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STMicroelectronics STB13NM50N
- Part No.:
- STB13NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB13NM50N.pdf
- Description:
- MOSFET N-CH 500V 12A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,231
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Product details
Overview
STB13NM50N from STMicroelectronics is an N-channel 500 V, 12 A MDmesh™ II Power MOSFET in D²PAK (TO-263) package, featuring 0.25 Ω typical RDS(on), 30 nC total gate charge, and 100% avalanche tested operation-designed for high-efficiency flyback and resonant SMPS in industrial AC-DC power supplies.
For engineers reviewing the STB13NM50N datasheet, STB13NM50N pinout, STB13NM50N application, or STB13NM50N equivalent, key selection criteria include its 500 V VDSS, low Ciss (960 pF), 150 °C max junction temperature, and D²PAK thermal resistance (Rthj-pcb = 30 °C/W), critical for compact, thermally constrained board-level designs.
Technical Context
This MOSFET employs ST's second-generation MDmesh™ vertical structure with strip layout, enabling ultra-low on-resistance and gate charge while maintaining high voltage capability. Its 500 V rating supports universal-input offline converters up to 265 VAC with margin.
The device integrates a fast-recovery body diode (trr = 300 ns at Tj = 25 °C) and supports unclamped inductive switching with 200 mJ single-pulse avalanche energy-enabling robust operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Supports 265 VAC input with ≥20% safety margin in offline SMPS |
| RDS(on) max | 0.32 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 12 A continuous drain current |
| Qg | 30 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A gate drivers |
| Ciss | 960 pF @ VDS = 50 V - Low input capacitance minimizes switching losses in high-frequency (>100 kHz) converters |
| tr/tf | 15 ns / 10 ns @ ID = 6 A - Fast edge rates support ZVS/ZCS soft-switching implementation |
| EAS | 200 mJ - Withstands repetitive unclamped inductive energy without failure in flyback clamp circuits |
Pinout & Package
D²PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal performance; footprint compatible with IPC-7351B SO-204AA.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control terminal; requires ≤10 V drive for full enhancement; 5 Ω gate resistance limits ringing |
| 2 (D) | Drain | High-voltage output node; electrically connected to exposed copper pad-must be tied to PCB ground plane for thermal and EMI control |
| 3 (S) | Source | Power return path; referenced to gate drive ground; used for current sensing and feedback in primary-side regulation |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II technology | Combines low RDS(on) and low Qg via optimized cell pitch and deep-trench termination-enables >94% efficiency in 100–300 W adapters |
| 100% avalanche tested | Guarantees ruggedness under transient overvoltage conditions without derating-eliminates need for external clamping in cost-sensitive designs |
| Low Coss (50 pF) | Reduces turn-off loss and improves light-load efficiency in QR flyback converters by minimizing capacitive discharge energy |
| ECOPACK® RoHS-compliant | Lead-free second-level interconnect with JEDEC JESD97 marking-meets industrial environmental compliance without solderability trade-offs |
Applications
| Industrial AC-DC Adapters | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 200–300 W universal-input offline flyback converter for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side high-voltage switch; operates at 65–130 kHz with valley-switching control. Use Value: 0.25 Ω RDS(on) and 30 nC Qg reduce conduction + switching losses, enabling 85 °C ambient operation without heatsink. |
Use Scenario: High-density 1U server PSU using active-clamp forward topology. IC Role / Device Role / Timing Role: Main power switch in primary bridge leg; synchronized with 500 kHz PWM controller. Use Value: 500 V rating and 200 mJ EAS tolerate bus transients during hot-swap events without failure. |
| LED Driver Power Stage | Telecom DC-DC Brick Input Stage |
|
Use Scenario: 150 W constant-current LED driver for outdoor street lighting with surge immunity. IC Role / Device Role / Timing Role: PFC boost switch in continuous conduction mode (CCM) at 65 kHz. Use Value: Low Ciss (960 pF) and fast tr/tf minimize switching loss while maintaining THD <5% across line range. |
Use Scenario: 48 V input telecom rectifier module handling 300 W with -48 V backup battery interface. IC Role / Device Role / Timing Role: Isolated forward converter primary switch; rated for 100% duty cycle during battery hold-up. Use Value: Rthj-pcb = 30 °C/W enables direct PCB copper pour cooling-reducing thermal interface layers and BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP13NM50N | Same die, TO-220 package; Rthj-case = 1.25 °C/W vs. D²PAK's 5 °C/W | Requires bolt-down heatsink; unsuitable for high-density SMT-only layouts | Select when mechanical mounting and forced-air cooling are available |
| IPP60R190C6 | 650 V, 0.19 Ω, 34 nC; CoolMOS™ C6 silicon; higher VDSS but 14% higher Qg | Better for 380 V DC-link systems; less optimal for 265 VAC flyback due to over-spec'd voltage | Prefer only if system requires 650 V headroom or legacy CoolMOS™ design reuse |
Compared with STP13NM50N, STB13NM50N offers superior PCB thermal management and automated assembly compatibility; versus IPP60R190C6, it delivers lower gate drive loss and tighter voltage margining for cost-sensitive 500 V applications.
Availability
STB13NM50N is available at Aetrix Electronics and suitable for industrial AC-DC adapters, telecom DC-DC bricks, and LED driver power stages requiring stable component supply and long-term production continuity.
Supply support for STB13NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.
This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line-engineered specifically for high-efficiency, high-power-density offline switching converters where low RDS(on) and low Qg are critical.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STB13NM50N supports 6 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and must be validated against actual PCB copper area and airflow in the target layout.
Does the body diode support synchronous rectification?
No-the integrated body diode has 1.3 V forward voltage and 300 ns reverse recovery time at 25 °C, making it unsuitable for synchronous rectification. It is designed for freewheeling and clamping, not bidirectional conduction.
Can STB13NM50N replace STB13NM50N-1 in the same PCB footprint?
Yes-both share identical D²PAK package dimensions and pinout, but STB13NM50N-1 is marked for I²PAK (TO-262) packaging per Table 1. The STB13NM50N variant uses D²PAK tape-and-reel and is mechanically and electrically identical for SMT placement.
Is this device qualified for automotive applications?
No-STB13NM50N is not AEC-Q101 qualified and lacks automotive-grade screening, temperature range extension, or failure rate data. ST recommends the AEC-Q101-qualified STD13NF50L for automotive powertrain or body electronics use.
STB13NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 960 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 100W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB13NM50N FAQ
1.How can I place an order for STB13NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB13NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB13NM50N reliable?
The price and inventory of STB13NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB13NM50N is usually 5 days.
3.What payment methods are accepted for STB13NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB13NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB13NM50N?
STB13NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB13NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB13NM50N?
For technical support, including STB13NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB13NM50N requirements.
6.How does Aetrix verify that STB13NM50N is sourced from the original manufacturer or authorized distributors?
All STB13NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB13NM50N meets industry standards.
7.What is the process for return or replacement of STB13NM50N?
All STB13NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB13NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB13NM50N part is unused and in its original packaging.
Return procedure for STB13NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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