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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB140NF75T4

Name: STB140NF75T4
Brand: STMicroelectronics
SKU: STB140NF75T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB140NF75T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB140NF75T4.pdf

Description:: MOSFET N-CH 75V 120A D2PAK

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Product details

Overview

STB140NF75T4 from STMicroelectronics is an N-channel 75V Power MOSFET in D2PAK package, featuring R_DS(on) ≤ 0.0075 Ω at V_GS = 10 V, 120 A continuous drain current (T_C = 25°C), 100% avalanche tested, and optimized for high-efficiency DC-DC converters and motor control inverters.

For engineers reviewing the STB140NF75T4 datasheet, STB140NF75T4 pinout, STB140NF75T4 application, or STB140NF75T4 equivalent, key selection criteria include low on-resistance for conduction loss minimization, rugged unclamped inductive switching capability, thermal resistance (R_thj-case = 0.48 °C/W), and tape-and-reel packaging for automated assembly.

Technical Context

This STripFET™ III device uses ST's Single Feature Size™ strip-based process to achieve high cell density and low gate charge (Q_g = 160 nC), enabling fast switching with reduced drive power. Its 75 V V_DSS, 480 A pulsed drain current (I_DM), and 750 mJ single-pulse avalanche energy support robust operation under transient overloads.

The integrated source-drain diode delivers 120 A forward current with 1.5 V forward voltage (V_SD) and 115 ns reverse recovery time (t_rr) at 150°C junction temperature-critical for synchronous rectification and freewheeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus and automotive 60 V systems.
R_DS(on)	≤ 0.0075 Ω @ V_GS = 10 V - Enables <1 W conduction loss at 120 A, reducing heatsink requirements in high-current power stages.
I_D (cont)	120 A @ T_C = 25°C - Continuous current rating limited by package wirebonding; derates to 100 A at 100°C case temperature.
E_AS	750 mJ - Single-pulse avalanche energy at T_j = 25°C, ID = 60 A, V_DD = 30 V; ensures reliability during inductive turn-off transients.
R_thj-case	0.48 °C/W - Junction-to-case thermal resistance enables efficient heat transfer to heatsink; supports >300 W peak power dissipation.
Q_g	160 nC - Total gate charge determines driver strength requirement; enables ~100 kHz switching with standard gate drivers.
t_rr	115 ns - Reverse recovery time of internal body diode at di/dt = 100 A/µs, critical for minimizing switching loss in synchronous buck converters.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical performance; 3-terminal configuration optimized for high-current PCB mounting and automated reflow assembly.

Pin/Terminal	Circuit Role	Design Meaning
1 (GATE)	Control terminal	Receives gate drive signal; requires ≥10 V for full enhancement; input capacitance C_iss = 5000 pF affects drive loop stability.
2 (DRAIN)	High-side power terminal	Connected to exposed copper pad; carries full load current and dissipates heat; electrically tied to package backside.
3 (SOURCE)	Reference/return terminal	Serves as local ground reference for gate drive; low-inductance connection essential to minimize shoot-through risk.

Key Features

Feature	Design Value
STripFET™ III process	Enables ultra-low R_DS(on) and high cell density without compromising avalanche ruggedness or manufacturing yield.
100% avalanche tested	Guarantees minimum 750 mJ single-pulse energy handling per unit-no statistical screening or binning required.
ECOPACK® lead-free packaging	Complies with RoHS Directive 2011/65/EU; second-level interconnect marked per JEDEC JESD97 for traceability.
Low Q_gd/Q_g ratio	Q_gd = 70 nC / Q_g = 160 nC = 44% - Reduces Miller plateau duration, improving immunity to dv/dt-induced false turn-on.

Applications

Motor Drive Inverter

DC-DC Synchronous Buck

Use Scenario: High-current 3-phase inverter stage in 48 V BLDC motor drives for industrial automation and e-mobility subsystems.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology; handles 120 A continuous phase current with forced-air cooling.

Use Value: 0.0065 Ω typical R_DS(on) reduces I²R losses by >30% vs. legacy 10 mΩ MOSFETs, extending thermal margin at 10 kHz PWM.

Use Scenario: Primary switch in 48 V–12 V step-down converter for telecom power shelves and server VRMs.

IC Role / Device Role / Timing Role: High-current high-side switch operating at 200–500 kHz; paired with SiC Schottky diode for body diode bypass.

Use Value: 115 ns t_rr and 450 nC Q_rr limit reverse recovery loss during dead-time, enabling >95% efficiency at 80 A output.

Uninterruptible Power Supply

Industrial Solid-State Relay

Use Scenario: Bidirectional battery interface in online UPS systems supporting 10 ms transfer time and 5 kVA output.

IC Role / Device Role / Timing Role: Main power switch in H-bridge battery charging/discharging path; subjected to repetitive unclamped inductive switching.

Use Value: 750 mJ E_AS and 480 A I_DM withstand repeated 200 µs inductive spikes without degradation, eliminating external snubbers.

Use Scenario: High-reliability AC/DC solid-state relay replacement in PLC output modules and HVAC control panels.

IC Role / Device Role / Timing Role: Isolated power switch replacing electromechanical relays; driven via optocoupled gate driver with 15 V supply.

Use Value: 0.48 °C/W R_thj-case allows direct mounting to aluminum chassis, achieving 100,000+ cycle life without contact wear or arcing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 75 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 0.0055 Ω (lower), but Q_g = 230 nC (higher); TO-220FP package; no avalanche rating specified.	Higher conduction efficiency but slower switching and less rugged under inductive fault conditions.	Prefer when conduction loss dominates and avalanche stress is absent; avoid in unclamped inductive loads.
IXFH120N075	R_DS(on) = 0.0072 Ω (similar), Q_g = 150 nC (slightly lower); TO-247 package; E_AS = 620 mJ (lower).	Marginally faster switching but reduced avalanche margin; larger footprint limits board space efficiency.	Choose for higher-frequency designs (>300 kHz) where gate drive loss matters more than fault energy handling.

Compared with IRFB4115PBF and IXFH120N075, STB140NF75T4 offers superior balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness in compact D2PAK-making it optimal for cost-sensitive, thermally constrained, and fault-prone industrial power stages.

Availability

STB140NF75T4 is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous buck converters, uninterruptible power supplies, and industrial solid-state relays requiring stable component supply and long-term production continuity.

Supply support for STB140NF75T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

The STripFET™ III product line targets high-efficiency power conversion applications, emphasizing low on-resistance, fast switching, and ruggedness in demanding industrial and automotive environments.

FAQ

What is the maximum gate-source voltage rating for STB140NF75T4?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is –10 V to +15 V for reliable turn-off and enhanced noise immunity. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching transitions.

Can STB140NF75T4 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing across paralleled units. Thermal coupling between devices must be matched, and gate drive loop inductance minimized to avoid dynamic imbalance. Derate total current by 15% for 2-unit parallel operation.

Is the body diode suitable for synchronous rectification?

The body diode supports synchronous rectification up to 120 A with 1.5 V forward drop at 120 A and 115 ns t_rr, but its Q_rr = 450 nC introduces measurable recovery loss. For best efficiency above 100 kHz, pairing with an external Schottky diode or using complementary MOSFETs is recommended.

What PCB layout considerations improve thermal performance?

Maximize copper area under the exposed drain pad (≥ 200 mm² per watt), use ≥ 2 oz copper, and implement multiple thermal vias (≥ 8 × 0.3 mm diameter) connecting to inner ground/power planes. Avoid routing signal traces beneath the pad and ensure solder mask opening matches the pad geometry for full thermal contact.

STB140NF75T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 218 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 310W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB140NF75T4 FAQ

1.How can I place an order for STB140NF75T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB140NF75T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB140NF75T4 reliable?

The price and inventory of STB140NF75T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB140NF75T4 is usually 5 days.

3.What payment methods are accepted for STB140NF75T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB140NF75T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB140NF75T4?

STB140NF75T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB140NF75T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB140NF75T4?

For technical support, including STB140NF75T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB140NF75T4 requirements.

6.How does Aetrix verify that STB140NF75T4 is sourced from the original manufacturer or authorized distributors?

All STB140NF75T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB140NF75T4 meets industry standards.

7.What is the process for return or replacement of STB140NF75T4?

All STB140NF75T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB140NF75T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB140NF75T4 part is unused and in its original packaging.

Return procedure for STB140NF75T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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