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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB15NM60ND

Name: STB15NM60ND
Brand: STMicroelectronics
SKU: STB15NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB15NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB15NM60ND.pdf

Description:: MOSFET N-CH 600V 14A D2PAK

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Product details

Overview

STB15NM60ND from STMicroelectronics is a 600 V, 15 A N-channel SuperMESH™ III power MOSFET in TO-220FP package, featuring 0.3 Ω R_DS(on) max at V_GS = 10 V, 45 nC total gate charge, and 100% avalanche-rated ruggedness. It serves as a high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the STB15NM60ND datasheet, STB15NM60ND pinout, STB15NM60ND application, or STB15NM60ND equivalent, key selection criteria include breakdown voltage margin, conduction loss at 15 A DC, thermal resistance in TO-220FP mounting, and avalanche energy rating for flyback and hard-switched topologies.

Technical Context

This MOSFET employs ST's SuperMESH™ III process to achieve optimized trade-offs between R_DS(on), Q_g, and E_AS. Its 600 V V_DSS supports universal AC input (85–265 VAC) with ≥20% derating, and its 100% rated avalanche capability enables reliable operation in inductive switching without external snubbers.

The device features a fast body diode with t_rr = 120 ns and Q_rr = 1.2 µC, reducing commutation losses in bridge configurations. Gate threshold voltage is specified at 2.0–4.0 V, ensuring compatibility with standard 5 V and 15 V gate drivers while maintaining noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports 400 VDC bus with 50% safety margin for surge and ringing in offline converters.
R_DS(on) max	0.3 Ω @ V_GS = 10 V - Enables ≤2.25 W conduction loss at 15 A, simplifying heatsink requirements.
Q_g	45 nC - Determines gate drive power and switching speed; compatible with common 1–2 A peak gate drivers.
E_AS	420 mJ - Rated single-pulse avalanche energy ensures robustness during overvoltage transients without failure.
t_rr	120 ns - Fast body diode recovery reduces cross-conduction loss in half-bridge and LLC resonant circuits.
R_θJA	60 °C/W - Thermal resistance in TO-220FP package with minimal copper pad; requires heatsink for >5 W dissipation.

Pinout & Package

Package: TO-220FP (full-pack), insulated tab, vertical mounting, 3-pin through-hole. Tab is drain-connected and electrically isolated from PCB mount surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source	Power return path / reference node	Low-impedance connection to source of load; defines local ground for gate drive referencing.
Gate	Control input terminal	High-impedance MOS control node; requires <2.0 V threshold margin and <100 pF layout capacitance for stable turn-on.

Key Features

Feature	Design Value
SuperMESH™ III technology	Optimized cell structure delivering 30% lower R_DS(on) × Q_g figure-of-merit vs. prior generation.
100% avalanche tested	Each unit validated for single-pulse E_AS ≥420 mJ - eliminates need for external clamping in flyback snubber design.
Fast-recovery body diode	t_rr = 120 ns and low Q_rr = 1.2 µC reduce switching loss and EMI in synchronous rectification and phase-shifted topologies.
TO-220FP insulated package	Electrically isolated tab allows direct heatsink mounting without insulating washer, lowering thermal resistance by ~1.5 °C/W.

Applications

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: 300 W universal-input offline flyback converter with primary-side regulation.

IC Role / Device Role: Main high-voltage switching transistor handling 600 V DC link and 15 A peak current.

Use Value: 0.3 Ω R_DS(on) limits conduction loss to <2.3 W at full load, enabling >88% efficiency without forced air cooling.

Use Scenario: 750 W three-phase inverter stage for HVAC blower motor control.

IC Role / Device Role: Low-side switching element in IGBT/MOSFET half-bridge modules driving 24 V–48 V DC bus.

Use Value: Fast body diode (t_rr = 120 ns) minimizes shoot-through risk and reduces gate driver stress during PWM dead-time transitions.

LED Street Lighting Drivers

Telecom DC-DC Converters

Use Scenario: Constant-current buck-boost LED driver operating from 277 VAC line with active PFC front-end.

IC Role / Device Role: Switching transistor in boost PFC stage handling 15 A RMS input current.

Use Value: 45 nC Q_g enables efficient 65 kHz switching with IR2110-based gate drive, reducing driver IC power consumption by 35% vs. higher-Q_g alternatives.

Use Scenario: 48 V to 12 V isolated forward converter in telecom shelf power system.

IC Role / Device Role: Primary-side switch managing 600 V transient spikes during transformer reset.

Use Value: 420 mJ E_AS rating eliminates need for RCD clamp network, reducing BOM count and improving reliability under line surge conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	Same die, TO-220 (non-FP) package with uninsulated tab; R_θJA = 65 °C/W.	Requires insulating pad for heatsink mounting; less suitable for compact chassis-integrated designs.	Select when cost sensitivity outweighs thermal performance and mechanical isolation needs.
FDPF15N60NZ	ON Semiconductor SuperFET II; R_DS(on) = 0.32 Ω, Q_g = 42 nC, E_AS not rated.	Lacks guaranteed avalanche rating; requires external protection in flyback reset scenarios.	Choose only if system-level testing confirms no avalanche stress occurs in final layout.

Compared with STP15NM60ND, the STB15NM60ND offers better thermal interface via insulated tab and lower R_θJA; versus FDPF15N60NZ, it provides verified avalanche ruggedness critical for unclamped inductive switching - a decisive factor in PFC and flyback reliability.

Availability

STB15NM60ND is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial motor drives, LED street lighting drivers, and telecom DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for STB15NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STB15NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where avalanche robustness and low conduction loss are mandatory.

FAQ

What is the maximum continuous drain current rating for STB15NM60ND at 100°C case temperature?

The datasheet specifies I_D = 15 A at T_C = 25°C, derated linearly to 9.4 A at T_C = 100°C using the 0.12 A/°C slope. This reflects safe operation with 60 °C/W R_θJA and 1.5 W power dissipation limit at elevated ambient temperatures.

Does STB15NM60ND require a negative gate voltage for reliable turn-off in high-noise environments?

No - the device has a typical V_GS(th) of 3.0 V and maximum of 4.0 V, with negligible leakage below 2.0 V. A 0 V gate drive fully turns off the MOSFET; adding negative voltage is unnecessary and not recommended per ST's application notes.

Can STB15NM60ND be used in synchronous rectification configurations?

No - its body diode is optimized for fast recovery in hard-switched topologies, not bidirectional conduction. It lacks the low reverse recovery Q_rr and symmetric R_DS(on) required for SR MOSFETs; dedicated synchronous rectifiers like STP16LF60 should be used instead.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes - STB15NM60ND is manufactured in full compliance with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The TO-220FP package uses matte tin-plated leads and halogen-free molding compound.

STB15NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB15NM60ND FAQ

1.How can I place an order for STB15NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STB15NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB15NM60ND reliable?

The price and inventory of STB15NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB15NM60ND is usually 5 days.

3.What payment methods are accepted for STB15NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB15NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB15NM60ND?

STB15NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB15NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB15NM60ND?

For technical support, including STB15NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB15NM60ND requirements.

6.How does Aetrix verify that STB15NM60ND is sourced from the original manufacturer or authorized distributors?

All STB15NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB15NM60ND meets industry standards.

7.What is the process for return or replacement of STB15NM60ND?

All STB15NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STB15NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB15NM60ND part is unused and in its original packaging.

Return procedure for STB15NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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