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STMicroelectronics STB150NF55T4
- Part No.:
- STB150NF55T4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB150NF55T4.pdf
- Description:
- MOSFET N-CH 55V 120A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,632
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Product details
Overview
STB150NF55 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 55V VDS, 0.005Ω RDS(on) at VGS = 10V, and 120A continuous drain current at TC = 25°C. It features 100% avalanche tested ruggedness, 850mJ single-pulse avalanche energy, and is optimized for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the STB150NF55 datasheet, STB150NF55 pinout, STB150NF55 application, or STB150NF55 equivalent, key selection criteria include its low on-resistance with thermal resistance junction-to-case of 0.5°C/W, fast switching (td(on) = 35ns), gate charge profile (Qg = 140nC), and suitability for unclamped inductive load handling.
Technical Context
This STripFET™ II device uses ST's "Single Feature Size™" strip-based process to achieve high cell density and low RDS(on). Its internal structure supports robust unclamped inductive switching with EAS = 850mJ and dv/dt capability up to 8V/ns under defined conditions (ISD ≤120A, di/dt ≤200A/µs).
The MOSFET integrates a fast-recovery body diode (trr = 130ns, Qrr = 350nC at Tj = 150°C) and exhibits stable transconductance (gfs = 160S typ.) across operating temperature. Thermal performance is characterized by Rthj-case = 0.5°C/W and Rthj-amb = 50°C/W (D2PAK on PCB).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55V - Maximum drain-source blocking voltage for 12V–48V bus systems |
| RDS(on) | 0.005Ω @ VGS = 10V - Enables <1W conduction loss at 120A, critical for high-current power stages |
| ID (cont) | 120A @ TC = 25°C - Current rating limited by D2PAK wirebonding, not silicon |
| EAS | 850mJ - Avalanche energy rating supports reliable operation under inductive turn-off stress |
| Qg | 140nC - Total gate charge determines driver strength requirement and switching loss trade-off |
| tr/tf | 180ns/80ns - Fast edge rates enable high-frequency PWM (≥100kHz) with controlled EMI |
| Rthj-case | 0.5°C/W - Low thermal resistance enables direct heatsink mounting without thermal interface degradation |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB layout and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control electrode | Receives 10V logic-level gate drive; requires ≥±20V absolute max rating compliance |
| 2 (DRAIN) | High-side power terminal | Internally connected to exposed copper pad; must be soldered to large PCB copper area for thermal management |
| 3 (SOURCE) | Power return/reference node | Serves as local ground reference for gate drive loop; low-inductance routing essential for switching stability |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against inductive switching faults without derating |
| STripFET™ II process | Delivers 20% lower RDS(on) vs prior generation at same die size, improving power density |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 marking requirements |
| Fast body diode | trr = 130ns and Qrr = 350nC reduce commutation losses in synchronous rectification |
| Low gate charge asymmetry | Qgd/Qgs = 2.0 ratio supports predictable Miller plateau timing for snubberless design |
Applications
| Motor Drive Half-Bridge | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: High-current BLDC motor phase leg in industrial automation drives. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter stage, conducting 120A peak during PWM on-time. Use Value: 0.005Ω RDS(on) limits I²R loss to 72W at 120A, enabling compact heatsink design. |
Use Scenario: Secondary-side synchronous rectifier in isolated 48V–12V buck converter for telecom power supplies. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode, driven complementary to primary-side switch. Use Value: Body diode recovery trr = 130ns minimizes reverse recovery loss, improving efficiency by >1.5% at 200kHz. |
| Uninterruptible Power Supply (UPS) Inverter | High-Power LED Driver |
|
Use Scenario: Bidirectional DC-AC inverter stage in online UPS systems with battery backup. IC Role / Device Role / Timing Role: High-current switching element in full-bridge topology handling 120A surge currents. Use Value: 850mJ EAS rating ensures survival during output short-circuit or overload transients without external clamping. |
Use Scenario: Constant-current switch in multi-string 100W+ LED lighting drivers for horticulture fixtures. IC Role / Device Role / Timing Role: Primary current-control FET modulating 100A+ LED string current via PWM dimming. Use Value: Rthj-case = 0.5°C/W allows direct mounting to aluminum heatsink, maintaining Tj < 125°C at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB7546PBF | RDS(on) = 0.0045Ω @ 10V but higher Qg = 165nC; TO-220FP package with Rthj-case = 0.75°C/W | Limited to lower-frequency switching (<50kHz) due to slower tr/tf (220ns/110ns) | Prefer when thermal interface constraints prevent D2PAK mounting, accepting higher gate drive loss. |
| IXFH120N55X3 | RDS(on) = 0.0052Ω @ 10V; enhanced avalanche rating (EAS = 1200mJ); TO-247 package with Rthj-case = 0.45°C/W | Better suited for high-reliability aerospace/military designs requiring extended avalanche margin | Select when system-level fault testing mandates >1000mJ EAS, despite larger footprint and higher cost. |
Compared with IRFB7546PBF and IXFH120N55X3, STB150NF55 offers optimal balance of low RDS(on), fast switching, and D2PAK manufacturability-making it preferred for high-volume industrial motor drives where PCB space and thermal mass are constrained.
Availability
STB150NF55 is available at Aetrix Electronics and suitable for motor control inverters, DC-DC synchronous rectifiers, and uninterruptible power supply (UPS) systems requiring stable component supply and long-term production continuity.
Supply support for STB150NF55 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The STB150NF55 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in industrial motor drives and power conversion systems.
FAQ
What is the maximum safe operating temperature for STB150NF55?
The maximum operating junction temperature (Tj) is 175°C, with storage temperature range from –55°C to +175°C. At TC = 100°C, the continuous drain current derates to 106A. Thermal design must ensure Rthj-case × Pdiss + TC ≤ 175°C under worst-case load and ambient conditions.
Can STB150NF55 be used in avalanche mode repeatedly?
No-while 100% avalanche tested and rated for single-pulse EAS = 850mJ, the datasheet does not specify repetitive avalanche capability. Safe operation requires clamping circuits or snubbers to avoid cumulative junction heating and potential failure in unclamped inductive switching.
Is STB150NF55 compatible with standard D2PAK footprints?
Yes-the STB150NF55 uses the industry-standard D2PAK (TO-263) outline per JEDEC MS-013, with mechanical dimensions matching Figure 14 in the datasheet. Pad layout must accommodate 19.85–20.15mm length and 15.45–15.75mm width, plus 5.45mm lead pitch (e).
Does STB150NF55 require gate resistors for stability?
Yes-a series gate resistor (typically 4.7Ω, as used in datasheet switching tests) is required to dampen ringing caused by gate-drain capacitance (Crss = 350pF) and PCB inductance. Omitting it risks shoot-through in bridge configurations and accelerated gate oxide wear under high dv/dt.
STB150NF55T4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 190 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB150NF55T4 FAQ
1.How can I place an order for STB150NF55T4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB150NF55T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB150NF55T4 reliable?
The price and inventory of STB150NF55T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB150NF55T4 is usually 5 days.
3.What payment methods are accepted for STB150NF55T4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB150NF55T4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB150NF55T4?
STB150NF55T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB150NF55T4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB150NF55T4?
For technical support, including STB150NF55T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB150NF55T4 requirements.
6.How does Aetrix verify that STB150NF55T4 is sourced from the original manufacturer or authorized distributors?
All STB150NF55T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB150NF55T4 meets industry standards.
7.What is the process for return or replacement of STB150NF55T4?
All STB150NF55T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB150NF55T4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB150NF55T4 part is unused and in its original packaging.
Return procedure for STB150NF55T4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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