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STMicroelectronics STB14NK60ZT4
- Part No.:
- STB14NK60ZT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB14NK60ZT4.pdf
- Description:
- MOSFET N-CH 600V 13.5A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:250
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Product details
Overview
STB14NK60ZT4 from STMicroelectronics is a Zener-protected N-channel 600 V, 0.45 Ω typ. (0.5 Ω max.) SuperMESH Power MOSFET in D²PAK (TO-263) package, rated for 13.5 A continuous drain current at TC = 25 °C and 100% avalanche tested. It delivers high dv/dt capability (4.5 V/ns), low gate charge (75 nC), and integrated source-drain diode with 490 ns reverse recovery time - deployed in offline SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB14NK60ZT4 datasheet, STB14NK60ZT4 pinout, STB14NK60ZT4 application, or STB14NK60ZT4 equivalent, key selection criteria include its 600 V breakdown voltage, 0.45 Ω typical RDS(on), 160 W total power dissipation at TC = 25 °C, 12 A repetitive avalanche current, and D²PAK thermal resistance of 0.78 °C/W junction-to-case.
Technical Context
This device implements ST's SuperMESH process - an evolution of PowerMESH - optimizing cell pitch and gate oxide to reduce RDS(on) while maintaining ruggedness. Its Zener-protected gate structure enables ±30 V VGS tolerance and 4 kV HBM ESD rating without external clamping.
The MOSFET features low intrinsic capacitance (Ciss = 2220 pF, Coss = 240 pF) and fast switching (td(on) = 26 ns, tf = 13 ns), supporting high-frequency operation up to 100 kHz in hard-switched topologies. Its 122 pF equivalent output capacitance (Coss,eq) ensures predictable turn-off energy in clamp or snubberless designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports universal-input offline converters (85–265 VAC) with ≥2× safety margin against line transients. |
| RDS(on) max | 0.5 Ω - limits conduction loss to ≤8.6 W at 13.5 A, enabling thermally constrained PCB layouts. |
| ID cont @ TC=25°C | 13.5 A - sustains full-load current in 300–500 W SMPS without forced air cooling. |
| Qg | 75 nC - reduces gate drive power requirement and enables use with low-current drivers (e.g., UC384x family). |
| EAS | 300 mJ - withstands unclamped inductive switching events in relay drivers or solenoid controls without failure. |
| dv/dt rating | 4.5 V/ns - prevents spurious turn-on during high-slew-rate commutation in bridge-leg configurations. |
| RthJC | 0.78 °C/W - allows direct heatsink mounting via D²PAK tab for efficient thermal transfer in compact enclosures. |
Pinout & Package
STB14NK60ZT4 uses the D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 10.4 mm × 15.85 mm × 4.6 mm and is supplied in tape-and-reel format.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path from source to load | Exposed copper tab serves as both high-current drain terminal and primary thermal interface - must be soldered to large copper pour or heatsink. |
| Gate (Pin 1) | Control electrode for channel formation | Low-impedance input requiring <10 Ω series gate resistor to damp ringing; sensitive to ESD (±30 V absolute max). |
| Source (Pin 3) | Reference node for gate drive and current sensing | Provides return path for load current and gate drive loop; layout must minimize inductance to preserve switching fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness under unclamped inductive switching - eliminates need for external snubbers in flyback or forward converters. |
| Zener-protected gate | Integrated gate-source Zener clamps transient overvoltage to ±30 V, preventing oxide rupture during hot-plug or ESD events. |
| SuperMESH technology | Reduces RDS(on) by ~25% vs. prior PowerMESH generation while maintaining >600 V VBR and high dV/dt immunity. |
| Low Qgd/Qgs ratio | 38.6 nC / 13.2 nC ≈ 2.9 - suppresses Miller-induced shoot-through in half-bridge configurations without complex gate timing. |
| Fast body diode | trr = 490 ns, Qrr = 4.7 µC - minimizes reverse recovery loss and EMI in synchronous rectification and LLC resonant topologies. |
Applications
| Industrial Motor Drives | Server PSU Primary Switch |
|---|---|
|
Use Scenario: High-voltage half-bridge in 3-phase inverter driving 1–3 kW AC induction motors. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 600 V DC bus and 12 A peak phase current. Use Value: 4.5 V/ns dv/dt rating prevents false triggering during cross-conduction; 12 A avalanche current tolerates motor stall conditions. |
Use Scenario: Primary-side switch in 80+ Gold-rated 1.5 kW server power supply using active clamp forward topology. IC Role / Device Role / Timing Role: Main power switch operating at 100 kHz with 480 V VDD, delivering 13.5 A average current. Use Value: 75 nC gate charge enables efficient drive with UCC27324; 300 mJ EAS absorbs clamp energy without derating. |
| LED Streetlight Driver | Industrial PLC Output Module |
|
Use Scenario: Constant-current buck-boost LED driver for 150 W streetlight with 300–450 V DC input range. IC Role / Device Role / Timing Role: Main switching FET regulating current through 40–60 V LED string at 3.5 A. Use Value: Low Coss (240 pF) reduces switching loss at 70 kHz; Zener protection guards against lightning-induced gate surges. |
Use Scenario: Solid-state output stage in DIN-rail PLC controlling 24–240 V AC/DC solenoids and contactors. IC Role / Device Role / Timing Role: Load switch interfacing microcontroller GPIO to inductive loads with 12 A surge capability. Use Value: 100% avalanche test ensures reliability across 100,000+ actuation cycles; 1.6 V VSD minimizes dropout in low-voltage DC outputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK60ZFP | Same die, TO-220FP package; RthJC = 3.1 °C/W (vs. 0.78 °C/W); PTOT = 40 W (vs. 160 W) | Requires bolt-down heatsink; unsuitable for high-power density SMT designs | Select when through-hole assembly, lower cost, or legacy footprint compatibility is required. |
| IPP60R190C7XKSA1 | 650 V, 0.19 Ω, CoolMOS C7; lower RDS(on) but higher Qg (95 nC); no integrated Zener | Better efficiency above 50 kHz; requires external gate protection | Prefer for high-frequency resonant converters where conduction loss dominates; verify gate drive robustness. |
Compared with STP14NK60ZFP, STB14NK60ZT4 offers 4× better thermal performance and SMT scalability; versus IPP60R190C7XKSA1, it trades higher RDS(on) for built-in gate protection and proven avalanche ruggedness in hard-switched industrial environments.
Availability
STB14NK60ZT4 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and LED streetlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for STB14NK60ZT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
This device belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-reliability, high-voltage switching in industrial power conversion - emphasizing avalanche ruggedness, gate robustness, and thermal efficiency over raw speed.
FAQ
Is STB14NK60ZT4 suitable for zero-voltage switching (ZVS) topologies?
Yes - its low Coss (240 pF) and controlled Coss,eq (122 pF) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters. However, its body diode trr (490 ns) is longer than dedicated ZVS-optimized FETs, so soft-switching must be designed to ensure diode commutation completes before voltage reversal.
What is the maximum recommended gate resistor value for reliable switching?
A gate resistor of 4.7 Ω is validated in the datasheet for resistive and inductive load tests. For hard-switched applications, values between 2.2 Ω and 10 Ω balance switching loss, EMI, and gate oscillation damping. Exceeding 15 Ω risks incomplete turn-on within PWM dead-time windows, especially at high temperatures.
Does the D²PAK tab require electrical isolation from the heatsink?
No - the drain tab is electrically connected to the Drain terminal. When mounted to a heatsink, the heatsink must be isolated from system ground unless the drain node is already at ground potential (e.g., low-side switch). Use insulating pads or shoulder washers with thermal grease if isolation is needed.
Can STB14NK60ZT4 replace STP14NK60ZFP in existing TO-220FP designs?
Not directly - the D²PAK footprint, thermal path, and solder reflow profile differ significantly. While electrically identical, mechanical redesign is required for PCB layout, heatsinking, and assembly. ST recommends using STP14NK60ZFP for drop-in replacement; STB14NK60ZT4 is intended for new SMT-based high-power designs.
STB14NK60ZT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- SuperMESH™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2220 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB14NK60ZT4 FAQ
1.How can I place an order for STB14NK60ZT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB14NK60ZT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB14NK60ZT4 reliable?
The price and inventory of STB14NK60ZT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB14NK60ZT4 is usually 5 days.
3.What payment methods are accepted for STB14NK60ZT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB14NK60ZT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB14NK60ZT4?
STB14NK60ZT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB14NK60ZT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB14NK60ZT4?
For technical support, including STB14NK60ZT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB14NK60ZT4 requirements.
6.How does Aetrix verify that STB14NK60ZT4 is sourced from the original manufacturer or authorized distributors?
All STB14NK60ZT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB14NK60ZT4 meets industry standards.
7.What is the process for return or replacement of STB14NK60ZT4?
All STB14NK60ZT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB14NK60ZT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB14NK60ZT4 part is unused and in its original packaging.
Return procedure for STB14NK60ZT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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