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STMicroelectronics STB14NK50Z-1
- Part No.:
- STB14NK50Z-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB14NK50Z-1.pdf
- Description:
- MOSFET N-CH 500V 14A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,170
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Product details
Overview
STB14NK50Z-1 from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 500 V drain-source voltage, 340 mΩ typical RDS(on), and 14 A continuous drain current at TC = 25 °C in D²PAK (TO-263) package. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche tested robustness (EAS = 400 mJ), and minimized gate charge (Qg = 69 nC typ.) for hard-switching SMPS and industrial motor drives.
For engineers reviewing the STB14NK50Z-1 datasheet, STB14NK50Z-1 pinout, STB14NK50Z-1 application, or STB14NK50Z-1 equivalent, key selection criteria include its 500 V blocking rating, avalanche energy rating, thermal resistance (RthJC = 0.83 °C/W), source-drain diode recovery performance (trr = 470 ns), and D²PAK footprint compatibility with high-power PCB layouts.
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - to simultaneously reduce on-resistance and enhance ruggedness. Its Zener-protected gate structure enables reliable operation under transient overvoltage conditions without external clamping.
The MOSFET supports unclamped inductive switching with validated repetitive avalanche capability (IAR = 12 A) and exhibits low output capacitance (Coss = 238 pF) and reverse transfer capacitance (Crss = 55 pF), enabling efficient high-frequency hard-switched topologies up to 100 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Enables use in 400 V AC mains-fed SMPS, PFC stages, and industrial DC bus switching. |
| RDS(on) max | 380 mΩ - Limits conduction loss to ≤ 7.6 W at 14 A, supporting thermally constrained designs. |
| ID cont @ TC=25°C | 14 A - Sustains full-load current in compact heatsinked applications like server PSUs and welders. |
| EAS | 400 mJ - Absorbs single-pulse inductive energy without failure, eliminating need for snubbers in flyback/LLC. |
| dv/dt capability | 4.5 V/ns - Withstands rapid voltage transients during commutation, reducing false turn-on risk in noisy environments. |
| Qg | 69 nC typ. - Reduces gate drive power and enables use with low-current drivers (e.g., UC384x family). |
| tr/tf | 16 ns / 12 ns - Supports fast switching with minimal overlap loss in hard-switched converters. |
Pinout & Package
STB14NK50Z-1 is housed in a D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow profiles and provides 0.83 °C/W junction-to-case thermal resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; Zener-protected against ±30 V transients. |
| Pin 2 (D / TAB) | Drain / Thermal Pad | Main high-side power path; electrically and thermally connected to large copper area on PCB. |
| Pin 3 (S) | Source | Power return and reference node; ties to driver ground; carries full load current and diode recovery current. |
Key Features
| Feature | Design Value |
|---|---|
| SuperMESH technology | Reduces RDS(on) by ~25% vs. prior PowerMESH while maintaining SOA integrity. |
| Zener gate protection | Integrates bidirectional 30 V Zener clamp, eliminating need for external gate protection components. |
| 100% avalanche tested | Each unit validated for single-pulse EAS ≥ 400 mJ, ensuring field reliability in inductive loads. |
| Low Crss | 55 pF enables stable high-speed switching with minimal Miller-induced oscillation risk. |
| High dv/dt immunity | 4.5 V/ns rating prevents spurious turn-on during fast VDS transitions in bridge configurations. |
Applications
| Industrial Switched-Mode Power Supplies | AC-DC Front-End Rectification |
|---|---|
|
Use Scenario: Primary-side switch in 500–1000 W telecom and server PSUs operating from 85–264 V AC input. IC Role / Device Role / Timing Role: High-voltage power switch in LLC resonant half-bridge, handling 500 V DC bus and 100 kHz switching. Use Value: Low Qg and Coss minimize driver losses and improve zero-voltage switching margin. |
Use Scenario: Active clamp or synchronous rectifier in high-efficiency PFC boost stages. IC Role / Device Role / Timing Role: Fast-recovery N-channel switch replacing diodes in critical conduction mode (CCM) PFC. Use Value: Integrated source-drain diode with trr = 470 ns and Qrr = 3.1 µC reduces reverse recovery loss vs. discrete diodes. |
| Motor Drive Inverter Stages | Welding Equipment Output Stage |
|
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverters for HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-dv/dt tolerant switch in 400 V DC link, managing inductive kickback during PWM commutation. Use Value: Avalanche-rated design withstands unclamped inductive energy without external snubbers. |
Use Scenario: Primary DC switch in inverter-based arc welding machines delivering 200–400 A output. IC Role / Device Role / Timing Role: Hard-switched 500 V, 14 A power stage controlling duty cycle and current ramp rate. Use Value: 150 W power dissipation rating and 0.83 °C/W RthJC support forced-air cooled thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK50Z | Same die, TO-220 through-hole package; RthJC = 3.6 °C/W (vs. 0.83 °C/W); no tape-and-reel option. | Suitable for prototyping or low-volume manual assembly; lower power density limits high-current use. | Select when board space allows larger footprint and thermal management uses clip-on heatsinks. |
| FDPF14N50 | ON Semiconductor part; 500 V, 380 mΩ, 14 A; higher Qg (95 nC); no integrated Zener gate protection. | Requires external gate Zener; less robust in high-noise industrial environments. | Choose only if supply chain constraints require second-source, and gate drive circuit includes discrete clamping. |
Compared with STP14NK50Z and FDPF14N50, STB14NK50Z-1 offers superior thermal performance via D²PAK, built-in gate protection, and lower gate charge - making it optimal for high-density, high-reliability production SMPS and motor drives.
Availability
STB14NK50Z-1 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, AC-DC front-end rectification, motor drive inverter stages, and welding equipment output stages requiring stable component supply and long-term manufacturability.
Supply support for STB14NK50Z-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
This MOSFET belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 400–800 V DC applications where avalanche ruggedness and thermal performance are critical.
FAQ
Is STB14NK50Z-1 pin-compatible with STB14NK50ZT4?
Yes - STB14NK50Z-1 and STB14NK50ZT4 share identical D²PAK (TO-263) pinout, electrical specifications, and thermal characteristics. The "-1" suffix reflects a minor internal revision documented in DS2637 Rev 4, with no functional or mechanical impact on design-in or replacement.
What is the maximum recommended gate resistor for hard-switching at 100 kHz?
A gate resistor of 4.7 Ω is validated per Figure 17 in DS2637 for 100 kHz operation with VDD = 250 V and ID = 6 A. Using ≥10 Ω increases switching time and conduction loss; <3.3 Ω risks overshoot and ringing due to low gate impedance.
Can STB14NK50Z-1 replace STW14NK50Z in TO-247-based designs?
No - STW14NK50Z uses TO-247 package with different pin spacing, thermal interface, and RthJC (0.83 °C/W vs. 0.83 °C/W but different mounting geometry). Direct replacement requires PCB redesign, heatsink adaptation, and revalidation of thermal and EMI performance.
Does the integrated source-drain diode support synchronous rectification in continuous conduction mode?
Yes - the diode has trr = 470 ns and Qrr = 3.1 µC at 150 °C, enabling use in CCM PFC and LLC secondary-side rectification. However, for >200 kHz operation, discrete Schottky diodes may offer lower recovery loss.
STB14NK50Z-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 92 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB14NK50Z-1 FAQ
1.How can I place an order for STB14NK50Z-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB14NK50Z-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB14NK50Z-1 reliable?
The price and inventory of STB14NK50Z-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB14NK50Z-1 is usually 5 days.
3.What payment methods are accepted for STB14NK50Z-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB14NK50Z-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB14NK50Z-1?
STB14NK50Z-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB14NK50Z-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB14NK50Z-1?
For technical support, including STB14NK50Z-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB14NK50Z-1 requirements.
6.How does Aetrix verify that STB14NK50Z-1 is sourced from the original manufacturer or authorized distributors?
All STB14NK50Z-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB14NK50Z-1 meets industry standards.
7.What is the process for return or replacement of STB14NK50Z-1?
All STB14NK50Z-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB14NK50Z-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB14NK50Z-1 part is unused and in its original packaging.
Return procedure for STB14NK50Z-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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