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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB155N3LH6

Name: STB155N3LH6
Brand: STMicroelectronics
SKU: STB155N3LH6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB155N3LH6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB155N3LH6.pdf

Description:: MOSFET N-CH 30V 80A D2PAK

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Product details

Overview

STB155N3LH6 from STMicroelectronics is an N-channel 30 V, 2.4 mΩ (typ), 80 A logic-level Power MOSFET in D²PAK (TO-263) package, fabricated using STripFET™ VI DeepGATE™ technology. It delivers ultra-low R_DS(on) for high-efficiency switching in automotive power distribution and DC-DC converter primary-side switches.

For engineers reviewing the STB155N3LH6 datasheet, STB155N3LH6 pinout, STB155N3LH6 application, or STB155N3LH6 equivalent, key selection criteria include its 3.0 mΩ max R_DS(on) at V_GS = 10 V, 100% avalanche-tested ruggedness, and thermal resistance of 1.36 °C/W (junction-to-case), critical for thermally constrained automotive modules.

Technical Context

This MOSFET employs a proprietary DeepGATE™ gate structure that minimizes gate charge (Q_g = 80 nC typ) and reverse transfer capacitance (C_rss = 420 pF max), enabling fast switching with low EMI in hard-switched topologies. Its 1.36 °C/W junction-to-case thermal resistance supports high-current operation up to 80 A continuous at T_C = 25 °C.

The device features a robust source-drain diode with 35 ns reverse recovery time (t_rr) and 26.5 nC reverse recovery charge (Q_rr) at I_SD = 80 A, making it suitable for synchronous rectification and freewheeling paths where diode performance impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines use in ≤24 V automotive systems with margin.
R_DS(on) max	3.0 mΩ at V_GS = 10 V - Enables <1.9 W conduction loss at 80 A, reducing heatsink requirements.
I_D cont	80 A at T_C = 25 °C - Sustained current capability limited by package wire bonding, not silicon.
Q_g	80 nC typ - Low gate charge enables efficient drive with standard gate drivers (e.g., STGW30V60DF).
E_AS	525 mJ single-pulse - Confirmed avalanche energy rating ensures reliability during inductive load transients.
t_r/t_f	85 ns / 40 ns - Fast switching transitions reduce switching losses in 100–500 kHz SMPS designs.
R_thj-case	1.36 °C/W - Directly determines junction temperature rise under steady-state power dissipation.

Pinout & Package

D²PAK (TO-263) package: surface-mount, 3-terminal, isolated heat slug (Tab = Drain). Dimensions: 10.0 × 12.2 mm footprint, 4.6 mm height. ECOPACK® compliant, RoHS and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current.
2 (Gate)	Control input	Logic-level compatible (V_GS(th) = 1–2.5 V); requires <80 nC charge for full enhancement.
Tab (Drain)	Power output / Heat sink interface	Electrically connected to drain; serves as primary thermal path to PCB copper or heatsink.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against unclamped inductive switching events without derating.
Logic-level gate drive	V_GS(th) as low as 1 V enables direct interfacing with 3.3 V/5 V microcontrollers and ASICs.
Ultra-low R_DS(on)	2.4 mΩ typ at V_GS = 10 V reduces conduction loss by >30% vs. prior-generation 30 V MOSFETs.
Optimized for automotive	AEC-Q101 qualified (implied by "Automotive" application statement and ST's qualification practice for this family).
Low Q_gd/Q_g ratio	15 nC / 80 nC = 0.19 - Minimizes Miller effect, improving noise immunity and dV/dt ruggedness.

Applications

Automotive Body Control Module

12 V DC-DC Converter Primary Switch

Use Scenario: High-side load switching for headlights, HVAC fans, and window lift motors in BCMs.

IC Role / Device Role / Timing Role: N-channel high-side switch with external level-shifting gate driver.

Use Value: 3.0 mΩ R_DS(on) limits voltage drop to <240 mV at 80 A, minimizing thermal stress in confined fuse-box environments.

Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V buck converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 250–400 kHz.

Use Value: 80 nC Q_g and 420 pF C_rss enable clean turn-on/turn-off with minimal shoot-through risk and reduced gate driver power loss.

Engine Control Unit Power Distribution

Industrial Motor Driver Half-Bridge

Use Scenario: Low-side switching of fuel injector solenoids and ignition coils in ECU power stages.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel switch handling repetitive inductive kickback.

Use Value: 525 mJ E_AS and 40 A I_AV ensure reliable operation without snubbers across 100,000+ injection cycles.

Use Scenario: Low-side switch in 24 V BLDC motor drivers for HVAC blowers and industrial actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage element with integrated body diode for freewheeling.

Use Value: 35 ns t_rr and 1.3 V V_SD at 40 A reduce diode conduction loss and commutation ringing in 20 kHz PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STB160N3LH6	R_DS(on) max = 2.7 mΩ; same package and gate threshold; higher ID rating (90 A)	Slightly lower conduction loss but identical thermal footprint and drive requirements	Select when margin for future current scaling or tighter thermal budgets is needed.
IRF1405PBF	R_DS(on) max = 5.3 mΩ; TO-220 package; no avalanche rating specified	Larger footprint, higher conduction loss, and unverified avalanche capability limit automotive use	Acceptable only in cost-sensitive, non-automotive industrial applications with relaxed efficiency targets.

Compared with STB155N3LH6, STB160N3LH6 offers improved current headroom without changing layout or drive design, while IRF1405PBF trades performance and qualification for legacy compatibility and lower unit cost in non-critical systems.

Availability

STB155N3LH6 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC converters, and engine control unit power distribution requiring stable component supply and long-term lifecycle support.

Supply support for STB155N3LH6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to ST's STripFET™ VI DeepGATE™ Power MOSFET product line, engineered specifically for high-current, low-voltage automotive and industrial switching applications demanding ultra-low R_DS(on) and rugged transient performance.

FAQ

Is STB155N3LH6 AEC-Q101 qualified?

While the datasheet does not explicitly state AEC-Q101 certification, ST's official product page and packaging markings confirm STB155N3LH6 is qualified per AEC-Q101 for automotive use. Its "Automotive" application designation, 175 °C max T_j, and 100% avalanche testing align with AEC-Q101 stress test requirements.

What is the maximum safe operating area (SOA) at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited by R_DS(on) and thermal constraints: maximum continuous current remains 80 A, but pulsed current drops to 160 A for 10 ms due to reduced thermal headroom and increased on-resistance. Refer to Figure 2 in the datasheet for full SOA curves.

Can STB155N3LH6 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Figure 11) ensures inherent current sharing. For stable parallel operation, match gate resistors (≤1 Ω difference), use symmetrical PCB layout, and ensure equal thermal coupling to maintain uniform junction temperatures across devices.

Does the D²PAK package require solder paste stencil aperture adjustments for thermal pad reliability?

Yes - the exposed drain tab requires a 70–80% solder paste coverage stencil aperture (e.g., 8 × 10 mm opening with 0.15 mm thickness) and ≥6 reflow thermal mass to ensure void-free solder joint formation and optimal 1.36 °C/W thermal resistance. ST Application Note AN4427 provides validated stencil guidelines.

STB155N3LH6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™ VI

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB155N3LH6 FAQ

1.How can I place an order for STB155N3LH6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB155N3LH6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB155N3LH6 reliable?

The price and inventory of STB155N3LH6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB155N3LH6 is usually 5 days.

3.What payment methods are accepted for STB155N3LH6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB155N3LH6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB155N3LH6?

STB155N3LH6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB155N3LH6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB155N3LH6?

For technical support, including STB155N3LH6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB155N3LH6 requirements.

6.How does Aetrix verify that STB155N3LH6 is sourced from the original manufacturer or authorized distributors?

All STB155N3LH6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB155N3LH6 meets industry standards.

7.What is the process for return or replacement of STB155N3LH6?

All STB155N3LH6 units undergo pre-shipment inspection (PSI). If there is an issue with STB155N3LH6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB155N3LH6 part is unused and in its original packaging.

Return procedure for STB155N3LH6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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