 (June 2023); no design modifications are required.

What is the recommended gate resistor value for 100 kHz hard-switched operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 6, switching times test condition) for V_DD = 300 V, I_D = 5.5 A, delivering t_d(on) = 11 ns and t_f = 9.5 ns. For 100 kHz operation, this value balances switching speed against gate driver stress and EMI; increase to 10–15 Ω if ringing or overshoot is observed.

STB13N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB13N60M2 FAQ

1.How can I place an order for STB13N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB13N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB13N60M2 reliable?

The price and inventory of STB13N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB13N60M2 is usually 5 days.

3.What payment methods are accepted for STB13N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB13N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB13N60M2?

STB13N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB13N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB13N60M2?

For technical support, including STB13N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB13N60M2 requirements.

6.How does Aetrix verify that STB13N60M2 is sourced from the original manufacturer or authorized distributors?

All STB13N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB13N60M2 meets industry standards.

7.What is the process for return or replacement of STB13N60M2?

All STB13N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB13N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB13N60M2 part is unused and in its original packaging.

Return procedure for STB13N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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