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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB15N65M5

Name: STB15N65M5
Brand: STMicroelectronics
SKU: STB15N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB15N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB15N65M5.pdf

Description:: MOSFET N-CH 650V 11A D2PAK

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Product details

Overview

STB15N65M5 from STMicroelectronics is an N-channel 650 V, 11 A Power MOSFET in DPAK (TO-252) package, featuring 308 mΩ typical R_DS(on), 22 nC total gate charge, and 100% avalanche-tested ruggedness. It leverages MDmesh M5 vertical process technology for high-efficiency switching in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB15N65M5 datasheet, STB15N65M5 pinout, STB15N65M5 application, or STB15N65M5 equivalent, key selection criteria include its 650 V V_(BR)DSS, low 1.47 °C/W R_thJC, fast 247 ns t_rr, and EAS = 160 mJ single-pulse avalanche energy - all critical for hard-switched 400–520 V DC bus designs.

Technical Context

This MOSFET employs ST's MDmesh M5 silicon architecture, combining deep-trench vertical conduction with optimized charge balancing to achieve ultra-low R_DS(on) × Q_g figure-of-merit (≈6.8 Ω·nC). Its gate threshold voltage (3–5 V) ensures robust noise immunity while enabling direct drive from standard 10 V gate drivers.

The integrated body diode delivers 11 A continuous source-drain current with 1.5 V forward drop at 11 A and 247 ns reverse recovery time at 100 A/µs di/dt - enabling reliable operation in synchronous rectification and freewheeling paths without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands full 400 V AC mains-derived DC bus with 30% margin for surge and ringing.
R_DS(on) max	340 mΩ at V_GS = 10 V, I_D = 5.5 A - Enables ≤3.7 W conduction loss at 11 A, reducing heatsink requirements.
Q_g	22 nC - Low gate charge allows fast turn-on/off with modest 1–5 Ω gate resistor, minimizing switching losses.
E_AS	160 mJ - Rated avalanche energy supports unclamped inductive switching in flyback and LLC resonant converters.
t_rr	247 ns - Fast body diode recovery reduces cross-conduction loss and EMI in bridge-leg configurations.
R_thJC	1.47 °C/W - Enables 85 W power dissipation with ≤130 °C junction rise over case, supporting compact thermal design.
I_D (T_C = 100 °C)	6.9 A - Sustains continuous 6.9 A drain current at 100 °C case temperature, suitable for sealed enclosures.

Pinout & Package

DPAK (TO-252) package with exposed drain tab (Pin 2/TAB) for enhanced thermal conduction and mechanical mounting. Standard 3-pin surface-mount outline per ECOPACK® C3 specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires <100 nA leakage current and 3–5 V V_GS(th) for turn-on.
2 (TAB/D)	Drain (exposed pad)	Main high-voltage power terminal; electrically connected to die backside and thermally coupled to PCB copper pour.
3 (S)	Source	Reference node for gate drive and current sensing; carries full load current and body diode return path.

Key Features

Feature	Design Value
MDmesh M5 silicon process	Enables 308 mΩ R_DS(on) at 650 V rating - 25% lower on-resistance than prior-generation 650 V MOSFETs.
100% unclamped inductive avalanche tested	Guarantees 2.5 A repetitive avalanche current and 160 mJ single-pulse energy - eliminates need for external snubbers in flyback primary switches.
Low C_iss/C_oss ratio (816 pF / 23 pF)	Reduces Miller effect and improves dv/dt immunity - enables stable operation at >10 V/ns without false turn-on.
Optimized body diode t_rr and Q_rr	247 ns t_rr and 2.4 µC Q_rr minimize switching loss and EMI in hard-commutated half-bridges.

Applications

Industrial SMPS

Server PSU Primary Switch

Use Scenario: 1 kW open-frame AC-DC power supply with active clamp flyback topology operating at 100 kHz.

IC Role / Device Role / Timing Role: Main high-side switch handling 400 V DC bus and 11 A peak primary current.

Use Value: 340 mΩ R_DS(on) limits conduction loss to 4.1 W at full load, while 160 mJ E_AS absorbs clamp energy without derating.

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server power supply using LLC resonant converter with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET driven by transformer-coupled gate signal.

Use Value: 247 ns t_rr and low Q_rr prevent shoot-through during zero-voltage switching transitions, improving efficiency above 96%.

PFC Boost Stage

Motor Drive Half-Bridge

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 3 kW industrial UPS system.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with 11 A RMS current.

Use Value: 22 nC Q_g enables clean 30 ns t_d(v) and 8 ns t_r(v), reducing switching loss to <1.2 W at 65 kHz.

Use Scenario: 750 W three-phase inverter for HVAC compressor drive with discrete half-bridge modules.

IC Role / Device Role / Timing Role: Low-side switch in each phase leg, commutating 11 A motor current with regenerative braking.

Use Value: Integrated 1.5 V body diode drop and 44 A pulsed I_DM support high-current freewheeling without external diode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 41 mΩ R_DS(on), 72 nC Q_g, TO-247 package	Higher power density but larger footprint and higher gate drive demand	Select when >15 A continuous current or >200 W conduction loss budget requires lower R_DS(on).
STP15N65M5	650 V, 340 mΩ R_DS(on), 22 nC Q_g, TO-220 package	Same silicon but through-hole mounting and higher R_thJA (62 °C/W vs 50 °C/W)	Select when manual assembly, prototyping, or legacy board compatibility is required over surface-mount density.

Compared with IPW65R041CFD7, STB15N65M5 trades 12× higher R_DS(on) for 3.3× lower Q_g and DPAK thermal integration; compared with STP15N65M5, it delivers identical electrical performance in a smaller, automated-assembly-ready package with 25% lower R_thJA.

Availability

STB15N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, server PSU primary switches, and PFC boost stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB15N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB15N65M5 belongs to the MDmesh™ M5 Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems up to 3 kW.

FAQ

Is STB15N65M5 pin-compatible with STD15N65M5?

Yes - STB15N65M5 and STD15N65M5 share identical DPAK (TO-252) pinout (G-D-S), electrical specifications, and thermal characteristics. The STB variant reflects updated manufacturing process and packaging compliance per DS9045 Rev 3, with no functional or layout changes affecting board-level replacement.

What is the maximum recommended gate resistor for 100 kHz switching?

A 4.7 Ω gate resistor is validated per datasheet Figure 16 test conditions (V_DD = 400 V, I_D = 7 A), delivering 30 ns t_d(v), 8 ns t_r(v), and 11 ns t_f(i). For 100 kHz operation, this value balances switching speed against gate driver stress and EMI; values below 2.2 Ω increase peak gate current beyond 2 A and risk oscillation.

Does STB15N65M5 require a negative gate voltage for reliable turn-off?

No - the device has ±25 V gate-source rating and 3–5 V V_GS(th); 0 V gate drive fully turns off the MOSFET. Negative gate bias is unnecessary and not recommended, as it provides no reliability benefit and increases driver complexity without improving dv/dt immunity beyond what the 2.6 pF C_rss already achieves.

Can STB15N65M5 replace STP15N65M5 in existing TO-220 designs?

No - STB15N65M5 uses DPAK (TO-252) package with G-D-S pinout, while STP15N65M5 uses TO-220 with G-D-S pinout but different lead spacing and thermal pad geometry. Direct replacement requires PCB redesign; however, electrical parameters (R_DS(on), Q_g, V_(BR)DSS) are identical, making it a drop-in functional upgrade for new DPAK-based layouts.

STB15N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 85W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB15N65M5 FAQ

1.How can I place an order for STB15N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB15N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB15N65M5 reliable?

The price and inventory of STB15N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB15N65M5 is usually 5 days.

3.What payment methods are accepted for STB15N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB15N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB15N65M5?

STB15N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB15N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB15N65M5?

For technical support, including STB15N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB15N65M5 requirements.

6.How does Aetrix verify that STB15N65M5 is sourced from the original manufacturer or authorized distributors?

All STB15N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB15N65M5 meets industry standards.

7.What is the process for return or replacement of STB15N65M5?

All STB15N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB15N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB15N65M5 part is unused and in its original packaging.

Return procedure for STB15N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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