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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB13NM50N-1

Name: STB13NM50N-1
Brand: STMicroelectronics
SKU: STB13NM50N-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB13NM50N-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB13NM50N-1.pdf

Description:: MOSFET N-CH 500V 12A I2PAK

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Product details

Overview

STB13NM50N-1 from STMicroelectronics is an N-channel 500 V, 12 A, 0.32 Ω R_DS(on) MDmesh™ II Power MOSFET in I²PAK (TO-262) package, designed for high-efficiency switching converters operating up to 150 °C junction temperature. It delivers low gate charge (30 nC), low input capacitance (960 pF), and 100% avalanche-tested ruggedness for hard-switched SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB13NM50N-1 datasheet, STB13NM50N-1 pinout, STB13NM50N-1 application, or STB13NM50N-1 equivalent, key selection criteria include its 550 V V_DSS, 150 °C T_j rating, 5 Ω R_thj-case, 1.3 V V_SD body diode forward voltage, and SOA-limited 48 A pulsed drain current - all critical for reliable high-voltage flyback, resonant LLC, and offline DC-DC designs.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical structure with strip layout, achieving ultra-low R_DS(on) × Q_g figure-of-merit (9.6 Ω·nC) for reduced conduction and switching losses. Its 15 V/ns dv/dt immunity and 300 ns reverse recovery time support stable operation under fast transient conditions in inductive loads.

The device integrates a robust intrinsic body diode rated for 12 A continuous and 48 A pulsed source-drain current, with 200 mJ single-pulse avalanche energy capability. Thermal resistance of 5 °C/W (junction-to-case) enables direct mounting on heatsinks without thermal derating in compact 100 W–500 W power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	550 V - Withstands 10% overvoltage margin above 500 V AC mains-derived DC bus in offline converters.
R_DS(on) max	0.32 Ω @ V_GS = 10 V, T_C = 25 °C - Enables ≤3.8 W conduction loss at 12 A, supporting thermally constrained PCB layouts.
Q_g	30 nC - Reduces gate drive power and allows use of low-cost 1 A peak gate drivers in 100–300 kHz SMPS.
I_D cont	12 A @ T_C = 25 °C - Sustains full-load current in TO-220FP-equivalent thermal envelope with I²PAK footprint.
E_AS	200 mJ - Absorbs unclamped inductive energy during startup/fault without external snubbers in PFC boost stages.
trr	300 ns @ T_j = 25 °C - Minimizes commutation loss and EMI in synchronous rectification and half-bridge topologies.
R_thj-case	5 °C/W - Permits direct heatsink mounting with <10 K rise at 25 W dissipation, eliminating need for thermal interface pads in many designs.

Pinout & Package

STB13NM50N-1 is housed in I²PAK (TO-262) package: 3-terminal surface-mountable outline with isolated tab, compatible with standard TO-220 footprint tooling and reflow soldering. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for output capacitor ground and current-sense resistor; referenced to driver ground.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <5 Ω series gate resistor to damp ringing; sensitive to ESD (±25 V rating).
3 (Drain)	Main high-voltage power terminal	Connected internally to metal tab; must be isolated from heatsink unless using insulating pad; carries full DC bus voltage.

Key Features

Feature	Design Value
MDmesh™ II technology	Combines strip layout with optimized vertical drift region to achieve 0.32 Ω R_DS(on) at 550 V - 35% lower than first-gen equivalents.
100% avalanche tested	Guarantees single-pulse E_AS ≥200 mJ across production lot - eliminates need for external clamping in cost-sensitive flyback designs.
Low C_iss/C_oss	960 pF / 50 pF at 50 V - reduces Miller effect, enabling stable 300 kHz+ operation with minimal gate drive overshoot.
ECOPACK® compliance	Lead-free second-level interconnect per JEDEC JESD97 - meets RoHS/REACH requirements without sacrificing thermal or electrical performance.
Enhanced dv/dt immunity	15 V/ns rated, 30 V/ns typical - prevents false turn-on in high-noise bridge configurations with fast-rising bus voltages.

Applications

Industrial SMPS

Server PSU PFC

Use Scenario: 300–500 W open-frame power supply for PLCs and HMIs with universal AC input (85–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz.

Use Value: 0.32 Ω R_DS(on) and 30 nC Q_g reduce total losses by 1.2 W vs. legacy 500 V MOSFETs, improving efficiency from 93.2% to 94.1% at full load.

Use Scenario: Front-end active PFC in 1U 750 W server power supply with digital control and thermal throttling.

IC Role / Device Role / Timing Role: High-side switch in interleaved dual-boost topology with phase-shifted 120 kHz switching.

Use Value: 5 °C/W R_thj-case enables 12 A continuous current with <75 °C case temperature under forced air, avoiding fan derating.

LED Driver

Motor Drive Inverter

Use Scenario: Constant-current 200 W outdoor LED streetlight driver with surge immunity to 6 kV line-to-ground.

IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback controller with valley-switching and primary-side regulation.

Use Value: 200 mJ E_AS withstands 4 kV surge events without failure, eliminating need for TVS clamping on primary side.

Use Scenario: Low-voltage (<400 V DC bus) 3-phase inverter for HVAC blower motors in commercial rooftop units.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 600 V-class inverter leg, driven by isolated gate driver.

Use Value: 1.3 V V_SD body diode forward drop and 300 ns trr enable efficient freewheeling without external anti-parallel diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP13NM50N	Same die, TO-220 package; R_thj-case = 1.25 °C/W vs. 5 °C/W; 100 W P_TOT vs. 25 W	Better suited for bolted heatsink mounting in space-tolerant industrial enclosures	Select when higher power dissipation (>30 W) and mechanical robustness outweigh SMT assembly benefits
FDPF13N50	ON Semiconductor part; R_DS(on) = 0.34 Ω; Q_g = 32 nC; no avalanche rating specified	Lacks guaranteed E_AS spec - requires external snubber in unclamped inductive circuits	Acceptable only where system-level testing confirms avalanche robustness or topology avoids unclamped operation

Compared with STP13NM50N, STB13NM50N-1 trades 4× higher thermal resistance for SMT manufacturability and smaller footprint; compared with FDPF13N50, it provides documented avalanche ruggedness essential for PFC and flyback reliability without design margin sacrifice.

Availability

STB13NM50N-1 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC, LED drivers, and motor drive inverters requiring stable component supply and long-term obsolescence management.

Supply support for STB13NM50N-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline AC-DC converters and industrial power systems where low R_DS(on) × Q_g and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for STB13NM50N-1 at 100 °C case temperature?

The maximum continuous drain current is 6 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal limitation rather than electrical capability - the device maintains 0.32 Ω R_DS(on) up to 150 °C junction temperature, but power dissipation must be limited to keep T_j ≤ 150 °C under real heatsink conditions.

Can STB13NM50N-1 replace STP13NM50N in an existing TO-220 PCB layout?

No - STB13NM50N-1 uses I²PAK (TO-262) package with different pin spacing (e = 2.40–2.70 mm), pad layout, and thermal pad configuration versus TO-220's e = 2.40–2.70 mm but larger D and E dimensions. Mechanical interference and solder joint reliability would be compromised without PCB redesign.

Does STB13NM50N-1 require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. For 100–200 kHz operation with a 1 A peak gate driver, 4.7 Ω is recommended (per Figure 18 test circuit). Lower values increase switching speed but risk gate ringing; higher values reduce EMI but raise switching losses.

Is STB13NM50N-1 suitable for automotive applications?

No - STB13NM50N-1 is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature cycling validation, or guaranteed parametric stability over -40 °C to 150 °C ambient. ST explicitly states non-automotive use in the datasheet disclaimer; automotive designs require parts marked "Automotive Grade".

STB13NM50N-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 320mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 960 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB13NM50N-1 FAQ

1.How can I place an order for STB13NM50N-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB13NM50N-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB13NM50N-1 reliable?

The price and inventory of STB13NM50N-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB13NM50N-1 is usually 5 days.

3.What payment methods are accepted for STB13NM50N-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB13NM50N-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB13NM50N-1?

STB13NM50N-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB13NM50N-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB13NM50N-1?

For technical support, including STB13NM50N-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB13NM50N-1 requirements.

6.How does Aetrix verify that STB13NM50N-1 is sourced from the original manufacturer or authorized distributors?

All STB13NM50N-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB13NM50N-1 meets industry standards.

7.What is the process for return or replacement of STB13NM50N-1?

All STB13NM50N-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB13NM50N-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB13NM50N-1 part is unused and in its original packaging.

Return procedure for STB13NM50N-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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