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STMicroelectronics STB141NF55-1
- Part No.:
- STB141NF55-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB141NF55-1.pdf
- Description:
- MOSFET N-CH 55V 80A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,114
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Product details
Overview
STB141NF55-1 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in I²PAK (TO-262) package, rated for 55 V VDS, <0.008 Ω RDS(on) at VGS = 10 V, and 80 A continuous drain current at TC = 25°C. It features rugged avalanche capability (EAS = 1.3 J), low gate charge (Qg = 142 nC), and optimized for high-current switching in automotive motor control systems.
For engineers reviewing the STB141NF55-1 datasheet, STB141NF55-1 pinout, STB141NF55-1 application, or STB141NF55-1 equivalent, key selection criteria include thermal resistance (Rthj-case = 0.5 °C/W), diode recovery performance (trr = 90 ns, Qrr = 275 nC), and safe operating area robustness under unclamped inductive loads.
Technical Context
This device employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low on-resistance without compromising avalanche ruggedness. Its gate threshold voltage (VGS(th) = 2–4 V) supports standard 10 V gate drive, and its dynamic parameters-including Ciss = 5300 pF and gfs = 100 S-support fast, controlled switching in hard-switched topologies.
The integrated body diode exhibits low forward voltage (VSD = 1.5 V at ISD = 80 A) and tightly specified reverse recovery (IRRM = 6.5 A), making it suitable for freewheeling and synchronous rectification where diode conduction and recovery losses dominate efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 48 V automotive and industrial DC systems. |
| RDS(on) | <0.008 Ω at VGS = 10 V - Enables ≤6.4 W conduction loss at 80 A, critical for thermally constrained motor drive PCBs. |
| ID (cont) | 80 A at TC = 25°C - Continuous current rating limited by package thermal capacity, not silicon; requires heatsink interface design. |
| EAS | 1.3 J - Single-pulse avalanche energy at Tj = 25°C; ensures survivability during load dump or inductive turn-off transients. |
| Qg | 142 nC - Total gate charge determines driver power requirement and switching speed trade-off in 20–100 kHz PWM applications. |
| tr/tf | 150 ns / 45 ns - Rise/fall times at RG = 4.7 Ω define minimum achievable dead-time and EMI profile in half-bridge configurations. |
| Rthj-case | 0.5 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsink; dictates maximum allowable power dissipation per °C rise. |
Pinout & Package
I²PAK (TO-262) package: 3-pin, through-hole, isolated tab (drain-connected), RoHS-compliant ECOPACK® with lead-free second-level interconnect. Mounting requires mechanical pressure and thermal interface material for optimal Rthj-case performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (low-side reference) | Common return path for load current; connects to PCB ground plane or source rail; must handle full 80 A RMS current. |
| 2 (Gate) | Control input | High-impedance MOSFET gate requiring low-inductance routing and gate resistor (4.7 Ω typical) to damp oscillation and control dv/dt. |
| 3 (Drain) | Power output / high-side connection | Internally bonded to metal tab; electrically and thermally coupled to heatsink; must be isolated from other potentials unless chassis-ground referenced. |
Key Features
| Feature | Design Value |
|---|---|
| StripFET™ II process | Enables <0.008 Ω RDS(on) in I²PAK without sacrificing avalanche margin-reducing die size and cost per ampere. |
| Rugged unclamped inductive switching | Validated for 1.3 J single-pulse avalanche energy, eliminating need for external snubbers in brushed DC motor commutation. |
| Low Qgd/Qg ratio | 55/142 ≈ 39% - Improves Miller immunity and reduces risk of shoot-through in bridge configurations with fast dv/dt. |
| Optimized body diode | trr = 90 ns and Qrr = 275 nC enable efficient freewheeling in 48 V battery-powered tools without external Schottky assist. |
| ECOPACK® compliance | Lead-free soldering compatible with JEDEC JESD97 marking; supports automated assembly and environmental compliance without derating. |
Applications
| Brushed DC Motor Drive | Automotive HVAC Blower Control |
|---|---|
|
Use Scenario: High-side or low-side switching of 48 V brushed motors in power seats, window lifts, and sunroof actuators. IC Role / Device Role / Timing Role: Main power switch handling bidirectional 80 A peak currents during stall conditions and PWM commutation. Use Value: Avalanche ruggedness prevents failure during sudden load disconnection; low RDS(on) minimizes heat generation in confined cabin modules. |
Use Scenario: Variable-speed blower fan control in passenger climate systems using 12 V or 48 V architectures. IC Role / Device Role / Timing Role: Low-side switch modulating motor current at 20–50 kHz to reduce acoustic noise and improve airflow resolution. Use Value: Fast tf = 45 ns enables precise duty-cycle control; low Qg reduces gate driver power consumption in always-on modules. |
| Industrial Conveyor Belt Driver | Off-Highway Equipment Starter Solenoid Replacement |
|
Use Scenario: Solid-state replacement for electromechanical contactors driving 3 kW conveyor motors in dusty, vibration-prone environments. IC Role / Device Role / Timing Role: High-current switching element in H-bridge or phase-controlled topology delivering continuous 80 A at ambient up to 105°C. Use Value: Rthj-case = 0.5 °C/W allows direct heatsink mounting without thermal vias; TO-262 footprint simplifies retrofit into legacy contactor PCB layouts. |
Use Scenario: Electronic starter engagement in agricultural tractors and construction machinery using 24 V battery systems. IC Role / Device Role / Timing Role: High-reliability power switch replacing solenoids subject to corrosion and contact wear in high-humidity engine bays. Use Value: EAS = 1.3 J withstands cranking surge transients; VGS(th) = 2–4 V ensures reliable turn-on even with weak battery voltage (≥9 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP141NF55 | Same silicon die, TO-220 package; Rthj-case = 0.5 °C/W but larger footprint and lower creepage distance. | Better suited for prototyping and low-volume industrial controls where manual soldering and board space are less constrained. | Select when mechanical mounting simplicity outweighs thermal density needs; avoid in automotive under-hood locations due to TO-220 thermal pad limitations. |
| STB141NF55 | Identical electrical specs, D²PAK (TO-263) package; same Rthj-case but surface-mount compatible with higher reflow thermal tolerance. | Preferred for automated SMT production and space-constrained automotive ECUs requiring IPC-A-610 Class 3 reliability. | Choose for volume manufacturing with pick-and-place assembly; verify PCB copper area ≥1 in² for Rthj-pcb = 35 °C/W performance. |
Compared with STP141NF55 and STB141NF55, the STB141NF55-1 offers identical electrical performance in a through-hole I²PAK package optimized for mechanical robustness and serviceability-making it ideal for field-replaceable modules and high-vibration environments where SMT reliability concerns exist.
Availability
STB141NF55-1 is available at Aetrix Electronics and suitable for automotive motor control, industrial conveyor drives, and off-highway equipment starter systems requiring stable component supply across extended product lifecycles.
Supply support for STB141NF55-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.
The STB141NF55-1 belongs to ST's StripFET™ II Power MOSFET product line, engineered specifically for high-current, high-reliability switching in harsh-environment automotive and industrial applications where avalanche survival and thermal stability are non-negotiable.
FAQ
What is the maximum safe operating temperature for STB141NF55-1 junction?
The absolute maximum operating junction temperature (Tj) is 175°C, but ST recommends limiting steady-state Tj to ≤150°C for long-term reliability. Derating begins at TC = 25°C with a 2 W/°C slope; at TC = 100°C, maximum continuous power drops to 160 W. Thermal design must account for Rthj-case = 0.5 °C/W and interface resistance to heatsink.
Can STB141NF55-1 replace a mechanical relay in 48 V DC systems?
Yes-its 80 A continuous rating, 320 A pulsed capability, and 1.3 J avalanche energy make it suitable for solid-state relay replacement in 48 V DC systems like telecom power distribution or EV auxiliary loads. However, external flyback protection is still required for inductive loads exceeding its unclamped SOA limits, and gate drive must provide sufficient negative turn-off bias to prevent spurious conduction.
Is STB141NF55-1 qualified for automotive applications per AEC-Q101?
No-STB141NF55-1 is not AEC-Q101 qualified. While it is widely used in automotive subsystems (e.g., HVAC, seat controls), ST classifies it as an industrial-grade device. For AEC-Q101-compliant alternatives, consider ST's STD141N55M6 (AEC-Q101, DPAK) or STW141N55M6 (AEC-Q101, TO-247), which share similar RDS(on) and voltage ratings but undergo additional stress testing.
What gate resistor value is recommended for 40 kHz PWM operation?
A 4.7 Ω gate resistor is specified in the datasheet for test conditions (tr/tf measurement) and provides balanced switching speed and EMI control at 40 kHz. For lower EMI, increase to 10 Ω (slower edges, higher Qg-related losses); for higher efficiency in thermally managed designs, reduce to 2.2 Ω (faster edges, risk of ringing if layout inductance >10 nH). Always verify with oscilloscope at actual gate node.
STB141NF55-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 142 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB141NF55-1 FAQ
1.How can I place an order for STB141NF55-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB141NF55-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB141NF55-1 reliable?
The price and inventory of STB141NF55-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB141NF55-1 is usually 5 days.
3.What payment methods are accepted for STB141NF55-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB141NF55-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB141NF55-1?
STB141NF55-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB141NF55-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB141NF55-1?
For technical support, including STB141NF55-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB141NF55-1 requirements.
6.How does Aetrix verify that STB141NF55-1 is sourced from the original manufacturer or authorized distributors?
All STB141NF55-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB141NF55-1 meets industry standards.
7.What is the process for return or replacement of STB141NF55-1?
All STB141NF55-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB141NF55-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB141NF55-1 part is unused and in its original packaging.
Return procedure for STB141NF55-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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