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STMicroelectronics STB15NM60N
- Part No.:
- STB15NM60N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB15NM60N.pdf
- Description:
- MOSFET N-CH 600V 14A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,775
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Product details
Overview
STB15NM60N from STMicroelectronics is an N-channel 600 V, 14 A, 0.270 Ω RDS(on) Power MOSFET in D²PAK (TO-263) package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It delivers low gate charge (37 nC), low input capacitance (1250 pF), and 100% avalanche-tested ruggedness, enabling use in industrial SMPS, PFC stages, and offline DC-DC converters.
For engineers reviewing the STB15NM60N datasheet, STB15NM60N pinout, STB15NM60N application, or STB15NM60N equivalent, key selection criteria include its 600 V VDSS, 0.270 Ω RDS(on) at VGS = 10 V, 37 nC total gate charge, 125 W power dissipation capability, and D²PAK thermal resistance of 1.0 °C/W (j-case).
Technical Context
This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its optimized charge distribution enables high dv/dt immunity (30 V/ns typical) and robust unclamped inductive switching performance up to 6 A repetitive avalanche current.
The integrated body diode exhibits 390 ns reverse recovery time (Tj = 25°C) and 5 µC Qrr, supporting synchronous rectification and ZVS operation in resonant topologies. Gate threshold voltage is tightly specified at 2–4 V, ensuring stable turn-on across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Withstands full mains-referenced DC bus in 400 V AC input systems without derating |
| RDS(on) | 0.270 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 14 A continuous drain current |
| Qg | 37 nC - Reduces gate drive power and allows use with low-current drivers in high-frequency designs |
| Ciss | 1250 pF - Low input capacitance supports fast switching with minimal Miller effect |
| Rth(j–case) | 1.0 °C/W - Enables 125 W power dissipation with modest heatsinking (ΔT = 125°C) |
| EAS | 300 mJ - Sustains single-pulse inductive energy without failure under defined test conditions |
| ID (TC = 100°C) | 9 A - Specifies usable current in thermally constrained environments like enclosed power supplies |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to PCB ground plane. Requires minimum 100 mm² copper pour for rated thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | High-impedance input requiring <37 nC charge for full enhancement; sensitive to ESD |
| 2 (Drain) | Power output node | Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential |
| 3 (Source) | Reference node / return path | Common return for load current and gate drive loop; critical for minimizing switching noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation MDmesh™ structure | Reduces RDS(on) × Qg figure-of-merit by >30% vs. first-gen, improving efficiency in 65–300 kHz converters |
| 100% avalanche tested | Guarantees robustness against transient overvoltage events in hard-switched topologies without external snubbers |
| Low Coss (100 pF) | Minimizes turn-off energy loss and improves light-load efficiency in flyback and LLC converters |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 requirements for green manufacturing |
| dv/dt immunity | Rated 30 V/ns ensures reliable operation in high-noise motor drives and industrial inverters |
Applications
| Industrial SMPS | PFC Boost Stage |
|---|---|
Use Scenario: 500 W open-frame switch-mode power supply for factory automation controllers. IC Role / Device Role / Timing Role: Main switching transistor in forward converter primary side, operating at 100 kHz. Use Value: 0.270 Ω RDS(on) and 37 nC Qg reduce total losses below 3.2 W, enabling natural convection cooling. | Use Scenario: Active boost PFC stage in 1 kW telecom rectifier. IC Role / Device Role / Timing Role: High-voltage switch controlling inductor current in continuous conduction mode (CCM). Use Value: 600 V rating and 14 A ID support 120 V–277 V universal input with >96% efficiency at full load. |
| Offline DC-DC Converter | UPS Inverter Stage |
Use Scenario: 300 W isolated DC-DC module converting 400 V DC bus to 24 V for server rack management. IC Role / Device Role / Timing Role: Primary-side switch in half-bridge topology, driven by isolated gate driver. Use Value: 1.0 °C/W Rth(j–case) allows 125 W dissipation with 120 mm² copper pad, eliminating need for bolted heatsink. | Use Scenario: Output H-bridge in 2 kVA line-interactive UPS with battery backup. IC Role / Device Role / Timing Role: High-side switch handling bidirectional current during transfer switching and inverter operation. Use Value: Avalanche-rated 300 mJ EAS withstands inductive kickback during zero-crossing commutation without clamping diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP15NM60N | Same die, TO-220 package; Rth(j–case) = 4.2 °C/W vs. 1.0 °C/W | Requires larger heatsink; unsuitable for high-power density SMT designs | Select when through-hole assembly, lower cost, or manual prototyping is prioritized |
| IPP60R190C6 | 650 V, 0.190 Ω, 35 nC - CoolMOS™ C6; lower RDS(on) but higher Coss (1450 pF) | Better conduction loss at light loads; higher switching loss above 150 kHz | Select for >150 kHz resonant converters where conduction dominates, not hard-switched SMPS |
Compared with STP15NM60N, STB15NM60N offers 4.2× better thermal resistance for compact SMT layouts; versus IPP60R190C6, it trades 0.08 Ω higher RDS(on) for 15% lower Ciss and proven avalanche ruggedness in legacy industrial designs.
Availability
STB15NM60N is available at Aetrix Electronics and suitable for industrial SMPS, PFC boost stages, offline DC-DC converters, and UPS inverter stages requiring stable component supply and long-term manufacturability.
Supply support for STB15NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.
The MDmesh™ Power MOSFET product line targets high-efficiency, high-reliability switching applications in industrial power conversion, where low RDS(on) × Qg and rugged avalanche performance are critical design requirements.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The STB15NM60N supports 9 A continuous drain current at TC = 100°C, as specified in Table 1 of the datasheet. This reflects thermal derating due to junction-to-case thermal resistance (1.0 °C/W) and maximum junction temperature limit (150°C). Operation above this current requires active cooling or reduced ambient temperature.
Does STB15NM60N have a fully rated body diode for synchronous rectification?
No - while the integrated body diode supports source-drain conduction up to 14 A continuous and 56 A pulsed, its reverse recovery characteristics (390 ns trr, 5 µC Qrr) are not optimized for synchronous rectification. It is intended for freewheeling and clamping, not high-frequency bidirectional conduction.
Can STB15NM60N be used in place of STP15NM60N without board redesign?
No - STB15NM60N uses D²PAK (TO-263) surface-mount packaging, while STP15NM60N uses TO-220 through-hole packaging. The footprint, thermal pad layout, and soldering process differ fundamentally. Direct substitution requires PCB revision and requalification of thermal performance.
Is STB15NM60N suitable for automotive applications?
No - STB15NM60N is not qualified to AEC-Q101 and lacks automotive-grade screening, temperature range extension (−40°C to 175°C), or enhanced reliability testing. ST explicitly states non-automotive use in the datasheet disclaimer; it is intended for industrial and commercial power systems only.
STB15NM60N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 299mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1250 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB15NM60N FAQ
1.How can I place an order for STB15NM60N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB15NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB15NM60N reliable?
The price and inventory of STB15NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB15NM60N is usually 5 days.
3.What payment methods are accepted for STB15NM60N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB15NM60N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB15NM60N?
STB15NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB15NM60N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB15NM60N?
For technical support, including STB15NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB15NM60N requirements.
6.How does Aetrix verify that STB15NM60N is sourced from the original manufacturer or authorized distributors?
All STB15NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB15NM60N meets industry standards.
7.What is the process for return or replacement of STB15NM60N?
All STB15NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB15NM60N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB15NM60N part is unused and in its original packaging.
Return procedure for STB15NM60N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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