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STMicroelectronics STB141NF55
- Part No.:
- STB141NF55
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB141NF55.pdf
- Description:
- MOSFET N-CH 55V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,088
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Product details
Overview
STB141NF55 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK package, rated for 55 V drain-source voltage, <0.008 Ω RDS(on) at VGS = 10 V and 40 A, 80 A continuous drain current (TC = 25°C), and 300 W total power dissipation - designed for high-current switching in motor control and automotive power stages.
For engineers reviewing the STB141NF55 datasheet, STB141NF55 pinout, STB141NF55 application, or STB141NF55 equivalent, key selection criteria include avalanche energy rating (1.3 J), gate charge (142 nC), diode recovery performance (trr = 90 ns), thermal resistance (Rthj-case = 0.5 °C/W), and ECOPACK® lead-free compliance.
Technical Context
This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance while maintaining rugged unclamped inductive switching capability. Its optimized gate structure yields low Qg (142 nC) and fast switching (td(on) = 30 ns, tf = 45 ns) under 4.7 Ω gate drive.
The integrated body diode supports synchronous rectification and freewheeling in half-bridge topologies, with specified reverse recovery parameters (Qrr = 275 nC, IRRM = 6.5 A) at Tj = 150°C and di/dt = 100 A/µs - critical for automotive DC-DC and motor phase-leg designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - maximum blocking voltage for 48 V automotive and industrial bus applications |
| RDS(on) | 0.0065 Ω (typ), <0.008 Ω (max) at VGS = 10 V, ID = 40 A - enables <1 W conduction loss at 40 A |
| ID (cont) | 80 A at TC = 25°C - supports high-current motor phases without parallel devices |
| EAS | 1.3 J (single-pulse avalanche) - withstands unclamped inductive turn-off stress in H-bridge fault conditions |
| Qg | 142 nC - determines gate driver power requirement and switching loss trade-off at 100 kHz+ PWM |
| tr/tf | 150 ns / 45 ns - defines minimum dead-time and EMI profile in hard-switched converters |
| Rthj-case | 0.5 °C/W - allows 300 W dissipation with ≤150°C junction rise over 25°C case temperature |
Pinout & Package
D²PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for PCB heat spreading and low-inductance source return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground plane or current-sense resistor; carries full load current |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <142 nC charge; sensitive to ESD and ringing; routed away from power loops |
| Pin 3 (Drain) | Power output (D) | Exposed copper pad (Pin 3 equivalent); ties directly to high-side rail or motor winding; primary thermal path to PCB |
Key Features
| Feature | Design Value |
|---|---|
| StripFET™ II process | Enables 0.0065 Ω RDS(on) in D²PAK without die size penalty - improves power density vs. planar alternatives |
| Rugged avalanche rating | 1.3 J single-pulse energy - eliminates need for external snubbers in brushed motor commutation |
| Low gate charge | 142 nC total charge - reduces gate driver losses and enables use of cost-effective 1-A drivers at 50–100 kHz |
| Fast body diode | trr = 90 ns, Qrr = 275 nC - minimizes reverse recovery loss in synchronous buck and half-bridge configurations |
| ECOPACK® compliance | Lead-free second-level interconnect per JEDEC JESD97 - meets RoHS and automotive ELV requirements |
Applications
| Automotive Power Window Control | Industrial Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Bidirectional 12 V/24 V window lift/lower actuation with stall detection and overcurrent protection. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge; handles 80 A peak inrush and sustained 30 A loads. Use Value: Low RDS(on) limits self-heating during extended hold time; avalanche rating absorbs back-EMF spikes during abrupt stop. |
Use Scenario: Closed-loop speed control of 500 W conveyor belt motors in factory automation systems. IC Role / Device Role / Timing Role: Low-side switch in PWM-driven half-bridge; switched at 20 kHz with 4.7 Ω gate resistor. Use Value: 142 nC Qg and 45 ns fall time enable efficient high-frequency operation; 0.5 °C/W Rthj-case sustains 300 W with minimal heatsink. |
| 48 V Mild Hybrid Starter Generator | EV Onboard Charger Primary Switch |
|
Use Scenario: Crank assist and regenerative braking in 48 V P0/P1 mild hybrid architectures. IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter; subjected to 100 A pulsed currents and 55 V bus transients. Use Value: 320 A pulsed drain current (IDM) and 1.3 J EAS tolerate cranking surges and inductive kickback without failure. |
Use Scenario: Primary-side switching in 3.3 kW AC/DC stage of bidirectional OBC using LLC topology. IC Role / Device Role / Timing Role: Hard-switched MOSFET in asymmetric half-bridge; operated with ZVS assistance but requires robust dv/dt immunity. Use Value: 10 V/ns dv/dt rating ensures reliable operation during high-speed transitions; low Coss (1000 pF) aids soft-switching design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP141NF55 | Same silicon die, TO-220 through-hole package; Rthj-case = 0.5 °C/W identical, but higher Rthj-amb (62.5 vs 35 °C/W in D²PAK) | Preferred for prototyping or low-volume assemblies where manual soldering or socketing is required | Select when mechanical mounting constraints favor through-hole or when legacy board layout lacks D²PAK footprint |
| IRF1405 | 55 V, 169 A, 0.0055 Ω RDS(on), TO-220; higher current rating but 220 nC Qg and no specified EAS | Better conduction efficiency at >60 A, but slower switching and unverified avalanche ruggedness | Choose only if conduction loss dominates system loss budget and avalanche stress is absent or externally clamped |
Compared with STP141NF55, STB141NF55 offers superior thermal performance on PCBs and smaller footprint; versus IRF1405, it trades marginal RDS(on) increase for guaranteed 1.3 J avalanche energy and lower gate drive demand - critical for automotive reliability.
Availability
STB141NF55 is available at Aetrix Electronics and suitable for automotive power window modules, industrial motor drives, 48 V mild hybrid inverters, and onboard charger primary switches requiring stable component supply across multi-year production cycles.
Supply support for STB141NF55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for automotive, industrial, and consumer markets.
STB141NF55 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion where avalanche robustness and thermal performance are non-negotiable.
FAQ
What is the maximum safe operating temperature for STB141NF55?
The STB141NF55 has a maximum operating junction temperature (Tj) of 175°C and a storage temperature range of –55°C to +175°C. When mounted on a 1-inch² FR4 board with 2 oz copper, its Rthj-pcb is 35°C/W; derating begins at 2 W/°C above 25°C case temperature. Thermal design must ensure Tj remains below 175°C under worst-case load and ambient conditions.
Does STB141NF55 support logic-level gate drive?
No - STB141NF55 is not a logic-level MOSFET. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4 V, but it requires VGS = 10 V to achieve rated RDS(on) < 0.008 Ω. Driving with 5 V logic will result in significantly higher on-resistance (>0.02 Ω) and excessive conduction loss; a dedicated 10–15 V gate driver is mandatory for full performance.
Can STB141NF55 replace STB141NF55-1 in a design?
Yes, electrically identical - both share the same die, VDS, RDS(on), ID, and EAS. The only difference is packaging: STB141NF55 uses D²PAK tape-and-reel, while STB141NF55-1 uses I²PAK tube. Mechanical mounting, thermal interface, and PCB footprint differ; direct replacement requires verifying land pattern, solder paste stencil, and reflow profile compatibility with the alternate package.
Is STB141NF55 qualified for automotive applications?
STB141NF55 is not AEC-Q101 qualified. While its datasheet highlights "automotive environment" suitability and includes automotive-grade test conditions (e.g., Tj = 150°C diode recovery), ST does not list it in official AEC-Q101 stress-tested product families. For production automotive use, ST recommends AEC-Q101-qualified equivalents such as STL141N55F7 or STW141N55F7.
STB141NF55 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 142 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB141NF55 FAQ
1.How can I place an order for STB141NF55 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB141NF55 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB141NF55 reliable?
The price and inventory of STB141NF55 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB141NF55 is usually 5 days.
3.What payment methods are accepted for STB141NF55?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB141NF55 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB141NF55?
STB141NF55 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB141NF55 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB141NF55?
For technical support, including STB141NF55 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB141NF55 requirements.
6.How does Aetrix verify that STB141NF55 is sourced from the original manufacturer or authorized distributors?
All STB141NF55 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB141NF55 meets industry standards.
7.What is the process for return or replacement of STB141NF55?
All STB141NF55 units undergo pre-shipment inspection (PSI). If there is an issue with STB141NF55, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB141NF55 part is unused and in its original packaging.
Return procedure for STB141NF55:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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