STMicroelectronics STB150NF04

Overview

STB150NF04 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, rated for 40 V drain-source voltage, <0.007 Ω R_DS(on) at V_GS = 10 V and 40 A, and 80 A continuous drain current at T_C = 25 °C. It delivers high-current switching in DC-DC converters, motor drives, and power supply OR-ing circuits with rugged avalanche capability and 100% tested unclamped inductive switching performance.

For engineers reviewing the STB150NF04 datasheet, STB150NF04 pinout, STB150NF04 application, or STB150NF04 equivalent, this page provides verified package mapping (D²PAK), confirmed thermal resistance (R_thj-case = 0.5 °C/W), gate charge (Q_g = 118 nC), diode recovery metrics (t_rr = 73 ns), and validated alternatives for high-current 40 V switching designs.

Technical Context

This MOSFET employs ST's STripFET™ II "single feature size" strip-based process, enabling ultra-low on-resistance and high cell density without critical alignment steps. Its design supports fast switching (t_d(on) = 15 ns, t_f = 45 ns) with low gate charge and optimized capacitance profile (C_iss = 3650 pF, C_rss = 400 pF).

The device features a built-in source-drain diode with 80 A continuous and 320 A pulsed capability, 1.3 V forward voltage at 80 A, and controlled reverse recovery (Q_rr = 170 nC, I_RRM = 4.6 A). Thermal performance is defined by junction-to-case resistance of 0.5 °C/W and junction-to-PCB resistance of 35 °C/W on 1 in² FR-4 board.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-terminal configuration with standard footprint per ST mechanical drawing (A = 4.4–4.6 mm, D = 8.95–9.35 mm, E = 10–10.4 mm). Thermal pad soldered to PCB copper enhances heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with STP150NF04, the STB150NF04 offers superior thermal interface via D²PAK thermal pad and automated assembly compatibility; versus IRF1404ZPBF, it trades slight R_DS(on) increase for guaranteed avalanche robustness and lower gate charge-critical for high-reliability industrial switching.

Availability

STB150NF04 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, redundant power OR-ing, and hot-swap circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB150NF04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ series targets high-efficiency power conversion, emphasizing low R_DS(on), fast switching, and ruggedness in compact packages-optimized for space-constrained, thermally demanding applications like server VRMs and EV auxiliary supplies.

FAQ

What is the maximum safe operating temperature for STB150NF04?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 to +175 °C. For reliable long-term operation, ST recommends limiting steady-state T_j to ≤150 °C using thermal design that accounts for R_thj-case = 0.5 °C/W and ambient/heatsink conditions. Derating begins at T_C > 25 °C at 2 W/°C.

Can STB150NF04 replace STP150NF04 in existing designs?

Yes, electrically identical with same V_DS, R_DS(on), I_D, and avalanche rating-but STB150NF04 uses D²PAK surface-mount packaging versus TO-220 through-hole. Layout redesign is required for pad geometry, thermal pad soldering, and reflow profile; mechanical mounting and heatsinking differ significantly.

Is STB150NF04 suitable for synchronous rectification?

Yes-the integrated source-drain diode has characterized t_rr = 73 ns, Q_rr = 170 nC, and V_SD = 1.3 V at 80 A, enabling controlled body-diode conduction during dead-time. However, optimal synchronous rectification requires precise gate timing to avoid cross-conduction; external FET drivers with adaptive dead-time control are recommended.

Does STB150NF04 require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to dampen oscillation and control dV/dt. ST's evaluation data uses R_G = 4.7 Ω for switching time measurements. For 100 kHz operation, 4.7–10 Ω balances switching speed and EMI; for high-noise environments or paralleled devices, 15–22 Ω improves stability at the cost of increased t_on/t_off.