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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB140NF55T4

Name: STB140NF55T4
Brand: STMicroelectronics
SKU: STB140NF55T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB140NF55T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB140NF55T4.pdf

Description:: MOSFET N-CH 55V 80A D2PAK

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Product details

Overview

STB140NF55T4 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK package, rated for 55 V V_DS, <0.008 Ω R_DS(on) at V_GS = 10 V, 80 A continuous drain current, and 300 W total dissipation at T_C = 25°C, designed for high-current motor control and switching applications.

For engineers reviewing the STB140NF55T4 datasheet, STB140NF55T4 pinout, STB140NF55T4 application, or STB140NF55T4 equivalent, key selection criteria include avalanche energy rating (1.3 J), gate charge (142 nC), diode recovery performance (90 ns t_rr), thermal resistance (0.5 °C/W j-case), and rugged strip-based process architecture.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based STripFET™ II process, delivering high cell density and low on-resistance while maintaining robust unclamped inductive switching capability. Its design supports fast switching with 150 ns rise time and 45 ns fall time under 4.7 Ω gate drive.

The device integrates a low-V_SD body diode (1.5 V at 80 A) with controlled reverse recovery (275 nC Q_rr, 6.5 A I_RRM) and exhibits stable threshold voltage (2–4 V) and on-resistance over temperature per characterization curves.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12–48 V DC bus systems
R_DS(on)	0.0065 Ω (typ) - enables ≤520 mW conduction loss at 80 A
I_D (cont)	80 A - continuous current handling at T_C = 25°C, limited by package thermal capacity
E_AS	1.3 J - single-pulse avalanche energy tolerance supports inductive load turn-off safety
Q_g	142 nC - gate drive energy requirement informs gate driver sizing and switching loss
t_r/t_f	150/45 ns - fast edge rates enable high-frequency PWM operation up to ~100 kHz
R_thj-case	0.5 °C/W - low thermal resistance allows efficient heatsink coupling in high-power layouts

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB mounting and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to power ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring 10 V drive for full enhancement
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to large copper tab; must be soldered to PCB copper pour for thermal management

Key Features

Feature	Design Value
STripFET™ II process	Enables <0.008 Ω R_DS(on) in D²PAK without compromising avalanche ruggedness
Rugged avalanche capability	1.3 J single-pulse E_AS allows reliable operation under inductive switching stress
Low gate charge	142 nC total charge reduces driver power demand and switching losses
Fast body diode recovery	90 ns t_rr and 275 nC Q_rr minimize commutation losses in synchronous rectification
ECOPACK® compliance	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental standards

Applications

Brushed DC Motor Drive

DC-DC Synchronous Rectifier

Use Scenario: Full-bridge H-bridge controlling 24–48 V brushed motors in industrial actuators and power tools.

IC Role / Device Role / Timing Role: Low-side N-channel switch in half-bridge leg; handles bidirectional current during PWM commutation.

Use Value: 80 A current rating and 1.3 J avalanche energy ensure reliability during motor stall and reversal transients.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V input telecom or server DC-DC converters.

IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diodes; body diode conducts during dead-time, then channel conducts during active period.

Use Value: 0.0065 Ω R_DS(on) cuts conduction loss vs. 0.5 V diode drop, improving efficiency by >2% at 40 A.

High-Current Load Switch

UPS Inverter Stage

Use Scenario: Solid-state replacement for electromechanical relays in battery-powered backup systems and EV auxiliary loads.

IC Role / Device Role / Timing Role: Single-pole, high-current electronic switch enabling soft-start and fault current limiting via gate control.

Use Value: 320 A pulsed drain current (I_DM) supports surge currents during cold cranking or capacitor charging.

Use Scenario: Half-bridge switching stage in 1–3 kVA online UPS inverters converting 350–400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg; handles high RMS current with low thermal impedance.

Use Value: 0.5 °C/W R_thj-case enables direct heatsink mounting and sustained 80 A operation at 100°C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140NF55	TO-220 through-hole package; identical electrical specs but higher R_thj-amb (62.5 °C/W)	Better suited for prototyping or low-volume manual assembly where heatsinking is less constrained	Select when board space permits larger footprint and thermal path relies on clip-on heatsinks rather than PCB copper
IRF1405	55 V, 164 A, 0.0055 Ω R_DS(on); TO-220; higher current rating but no specified E_AS value	Used in high-RMS-current SMPS primary switches where avalanche margin is secondary to conduction loss	Prefer when peak current exceeds 80 A and gate drive can support higher Q_g (191 nC)

Compared with STP140NF55 and IRF1405, STB140NF55T4 offers superior thermal integration via D²PAK's low 0.5 °C/W R_thj-case, verified avalanche ruggedness (1.3 J), and surface-mount compatibility-making it optimal for high-density, high-reliability motor and power conversion designs.

Availability

STB140NF55T4 is available at Aetrix Electronics and suitable for motor control, high-current switching, and UPS inverter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for STB140NF55T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ II product line delivers high-current, low-R_DS(on) MOSFETs optimized for efficiency-critical power conversion and motor drive systems where thermal performance and ruggedness are essential.

FAQ

What is the maximum safe operating temperature for STB140NF55T4 junction?

The absolute maximum operating junction temperature (T_j) is 175°C, with derating beginning at 25°C case temperature. Thermal resistance junction-to-case is 0.5 °C/W, so at 300 W dissipation, junction temperature rises 150°C above case-requiring strict thermal design to keep T_C ≤ 25°C for full-rated operation.

Does STB140NF55T4 have a built-in body diode, and what are its recovery characteristics?

Yes, it integrates a parasitic N-channel body diode with forward voltage of 1.5 V at 80 A and 0 V gate bias. Recovery is characterized at 90 ns reverse recovery time (t_rr), 275 nC reverse recovery charge (Q_rr), and 6.5 A peak reverse recovery current (I_RRM) under 100 A/µs di/dt and 150°C junction conditions.

Can STB140NF55T4 be used in avalanche mode, and what is its rated energy?

Yes-it is fully rated for unclamped inductive switching with a guaranteed single-pulse avalanche energy (E_AS) of 1.3 J at T_j = 25°C, ID = 40 A, and V_DD = 30 V. This rating is validated per Figure 16 test circuit and supports design margin in motor freewheeling and relay snubbing applications.

What is the gate threshold voltage range, and how does it affect drive requirements?

V_GS(th) is specified from 2 V to 4 V at I_D = 250 µA. To ensure full enhancement and minimal R_DS(on), a minimum 10 V gate drive is required-verified by the 0.0065 Ω typical R_DS(on) test condition. Gate drive circuits must deliver ≥10 V with sufficient current to charge 142 nC within nanosecond-scale switching windows.

STB140NF55T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 142 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB140NF55T4 FAQ

1.How can I place an order for STB140NF55T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB140NF55T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB140NF55T4 reliable?

The price and inventory of STB140NF55T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB140NF55T4 is usually 5 days.

3.What payment methods are accepted for STB140NF55T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB140NF55T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB140NF55T4?

STB140NF55T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB140NF55T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB140NF55T4?

For technical support, including STB140NF55T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB140NF55T4 requirements.

6.How does Aetrix verify that STB140NF55T4 is sourced from the original manufacturer or authorized distributors?

All STB140NF55T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB140NF55T4 meets industry standards.

7.What is the process for return or replacement of STB140NF55T4?

All STB140NF55T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB140NF55T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB140NF55T4 part is unused and in its original packaging.

Return procedure for STB140NF55T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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