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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB150N3LH6

Name: STB150N3LH6
Brand: STMicroelectronics
SKU: STB150N3LH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB150N3LH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB150N3LH6.pdf

Description:: MOSFET N CH 30V 80A D2PAK

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Product details

Overview

STB150N3LH6 from STMicroelectronics is an N-channel 30 V Power MOSFET in D²PAK package, featuring 2.4 mΩ typ. R_DS(on) at V_GS = 10 V, 80 A continuous drain current, and 100% avalanche tested robustness. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the STB150N3LH6 datasheet, STB150N3LH6 pinout, STB150N3LH6 application, or STB150N3LH6 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2.5 V), low thermal resistance (R_thj-case = 1.36 °C/W), and pulsed avalanche capability (E_AS = 525 mJ).

Technical Context

This MOSFET employs ST's 6th-generation STripFET™ VI DeepGATE™ technology with optimized gate structure to minimize conduction loss while maintaining fast switching. Its 30 V V_DS rating and 2.4 mΩ R_DS(on) enable high-current operation in compact 12 V and 24 V systems.

The device supports logic-level drive (V_GS(th) max 2.5 V) and delivers low gate charge (Q_g = 80 nC typ.) for efficient PWM control. Its integrated source-drain diode exhibits t_rr = 35 ns and Q_rr = 26.5 nC, suitable for synchronous rectification in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12–24 V rail applications with margin against transients.
R_DS(on) typ.	2.4 mΩ at V_GS = 10 V - Enables ≤1.92 W conduction loss at 80 A, reducing heatsink requirements.
I_D cont.	80 A at T_C = 25 °C - Sustains high load currents in motor drivers and power supplies without derating.
Q_g	80 nC typ. - Low gate drive energy enables efficient 100–500 kHz switching with standard gate drivers.
E_AS	525 mJ - Withstands unclamped inductive switching events in relay or solenoid drive circuits.
R_thj-case	1.36 °C/W - Allows direct mounting to heatsink for thermal management in high-power density designs.
t_rr	35 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in synchronous topologies.

Pinout & Package

Package: D²PAK (TO-263), surface-mount, single-die, isolated tab (drain-connected). Dimensions per Table 9: D = 8.95–9.35 mm, E = 10–10.40 mm, L = 2.29–2.79 mm.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to exposed copper pad; must be soldered to PCB copper pour for thermal and electrical performance.
Source	Reference node for gate drive and current sensing	Low-inductance connection required for stable switching; used as return path for gate driver supply and shunt resistor.
Gate	Control terminal for channel conduction	Logic-compatible input (V_GS(th) = 1–2.5 V); requires <10 Ω series resistance to damp ringing during fast transitions.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching (E_AS = 525 mJ), eliminating need for external snubbers in relay/solenoid drivers.
Logic-level gate drive	V_GS(th) up to 2.5 V enables direct interfacing with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
Ultra-low R_DS(on)	2.4 mΩ typ. reduces I²R losses by >30% vs. prior-gen 30 V MOSFETs in D²PAK, improving thermal headroom at 80 A.
Optimized body diode	t_rr = 35 ns and Q_rr = 26.5 nC support synchronous rectification in high-frequency buck converters without cross-conduction penalty.

Applications

DC-DC Buck Converter

Automotive Motor Driver

Use Scenario: High-current step-down regulator supplying 12 V/60 A to infotainment ECUs.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 300 kHz with forced PWM mode.

Use Value: 2.4 mΩ R_DS(on) limits conduction loss to 8.6 W at full load, enabling compact heatsink design on double-sided PCB.

Use Scenario: H-bridge leg in 24 V brushed DC window lift actuator.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by automotive MCU GPIO with 5 V logic.

Use Value: Logic-level threshold (2.5 V max) ensures reliable turn-on with 5 V MCU outputs; 100% avalanche rating withstands inductive kickback from motor stall.

Industrial PLC Output Module

Server VRM High-Side Switch

Use Scenario: Solid-state relay replacement in 24 V digital output card driving solenoids and valves.

IC Role / Device Role / Timing Role: Load switch with fast turn-off (<100 ns td(off)) to meet IEC 61000-4-4 surge immunity timing constraints.

Use Value: 525 mJ E_AS absorbs energy from 2 kV/1 A surge test pulses without failure, eliminating need for TVS clamping.

Use Scenario: High-side switch in 12 V → 1.2 V multiphase VRM for AI accelerator cards.

IC Role / Device Role / Timing Role: Primary conduction element in interleaved phase leg, driven by dedicated gate controller.

Use Value: 80 nC Q_g enables efficient 1 MHz switching with minimal gate driver power dissipation and reduced layout complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 4.0 mΩ (min. 3.2 mΩ), higher Q_g = 130 nC, no avalanche rating specified	Lacks guaranteed avalanche testing; requires external protection in inductive loads	Lower cost but demands additional snubber design and thermal margin for same 80 A load.
IXTP150N04T2	R_DS(on) = 3.2 mΩ, V_DS = 40 V, TO-220 package, R_thj-case = 1.5 °C/W	Higher voltage rating adds unnecessary overhead; through-hole mounting increases assembly cost and footprint	Better for legacy through-hole designs but less optimal for high-density SMT layouts requiring D²PAK thermal performance.

Compared with IRF1404ZPBF and IXTP150N04T2, STB150N3LH6 offers superior R_DS(on)/thermal trade-off in surface-mount form factor, plus factory-verified avalanche ruggedness-critical for industrial and automotive switching reliability without added protection components.

Availability

STB150N3LH6 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial PLC output modules requiring stable component supply and long-term production continuity.

Supply support for STB150N3LH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and consumer markets.

This device belongs to ST's STripFET™ VI Power MOSFET product line, engineered specifically for high-current, low-voltage switching applications where conduction loss, thermal performance, and ruggedness are critical system constraints.

FAQ

Is STB150N3LH6 suitable for 3.3 V logic-level gate drive?

Yes. With a gate threshold voltage (V_GS(th)) of 1–2.5 V and guaranteed turn-on at V_GS = 4.5 V, it fully supports direct drive from 3.3 V microcontrollers. However, for lowest R_DS(on), V_GS ≥ 10 V is recommended to achieve 2.4 mΩ typ., especially at elevated temperatures.

What is the maximum continuous current at 100 °C case temperature?

The datasheet specifies I_D = 80 A at both T_C = 25 °C and T_C = 100 °C. This reflects package-limited current handling (not silicon-limited), enabled by the D²PAK's robust wire-bond construction and low R_thj-case of 1.36 °C/W.

Does STB150N3LH6 have a built-in ESD protection diode on the gate?

No. The device does not integrate gate ESD protection. Gate-source leakage (I_GSS) is ±100 nA at ±20 V, confirming absence of internal clamping. External Zener diodes (e.g., 12 V) are recommended between gate and source for board-level ESD robustness.

Can STB150N3LH6 replace STB130N3LH6 in existing designs?

Yes, with verified benefit. STB150N3LH6 has lower R_DS(on) (2.4 mΩ vs. 2.8 mΩ) and identical pinout, package, and voltage rating. Thermal performance improves due to reduced conduction loss, allowing either higher current capability or relaxed heatsinking in drop-in upgrades.

STB150N3LH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB150N3LH6 FAQ

1.How can I place an order for STB150N3LH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB150N3LH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB150N3LH6 reliable?

The price and inventory of STB150N3LH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB150N3LH6 is usually 5 days.

3.What payment methods are accepted for STB150N3LH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB150N3LH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB150N3LH6?

STB150N3LH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB150N3LH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB150N3LH6?

For technical support, including STB150N3LH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB150N3LH6 requirements.

6.How does Aetrix verify that STB150N3LH6 is sourced from the original manufacturer or authorized distributors?

All STB150N3LH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB150N3LH6 meets industry standards.

7.What is the process for return or replacement of STB150N3LH6?

All STB150N3LH6 units undergo pre-shipment inspection (PSI). If there is an issue with STB150N3LH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB150N3LH6 part is unused and in its original packaging.

Return procedure for STB150N3LH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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