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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB14NM65N

Name: STB14NM65N
Brand: STMicroelectronics
SKU: STB14NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB14NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB14NM65N.pdf

Description:: MOSFET N-CH 650V 12A D2PAK

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Product details

Overview

STB14NM65N from STMicroelectronics is an N-channel 650 V, 0.33 Ω (typ), 12 A MDmesh™ II Power MOSFET in D²PAK (TO-263) package, designed for high-efficiency switching converters requiring low conduction and switching losses. It features 100% avalanche tested ruggedness, low gate charge (45 nC), and optimized capacitance profile (Ciss = 1300 pF, Crss = 8 pF) for hard-switched PFC and SMPS stages.

For engineers reviewing the STB14NM65N datasheet, STB14NM65N pinout, STB14NM65N application, or STB14NM65N equivalent, key selection criteria include its 650 V V_DSS, 0.33 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, 150 °C max junction temperature, and D²PAK thermal resistance (R_thj-pcb = 30 °C/W), critical for board-level thermal design in industrial power supplies.

Technical Context

This device implements ST's second-generation MDmesh™ vertical superjunction architecture with strip layout, enabling ultra-low R_DS(on) × Q_g figure-of-merit (14.85 Ω·nC). Its 15 V/ns dv/dt capability and 300 mJ single-pulse avalanche energy support robust operation under inductive turn-off stress.

The integrated body diode exhibits fast reverse recovery (trr = 390 ns @ 25 °C, 530 ns @ 150 °C) and low Q_rr (5–7 µC), minimizing commutation loss in totem-pole PFC and synchronous rectification topologies where diode performance directly impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for transients.
R_DS(on) max	0.38 Ω - Ensures <1.8 W conduction loss at 12 A continuous drain current in TO-220FP/D²PAK packages.
Q_g	45 nC - Enables efficient gate drive with standard 1-A peak drivers; reduces driver power dissipation in high-frequency designs.
C_iss	1300 pF - Low input capacitance minimizes Miller effect and improves switching speed stability across operating conditions.
E_AS	300 mJ - Confirmed unclamped inductive switching capability supports reliable operation without external snubbers in flyback or LLC resonant converters.
R_thj-pcb	30 °C/W - Achievable with 1-in² 2-oz copper pad; enables 125 W power dissipation at ΔT = 37.5 °C above ambient on standard PCBs.

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated drain tab (pin 2), thermally enhanced for PCB heat spreading via exposed metal pad. Requires solder mask defined thermal pad and minimum 1-in² copper pour for rated power handling.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires 10 V drive for full enhancement; sensitive to ESD (±25 V absolute max).
2 (D)	Drain	High-voltage output node; electrically connected to exposed metal tab; must be isolated from heatsink unless using insulating pad.
3 (S)	Source	Power return path and gate reference; connects to PCB ground plane; forms common node for gate driver return and current sensing.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness against inductive switching faults without derating; eliminates need for external clamping in cost-sensitive designs.
Low gate charge (Q_g = 45 nC)	Reduces gate driver power loss by >40% vs. legacy 600 V MOSFETs, enabling use of smaller, lower-cost drivers in 100–300 kHz SMPS.
Optimized C_iss/C_rss ratio	Crss/Ciss = 0.6% suppresses Miller-induced shoot-through risk during high dv/dt transitions in bridge configurations.
Fast body diode (trr = 390 ns)	Enables zero-voltage switching (ZVS) in resonant topologies without adding external SiC diodes, lowering BOM count and cost.

Applications

Industrial Switch-Mode Power Supply

Server & Telecom Rectifier

Use Scenario: Primary-side switch in 500–1000 W AC/DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and half-bridge LLC primary; operates at 65–100 kHz with ZVS.

Use Value: 0.33 Ω R_DS(on) and 45 nC Q_g reduce conduction and switching losses simultaneously, achieving >96% system efficiency at full load.

Use Scenario: Hot-swap OR-ing FET and 48 V intermediate bus converter primary switch in redundant telecom systems.

IC Role / Device Role / Timing Role: High-reliability power switch handling 12–15 A continuous current with fast fault response and avalanche tolerance.

Use Value: 300 mJ E_AS and 150 °C T_Jmax ensure survival during hot-plug transients and short-circuit events without derating.

Solar Microinverter DC/AC Stage

EV Onboard Charger (OBC) PFC

Use Scenario: Full-bridge inverter leg in 300–600 W microinverters interfacing PV panels to grid.

IC Role / Device Role / Timing Role: High-frequency (20–50 kHz) switching transistor in H-bridge topology; handles bidirectional current flow during reactive power control.

Use Value: Fast body diode (trr = 390 ns) and low Q_rr minimize dead-time losses and enable soft-switching, improving THD and reducing EMI filter size.

Use Scenario: Boost switch in 3.3–6.6 kW bidirectional OBC with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching device in interleaved PFC stage; operates at 65–135 kHz with high duty-cycle variation.

Use Value: 650 V rating and 0.33 Ω R_DS(on) allow direct use across global AC inputs without voltage-doubling circuits, simplifying design and improving reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NM65N	Same die, TO-220 package; R_thj-case = 1.0 °C/W vs. D²PAK's 4.2 °C/W; higher thermal resistance to heatsink.	Better suited for bolt-down heatsink mounting in open-frame industrial PSUs where airflow is controlled.	Select when mechanical mounting constraints favor through-hole and thermal interface to external heatsink is preferred over PCB conduction.
IPP65R045C7	Infineon CoolMOS™ C7; 650 V, 0.045 Ω, 42 A; lower R_DS(on) but higher Q_g (65 nC); different gate threshold (3.5 V typ).	Targeted at higher-power (>1 kW), lower-current density designs where conduction loss dominates over switching loss.	Choose for higher-current, lower-frequency applications where reduced R_DS(on) outweighs increased gate drive demand and cost premium.

Compared with STP14NM65N, STB14NM65N trades off heatsink interface simplicity for superior PCB thermal integration and automated assembly compatibility; versus IPP65R045C7, it offers lower gate drive burden and tighter V_GS(th) distribution at the cost of higher conduction loss in high-current scenarios.

Availability

STB14NM65N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server/telecom rectifiers, solar microinverters, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for STB14NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching power conversion in 65–300 kHz applications where low R_DS(on) × Q_g is critical to system-level efficiency and thermal performance.

FAQ

What is the maximum continuous drain current for STB14NM65N at 100 °C case temperature?

The maximum continuous drain current is 7.6 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This value is limited by junction temperature (150 °C max) and package thermal resistance (R_thj-case = 4.2 °C/W for D²PAK), not by silicon current density alone.

Does STB14NM65N require a gate resistor for safe operation in hard-switched PFC?

Yes - a gate resistor (typically 4.7–10 Ω) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The datasheet specifies switching times (e.g., t_d(on) = 11 ns, t_f = 20 ns) with R_G = 4.7 Ω, and omitting it risks shoot-through, EMI, and gate driver overstress.

Can STB14NM65N replace STP14NM65N in an existing TO-220 footprint?

No - STB14NM65N uses D²PAK (TO-263), which has different pad layout, thermal pad requirements, and lead pitch than TO-220. Direct replacement requires PCB redesign to accommodate the surface-mount footprint, thermal pad, and solder stencil profile.

Is the body diode of STB14NM65N suitable for synchronous rectification in LLC resonant converters?

It is usable but suboptimal: trr = 390 ns and Q_rr = 5 µC are acceptable for <100 kHz operation, yet significantly higher than dedicated SR MOSFETs or SiC diodes. For best efficiency above 150 kHz, a discrete low-Q_rr Schottky or SiC diode is recommended in parallel.

STB14NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB14NM65N FAQ

1.How can I place an order for STB14NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB14NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB14NM65N reliable?

The price and inventory of STB14NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB14NM65N is usually 5 days.

3.What payment methods are accepted for STB14NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB14NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB14NM65N?

STB14NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB14NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB14NM65N?

For technical support, including STB14NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB14NM65N requirements.

6.How does Aetrix verify that STB14NM65N is sourced from the original manufacturer or authorized distributors?

All STB14NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB14NM65N meets industry standards.

7.What is the process for return or replacement of STB14NM65N?

All STB14NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STB14NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB14NM65N part is unused and in its original packaging.

Return procedure for STB14NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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