STMicroelectronics STB15N80K5

Overview

STB15N80K5 from STMicroelectronics is an N-channel 800 V, 375 mΩ (max) MDmesh K5 Power MOSFET in D²PAK (TO-263) package, rated for 14 A continuous drain current at 25 °C and 100% avalanche tested. It delivers ultra-low gate charge (32 nC) and low figure of merit for high-efficiency switching in offline SMPS and industrial motor drives.

For engineers reviewing the STB15N80K5 datasheet, STB15N80K5 pinout, STB15N80K5 application, or STB15N80K5 equivalent, this device is selected for high-voltage hard-switched topologies requiring robust unclamped inductive switching capability, Zener-protected gate integrity, and thermal performance validated up to 150 °C junction temperature.

Technical Context

This MOSFET employs ST's MDmesh K5 vertical superjunction architecture, enabling 800 V breakdown voltage with significantly reduced R_DS(on) and gate charge versus prior-generation high-voltage devices. Its 1.5 V source-drain forward voltage at 14 A supports efficient synchronous rectification in resonant converters.

The device integrates a Zener-protected gate oxide and is 100% tested for single-pulse avalanche energy (E_AS = 150 mJ at T_J = 25 °C), supporting reliable operation under transient overvoltage conditions in flyback and PFC stages without external clamping.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), thermally enhanced for PCB heat spreading via large copper pour under exposed pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP15N80K5, STB15N80K5 offers 5.5× better thermal resistance for SMT integration and eliminates mounting hardware; versus IPP60R190C7, it provides essential 800 V rating for global mains compatibility but trades 190 mΩ for 375 mΩ conduction resistance.

Availability

STB15N80K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for STB15N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

The MDmesh K5 product line targets high-efficiency, high-voltage power conversion-specifically engineered for 65–300 kHz switching in offline SMPS, PFC, and industrial motor drives where ruggedness and FoM optimization are critical.

FAQ

What is the maximum continuous drain current for STB15N80K5 at 100 °C case temperature?

The maximum continuous drain current is 8.8 A at T_C = 100 °C, as specified in Table 1 of DS9181 Rev 4. This rating reflects thermal limitation-not SOA-so actual usable current depends on PCB copper area, heatsinking, and ambient conditions. Derating curves in Figure 1 confirm safe operation up to 10 A with adequate thermal design.

Does STB15N80K5 include integrated gate protection beyond the Zener diode?

Yes-the device integrates a monolithic Zener diode between gate and source to clamp transient overvoltage to ±30 V, protecting the 50 nm gate oxide. No external gate resistor or TVS is required for basic ESD robustness, though a 10–47 Ω series gate resistor is still recommended for ringing suppression in high-dv/dt layouts.

Can STB15N80K5 replace STW15N80K5 in a TO-247-based design?

No-STB15N80K5 uses D²PAK (TO-263) packaging with drain-connected tab, while STW15N80K5 is TO-247 with isolated tab and different pinout (G-D-S vs. G-S-D). Mechanical fit, thermal interface, and PCB footprint are incompatible. Electrical specs match, but board redesign and layout validation are mandatory for substitution.

What is the typical reverse recovery charge (Q_rr) of the body diode at 150 °C junction temperature?

At T_J = 150 °C, Q_rr is 10 μC (Table 7, second row), measured under ISD = 14 A, di/dt = 100 A/µs, and VDD = 60 V. This value is 22% higher than the 25 °C value (8.2 μC), reflecting increased minority carrier lifetime at elevated temperature-critical for predicting diode loss in CRM PFC designs.