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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB160N75F3

Name: STB160N75F3
Brand: STMicroelectronics
SKU: STB160N75F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB160N75F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB160N75F3.pdf

Description:: MOSFET N-CH 75V 120A D2PAK

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Product details

Overview

STB160N75F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET based on STripFET™ F3 technology, designed for high-current switching in DC-DC converters and motor drives. It delivers 75 V drain-source voltage rating, 3.7 mΩ maximum R_DS(on) at V_GS = 10 V, 120 A continuous drain current (package-limited), and 600 mJ single-pulse avalanche energy - enabling robust operation in 48 V industrial power supplies.

For engineers reviewing the STB160N75F3 datasheet, STB160N75F3 pinout, STB160N75F3 application, or STB160N75F3 equivalent, key selection criteria include its D²PAK package thermal resistance (R_thj-pcb = 50 °C/W on 1 in² FR4), low gate charge (Q_g = 85 nC), and fast switching (t_r = 65 ns, t_f = 15 ns) under 4.7 Ω gate drive.

Technical Context

This MOSFET employs ST's STripFET™ F3 process to achieve ultra-low on-resistance and high cell density while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2–4 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers, and its 20 V/ns dv/dt rating supports stable operation in hard-switched topologies.

The device integrates a fast-recovery source-drain diode (t_rr = 70 ns, Q_rr = 150 nC) optimized for synchronous rectification and freewheeling in buck and half-bridge configurations. Thermal design is anchored by a junction-to-case resistance of 0.45 °C/W and a maximum operating junction temperature of 175 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Supports 48 V nominal bus systems with 50 % safety margin against transients.
R_DS(on) max	3.7 mΩ at V_GS = 10 V - Enables ≤ 53 W conduction loss at 120 A, critical for high-efficiency power stages.
I_D cont	120 A at T_C = 25 °C - Package-limited current capacity suitable for TO-220/TO-247/D²PAK footprint scalability.
Q_g	85 nC - Determines gate driver power requirement and switching speed under fixed R_G = 4.7 Ω.
E_AS	600 mJ - Specifies single-pulse avalanche ruggedness for reliable operation during inductive turn-off faults.
t_r/t_f	65 ns / 15 ns - Defines minimum achievable dead time and EMI profile in PWM-controlled converters.
V_SD	1.5 V at I_SD = 120 A - Low forward voltage of integrated body diode reduces freewheeling losses in non-synchronous designs.

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for enhanced thermal performance and PCB-level heat dissipation. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤ ±20 V bias; low input capacitance (C_iss = 6750 pF) eases driver selection.
Pin 2	Drain	High-side switch node connection; electrically tied to exposed metal tab for direct thermal coupling to heatsink or copper pour.
Pin 3	Source	Power return path and reference for gate drive; must be routed with low inductance to minimize switching overshoot.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.7 mΩ enables <1 W conduction loss at 20 A, reducing thermal load in compact 48 V telecom PSUs.
100 % avalanche tested	Guarantees 600 mJ single-pulse energy handling without parameter shift - eliminates need for external snubbers in flyback designs.
Low gate charge	85 nC total gate charge allows use of low-power drivers (e.g., TC4427) while achieving <100 ns switching transitions.
Fast body diode recovery	70 ns reverse recovery time and 150 nC Q_rr reduce cross-conduction losses in synchronous buck topologies.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 marking requirements for industrial environmental compliance.

Applications

DC-DC Converters

Motor Drives

Use Scenario: Primary-side switch in isolated 48 V → 12 V half-bridge DC-DC converter for datacom power shelves.

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer via transformer primary winding; operates at 200–500 kHz.

Use Value: 3.7 mΩ R_DS(on) and 85 nC Q_g jointly enable >96 % efficiency at full load while minimizing gate drive losses.

Use Scenario: Phase-leg switch in 3-phase inverter driving 1–3 kW BLDC motors in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter stage; handles 120 A peak phase current.

Use Value: 600 mJ E_AS withstands inductive kickback during short-circuit events without failure, improving system reliability.

Industrial Power Supplies

UPS Systems

Use Scenario: Output rectifier in non-isolated 48 V → 24 V buck converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven with complementary gate signal.

Use Value: 1.5 V V_SD and 70 ns t_rr cut conduction and recovery losses by 40 % vs. 40 V Schottky, raising full-load efficiency to 94.5 %.

Use Scenario: Battery charging switch in online double-conversion UPS managing 48 V Li-ion string charging.

IC Role / Device Role / Timing Role: Bidirectional power switch enabling both AC→DC charging and DC→AC inversion paths.

Use Value: 175 °C T_jmax and 50 °C/W R_thj-pcb allow sustained 100 A operation on standard 2 oz Cu PCB without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP160N75F3	TO-220 package; R_DS(on) = 4.0 mΩ; R_thj-case = 0.45 °C/W; same die but different leadform.	Requires through-hole assembly and heatsink mounting; less suitable for high-density automated SMT lines.	Select when mechanical mounting constraints favor through-hole or when legacy TO-220 footprint reuse is required.
IRFB4115PBF	75 V, 3.2 mΩ, 110 A, TO-220; higher Q_g (120 nC); no avalanche rating published.	Lacks guaranteed E_AS spec; unsuitable for unclamped inductive loads without external protection.	Choose only in cost-sensitive, low-avalanche-risk applications where gate drive strength permits higher Q_g.

Compared with STP160N75F3, STB160N75F3 offers superior board-level thermal management via D²PAK's lower R_thj-pcb; versus IRFB4115PBF, it provides documented avalanche ruggedness and tighter R_DS(on) tolerance - critical for mission-critical industrial power stages.

Availability

STB160N75F3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control inverters, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for STB160N75F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STB160N75F3 belongs to the STripFET™ F3 power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 48 V industrial and telecom power architectures.

FAQ

What is the maximum safe operating temperature for STB160N75F3?

The STB160N75F3 has a maximum junction temperature (T_j) of 175 °C and a storage temperature range of –55 to 175 °C. Its thermal resistance junction-to-PCB is 50 °C/W when mounted on 1 in² of 2 oz copper, enabling reliable operation at 120 A with appropriate board layout and ambient conditions below 85 °C.

Does STB160N75F3 support logic-level gate drive?

No - STB160N75F3 requires V_GS = 10 V for full R_DS(on) specification (3.7 mΩ). Its gate threshold voltage ranges from 2 V to 4 V, so it can turn on with 5 V logic, but R_DS(on) rises significantly above 4.5 V; optimal performance demands 10 V gate drive per datasheet test conditions.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.5 V at 120 A and t_rr = 70 ns, making it slower and higher-V_F than most 45 V Schottkys (e.g., 0.55 V, 10 ns). However, its co-packaged integration eliminates layout parasitics and enables precise timing control in synchronous rectification - advantageous where layout space and EMI are constrained.

Is STB160N75F3 suitable for automotive applications?

STB160N75F3 is not qualified to AEC-Q101 and lacks automotive-grade screening or guaranteed PPAP documentation. While its 175 °C T_jmax and robust avalanche rating meet some under-hood thermal requirements, ST explicitly states non-automotive grade devices are used in automotive applications at user's own risk - it is intended for industrial and telecom power systems.

STB160N75F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB160N75F3 FAQ

1.How can I place an order for STB160N75F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB160N75F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB160N75F3 reliable?

The price and inventory of STB160N75F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB160N75F3 is usually 5 days.

3.What payment methods are accepted for STB160N75F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB160N75F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB160N75F3?

STB160N75F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB160N75F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB160N75F3?

For technical support, including STB160N75F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB160N75F3 requirements.

6.How does Aetrix verify that STB160N75F3 is sourced from the original manufacturer or authorized distributors?

All STB160N75F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB160N75F3 meets industry standards.

7.What is the process for return or replacement of STB160N75F3?

All STB160N75F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB160N75F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB160N75F3 part is unused and in its original packaging.

Return procedure for STB160N75F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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