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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB15NM65N

Name: STB15NM65N
Brand: STMicroelectronics
SKU: STB15NM65N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB15NM65N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB15NM65N.pdf

Description:: MOSFET N-CH 650V 12A D2PAK

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Product details

Overview

STB15NM65N from STMicroelectronics is an N-channel 650 V, 0.25 Ω (typ), 15.5 A (continuous) Power MOSFET in D²PAK (TO-263) package, implementing second-generation MDmesh™ technology for high-efficiency switching converters. It features 100% avalanche tested ruggedness, low gate charge (55 nC), and low input capacitance (1900 pF), enabling fast switching in offline SMPS and PFC stages.

For engineers reviewing the STB15NM65N datasheet, STB15NM65N pinout, STB15NM65N application, or STB15NM65N equivalent, key selection criteria include R_DS(on) at 10 V gate drive, unclamped inductive switching capability (E_AS = 400 mJ), thermal resistance (R_thj-case = 3.6 °C/W), and diode recovery performance (t_rr = 460 ns @ 25°C).

Technical Context

This device uses ST's second-generation MDmesh™ vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 650 V V_DSS rating supports universal-input AC-DC designs up to 380 V DC bus, while the 0.25 Ω R_DS(on) enables high-current operation with low conduction loss at T_C = 25°C.

The MOSFET delivers low gate charge (Q_g = 55 nC) and optimized capacitance profile (C_iss = 1900 pF, C_oss = 110 pF), supporting high-frequency ZVS/ZCS topologies. Its source-drain diode exhibits t_rr = 460 ns and Q_rr = 6 µC at 25°C, reducing switching loss and EMI in hard-switched bridge legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports 380 V DC bus with 20% margin for surge and ringing in offline power supplies.
R_DS(on) max	0.27 Ω @ V_GS = 10 V, I_D = 7.75 A - Ensures <1.5 W conduction loss at 15.5 A continuous current with heatsink.
Q_g	55 nC - Enables efficient gate driving with standard 1–2 A peak drivers at 100–300 kHz switching frequencies.
E_AS	400 mJ - Confirmed single-pulse avalanche energy allows robust operation under transient overvoltage conditions.
t_rr	460 ns @ T_j = 25°C - Fast body diode recovery reduces cross-conduction loss and voltage overshoot in half-bridge configurations.
R_thj-case	3.6 °C/W - Enables 150 W dissipation at ΔT = 540°C rise, suitable for compact heatsink designs in industrial adapters.
I_D (cont)	15.5 A @ T_C = 25°C - Sustains full-load current in 200–300 W LLC or active-clamp forward converters.

Pinout & Package

STB15NM65N is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The drain is connected to the exposed metal tab for enhanced thermal transfer and must be electrically isolated from heatsink unless referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; low input capacitance (1900 pF) minimizes driver power loss.
2 (Drain)	High-side power node	Connected to internal die backside and exposed tab; requires insulated mounting for floating applications.
3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; low-inductance layout critical for dv/dt immunity.

Key Features

Feature	Design Value
Second-generation MDmesh™ structure	Reduces R_DS(on) × Q_g figure-of-merit by >30% vs. first-gen, improving efficiency in 100–500 kHz converters.
100% avalanche rated	Guarantees operation under unclamped inductive switching stress without derating, eliminating need for snubbers in many PFC designs.
Low gate input resistance	Enables stable PWM control with minimal gate oscillation, even with long PCB traces or optocoupler-based isolation.
ECOPACK® lead-free package	Complies with RoHS and JEDEC JESD97; qualified for reflow soldering up to 260°C peak temperature.
Optimized body diode	Soft reverse recovery (Q_rr = 6 µC, t_rr = 460 ns) reduces EMI and voltage spikes in synchronous rectification and bridge circuits.

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: High-density 80+ Titanium server power supply operating at 200–300 kHz with LLC resonant topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 380 V DC bus and 12–15 A peak current per phase.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses, enabling >96% efficiency at full load without forced air cooling.

Use Scenario: 250 W industrial AC-DC adapter for PLC I/O modules requiring wide input range (85–264 VAC) and high reliability.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter with 100 kHz fixed-frequency operation.

Use Value: Avalanche ruggedness ensures survival during line surges and output short-circuits without external protection components.

PFC Boost Stage

Motor Drive Inverter Leg

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in telecom rectifier with 3.3 kW output.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65–100 kHz with critical gate charge control.

Use Value: Low C_oss (110 pF) and C_rss (10 pF) minimize turn-off loss and improve light-load efficiency.

Use Scenario: Half-bridge inverter leg in 1.5 kW servo drive for CNC equipment, operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switch with fast body diode recovery to handle regenerative braking currents.

Use Value: Soft-recovery diode limits voltage overshoot during freewheeling, reducing stress on DC-link capacitors and gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW15NM65N	Same die, TO-247 package; R_thj-case = 0.83 °C/W vs. 3.6 °C/W for STB15NM65N.	Better thermal performance in high-power discrete designs but requires through-hole PCB layout and larger heatsink footprint.	Select when board space permits and junction temperature must stay below 125°C under 15.5 A continuous load.
FDPF15N65	ON Semiconductor part; R_DS(on) = 0.32 Ω (max), Q_g = 52 nC, t_rr = 520 ns - higher conduction loss, slightly slower diode.	Valid for cost-sensitive industrial SMPS where 5–10% efficiency penalty is acceptable.	Choose only if STB15NM65N lead time exceeds 12 weeks and thermal margin allows higher R_DS(on).

Compared with STW15NM65N, STB15NM65N trades thermal performance for surface-mount assembly and smaller footprint; versus FDPF15N65, it delivers lower conduction loss and faster diode recovery at premium cost and tighter supply chain constraints.

Availability

STB15NM65N is available at Aetrix Electronics and suitable for server PSUs, industrial AC-DC adapters, and PFC boost stages requiring stable component supply across multi-year production cycles.

Supply support for STB15NM65N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies and motor control inverters demanding low R_DS(on) × Q_g and rugged avalanche capability.

FAQ

What is the maximum continuous drain current for STB15NM65N at 100°C case temperature?

The maximum continuous drain current is 10 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the D²PAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding T_j = 150°C.

Does STB15NM65N require a negative gate voltage for reliable turn-off in high-dv/dt environments?

No - the device has a gate threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. While a small negative bias (–5 V) improves noise immunity, the datasheet confirms stable turn-off with 0 V gate drive; no negative voltage is required for functional operation.

Can STB15NM65N be used in synchronous rectification applications?

No - it is an N-channel high-side switch optimized for primary-side switching, not low-side synchronous rectification. Its body diode is not rated for bidirectional conduction under synchronous control, and its gate drive timing characteristics are not designed for adaptive dead-time control required in SR FETs.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 4.7 Ω gate resistor is validated in the datasheet (Table 7) for switching time measurements at 100 kHz. For production use, 4.7–10 Ω balances switching speed (t_f = 26 ns) and gate oscillation suppression; values below 3.3 Ω increase EMI risk without meaningful efficiency gain above 100 kHz.

STB15NM65N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 7.75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB15NM65N FAQ

1.How can I place an order for STB15NM65N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB15NM65N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB15NM65N reliable?

The price and inventory of STB15NM65N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB15NM65N is usually 5 days.

3.What payment methods are accepted for STB15NM65N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB15NM65N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB15NM65N?

STB15NM65N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB15NM65N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB15NM65N?

For technical support, including STB15NM65N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB15NM65N requirements.

6.How does Aetrix verify that STB15NM65N is sourced from the original manufacturer or authorized distributors?

All STB15NM65N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB15NM65N meets industry standards.

7.What is the process for return or replacement of STB15NM65N?

All STB15NM65N units undergo pre-shipment inspection (PSI). If there is an issue with STB15NM65N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB15NM65N part is unused and in its original packaging.

Return procedure for STB15NM65N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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