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STMicroelectronics STB13N80K5
- Part No.:
- STB13N80K5
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB13N80K5.pdf
- Description:
- MOSFET N-CH 800V 12A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:909
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Product details
Overview
STB13N80K5 from STMicroelectronics is an N-channel 800 V, 370 mΩ typ. (450 mΩ max), 12 A MDmesh K5 Power MOSFET in D²PAK (TO-263) package, designed for high-voltage switching in offline SMPS, PFC stages, and industrial inverters requiring low conduction loss and rugged avalanche performance.
For engineers reviewing the STB13N80K5 datasheet, STB13N80K5 pinout, STB13N80K5 application, or STB13N80K5 equivalent, this device delivers ultra-low gate charge (29 nC), Zener-protected gate, 100% avalanche tested operation, and optimized FoM for high-efficiency 600–800 V systems.
Technical Context
This MOSFET employs ST's proprietary MDmesh K5 vertical structure to achieve a 370 mΩ typical RDS(on) at VGS = 10 V and ID = 6 A, with 29 nC total gate charge enabling fast, low-loss switching in hard-switched topologies. Its 800 V V(BR)DSS rating supports universal-input AC/DC designs up to 400 V RMS line voltage with margin.
The device integrates a robust body diode with 406 ns typical reverse recovery time (TJ = 25 °C) and 5.7 µC Qrr, and features 148 mJ single-pulse avalanche energy (EAS) - validated per unclamped inductive load test - ensuring reliable operation under transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 800 V - Withstands 800 V drain-source breakdown, enabling use in 400 V AC mains-fed converters with safety margin. |
| RDS(on) max | 450 mΩ - Limits conduction loss to ≤ 65 W at 12 A continuous drain current (TC = 25 °C). |
| Qg | 29 nC - Enables efficient gate drive with low-power controllers; reduces switching loss in 65–100 kHz PFC stages. |
| EAS | 148 mJ - Guarantees safe single-pulse avalanche capability without derating, critical for flyback snubberless designs. |
| RthJC | 0.66 °C/W - Supports 190 W power dissipation at TC = 25 °C in D²PAK package with minimal heatsink requirement. |
| dv/dt ruggedness | 50 V/ns - Resists false turn-on during high-slew-rate transients in bridge-leg configurations. |
| VGS(th) | 3–5 V - Ensures clean turn-on with standard 10 V gate drivers while avoiding noise-induced conduction. |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration optimized for high-current PCB thermal relief and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; Zener-protected against ±30 V transients. |
| 2 (D / TAB) | Drain / Heat Sink Pad | Main high-voltage output node; electrically connected to exposed copper tab for low-inductance thermal path to PCB. |
| 3 (S) | Source | Power return reference; ties to low-side switch node; defines gate-source control loop integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | 29 nC total charge enables <100 ns switching transitions with 10 Ω gate resistor, reducing driver loss. |
| Zener-protected gate | Integrated ±30 V gate-body Zener clamps ESD and dv/dt-induced overshoot, eliminating external protection components. |
| 100% avalanche tested | Every unit undergoes unclamped inductive switching test to 148 mJ, ensuring field reliability in overload conditions. |
| Low FoM (RDS(on) × Qg) | 13.05 Ω·nC - Benchmark figure of merit for 800 V MOSFETs, directly improving efficiency in high-frequency PFC. |
| Fast body diode | 406 ns trr and 28 A IRRM support quasi-resonant and LLC secondary-side rectification without external Schottky. |
Applications
| Industrial AC/DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
|
Use Scenario: Primary-side switch in 1–3 kW universal-input offline SMPS with active PFC front-end. IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC resonant half-bridge stages. Use Value: 370 mΩ RDS(on) and 29 nC Qg reduce conduction + switching losses by ≥12% vs. legacy 800 V MOSFETs at 100 kHz. |
Use Scenario: Output rectification and isolation switching in 48 V intermediate bus converters for datacenter PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in dual-active-bridge (DAB) isolated DC/DC stages. Use Value: 148 mJ EAS and 50 V/ns dv/dt ruggedness prevent failure during bus fault transients in 54 V–60 V systems. |
| Motor Drive Inverters | High-Voltage Battery Chargers |
|
Use Scenario: Phase-leg switching in 400–800 V three-phase inverters for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Low-side power switch in IGBT/MOSFET hybrid inverter modules operating at 8–16 kHz. Use Value: 0.66 °C/W RthJC allows direct PCB copper heatsinking, eliminating clip-on heatsinks in compact motor drives. |
Use Scenario: Isolation barrier switch in 750 V DC fast-charging stations with SiC/GaN-assisted topology. IC Role / Device Role / Timing Role: Main switching transistor in phase-shifted full-bridge (PSFB) primary side handling 700 V DC input. Use Value: 800 V V(BR)DSS and 450 mΩ RDS(on) enable >96% peak efficiency at 20 kW while maintaining 2 kV isolation creepage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP13N80K5 | Same die, TO-220 package; RthJC = 3.57 °C/W vs. 0.66 °C/W; no isolated tab. | Requires bolted heatsink; unsuitable for high-density SMT layouts; lower power density. | Select when through-hole assembly, manual prototyping, or discrete heatsink mounting is required. |
| STW13N80K5 | Same die, TO-247 package; RthJC = 0.66 °C/W; higher creepage (≥5 mm) and 2.5 kV isolation rating. | Better suited for medical/industrial isolation-critical designs; larger footprint than D²PAK. | Select when reinforced insulation, higher dv/dt immunity, or legacy TO-247 socket compatibility is mandatory. |
Compared with STP13N80K5 and STW13N80K5, STB13N80K5 offers identical electrical performance in a surface-mount D²PAK package with superior thermal resistance and PCB integration - making it optimal for space-constrained, high-power-density AC/DC and PFC applications.
Availability
STB13N80K5 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STB13N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
STB13N80K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline switching applications including PFC, SMPS, and industrial motor control.
FAQ
What is the maximum continuous drain current for STB13N80K5 at 100 °C case temperature?
The maximum continuous drain current (ID) is 7.6 A at TC = 100 °C, as specified in Table 1 of DS9526 Rev 6. This derating reflects thermal limits of the D²PAK package under sustained high-temperature operation, not device degradation.
Does STB13N80K5 include integrated gate protection?
Yes - STB13N80K5 features an integrated Zener diode between gate and source, rated for ±30 V, providing inherent protection against electrostatic discharge and gate overvoltage transients without requiring external components.
Can STB13N80K5 be used in avalanche mode during normal operation?
No - while 100% tested for single-pulse avalanche energy (EAS = 148 mJ), STB13N80K5 is not rated for repetitive avalanche operation. It must be operated within its SOA curves (Figure 1) to avoid cumulative junction damage.
What is the recommended gate resistor value for hard-switched PFC applications?
A 4.7 Ω gate resistor is validated in the datasheet (Table 6) for VDD = 400 V, ID = 6 A conditions, yielding 16 ns turn-on delay and 16 ns rise time. For 100 kHz PFC, 5–10 Ω balances switching speed, EMI, and gate driver stress.
STB13N80K5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH5™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 450mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB13N80K5 FAQ
1.How can I place an order for STB13N80K5 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB13N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB13N80K5 reliable?
The price and inventory of STB13N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB13N80K5 is usually 5 days.
3.What payment methods are accepted for STB13N80K5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB13N80K5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB13N80K5?
STB13N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB13N80K5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB13N80K5?
For technical support, including STB13N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB13N80K5 requirements.
6.How does Aetrix verify that STB13N80K5 is sourced from the original manufacturer or authorized distributors?
All STB13N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB13N80K5 meets industry standards.
7.What is the process for return or replacement of STB13N80K5?
All STB13N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STB13N80K5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB13N80K5 part is unused and in its original packaging.
Return procedure for STB13N80K5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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