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STMicroelectronics STB160NF3LLT4
- Part No.:
- STB160NF3LLT4
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB160NF3LLT4.pdf
- Description:
- MOSFET N-CH 30V 160A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,032
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Product details
Overview
STB160NF3LL from STMicroelectronics is an N-channel 30V logic-level Power MOSFET in D2PAK package, featuring 0.0028Ω RDS(on) at VGS = 10V, 160A continuous drain current, and 300W total power dissipation. It is designed for high-efficiency DC-DC converters and synchronous rectification where low conduction loss and fast switching are critical.
For engineers reviewing the STB160NF3LL datasheet, STB160NF3LL pinout, STB160NF3LL application, or STB160NF3LL equivalent, key selection criteria include its ultra-low on-resistance, avalanche ruggedness, gate-threshold voltage of 1V (min), diode reverse recovery time of 100ns, and thermal resistance of 0.5°C/W junction-to-case - all verified under industrial temperature and pulsed-current conditions.
Technical Context
This MOSFET employs ST's STripFET™ III process to achieve optimized cell density and reduced specific on-resistance. Its logic-level gate drive (VGS(th) = 1V min) enables direct interfacing with 3.3V/5V controllers without level-shifting, while the integrated source-drain diode supports synchronous rectification with 1.3V forward voltage at 160A.
The device is fully avalanche-rated (EAS = 1.2mJ) and features robust safe operating area (SOA) up to 640A pulsed drain current. Dynamic parameters - including 80nC total gate charge, 5500pF input capacitance, and 130ns fall time - support high-frequency switching in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum blocking voltage compatible with 24V bus systems and automotive 12V/24V DC-DC stages |
| RDS(on) | 0.0028Ω @ VGS=10V - Enables <1W conduction loss at 160A, critical for thermal management in compact converters |
| ID (cont) | 160A @ TC=25°C - Sustained current capability limited by D2PAK package wire bonding, not silicon |
| Qg | 80nC @ VGS=4.5V - Determines gate driver power requirement and switching loss in 100–500kHz applications |
| trr | 100ns @ Tj=150°C - Limits reverse recovery losses during hard commutation in synchronous buck converters |
| Rth(j-c) | 0.5°C/W - Enables 300W dissipation with ≤150°C case temperature rise, supporting heatsink-limited designs |
Pinout & Package
Package: D2PAK (TO-263), surface-mount, thermally enhanced with exposed drain pad. Compliant with ECOPACK® environmental standards and lead-free second-level interconnect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connected to PCB ground plane for thermal and electrical return path |
| Pin 2 (Gate) | Control input (G) | Logic-level compatible; requires <1V threshold to initiate conduction, suitable for microcontroller GPIO drive |
| Pin 3 (Drain) | Power output (D) | Exposed copper pad on underside - electrically and thermally tied to drain; must be soldered to large copper pour |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees single-pulse energy handling up to 1.2mJ without degradation - essential for unclamped inductive switching |
| Ultra-low RDS(on) | 0.0028Ω minimizes I²R losses in high-current paths, directly improving efficiency in 12V→1V VRMs |
| Logic-level gate drive | VGS(th) = 1V min allows direct drive from 3.3V PWM controllers, eliminating external level shifters |
| Integrated body diode | 160A continuous / 640A pulsed source-drain diode with 100ns trr supports synchronous rectification without external Schottky |
Applications
| Server VRM Phase Legs | Automotive DC-DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2V @ >200A). IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase leg, switching at 300–600kHz. Use Value: 0.0028Ω RDS(on) reduces conduction loss by >40% vs. comparable 3.5mΩ devices, lowering thermal load on VRM heatsinks. | Use Scenario: 12V-to-5V/3.3V step-down converter in ADAS ECU or infotainment head unit. IC Role / Device Role / Timing Role: Primary power switch in high-efficiency buck regulator with 50–200kHz switching frequency. Use Value: Avalanche rating and 150°C max junction temperature ensure reliability under load dump and cold-crank conditions. |
| Industrial Motor Drive Half-Bridge | Telecom Rectifier Modules |
Use Scenario: Low-side switch in 24V/48V BLDC motor gate driver stage for HVAC blowers or pumps. IC Role / Device Role / Timing Role: Fast-switching N-channel switch controlling PWM-driven motor winding current. Use Value: 130ns fall time and 80nC Qg enable clean turn-off with minimal shoot-through risk in half-bridge configurations. | Use Scenario: Output synchronous rectifier in 48V telecom rectifier module delivering 100A+ to -48V distribution bus. IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diodes to reduce forward drop and improve system efficiency. Use Value: 1.3V VSD at 160A and 100ns trr cut conduction and recovery losses by >30% versus discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404ZPBF | RDS(on) = 0.004Ω @ 10V; higher gate charge (130nC); TO-220 package | Limited to lower-current (<120A) and lower-frequency (<100kHz) use due to thermal and switching constraints | Select when cost sensitivity outweighs efficiency and board space requirements; unsuitable for D2PAK-restricted layouts |
| IXTH160N04S5 | RDS(on) = 0.0022Ω @ 10V; higher VDS (40V); TO-247 package; no logic-level gate | Requires 10V+ gate drive; better for 36–48V systems but incompatible with 3.3V controller interfaces | Choose for higher-voltage margin and lower RDS(on), but only if gate driver supports ≥10V and layout accommodates TO-247 |
Compared with IRF1404ZPBF and IXTH160N04S5, STB160NF3LL uniquely balances logic-level drive, ultra-low on-resistance, and D2PAK thermal performance - making it optimal for space-constrained, high-efficiency 24–30V DC-DC designs where gate drive simplicity and thermal density are prioritized.
Availability
STB160NF3LL is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for STB160NF3LL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive-grade ICs.
The STripFET™ III MOSFET product line targets high-efficiency power conversion with emphasis on low RDS(on), fast switching, and ruggedness for industrial, computing, and automotive power stages.
FAQ
Is STB160NF3LL suitable for 3.3V microcontroller gate drive?
Yes. With a minimum gate threshold voltage of 1V and guaranteed turn-on at VGS = 4.5V, STB160NF3LL is explicitly designed as a logic-level MOSFET. It delivers full 160A conduction at 4.5V gate drive and exhibits stable RDS(on) down to 3.3V, enabling direct interface with modern MCU GPIOs without external level shifting.
What is the maximum recommended PCB copper area for the D2PAK drain pad?
ST recommends a minimum 400 mm² (20 mm × 20 mm) of 2-oz copper connected to the exposed drain pad via ≥6 thermal vias (0.3mm diameter, filled or plated). This achieves the specified 0.5°C/W Rth(j-c) and prevents localized hot spots during 300W operation at TC = 100°C.
Does STB160NF3LL support paralleling for higher current?
Yes, but with strict layout and gate drive requirements. The device's positive temperature coefficient of RDS(on) enables inherent current sharing. Successful paralleling requires matched gate resistors (≤1Ω), symmetrical PCB traces, and individual gate routing to minimize loop inductance - per ST Application Note AN4191.
Is STB160NF3LL compliant with RoHS and REACH regulations?
Yes. STB160NF3LL is manufactured in an ECOPACK®-compliant D2PAK package with lead-free second-level interconnect, fully conforming to RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The inner box label and package marking confirm compliance per JEDEC JESD97.
STB160NF3LLT4 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ III
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 4.5 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB160NF3LLT4 FAQ
1.How can I place an order for STB160NF3LLT4 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB160NF3LLT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB160NF3LLT4 reliable?
The price and inventory of STB160NF3LLT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB160NF3LLT4 is usually 5 days.
3.What payment methods are accepted for STB160NF3LLT4?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB160NF3LLT4 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB160NF3LLT4?
STB160NF3LLT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB160NF3LLT4 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB160NF3LLT4?
For technical support, including STB160NF3LLT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB160NF3LLT4 requirements.
6.How does Aetrix verify that STB160NF3LLT4 is sourced from the original manufacturer or authorized distributors?
All STB160NF3LLT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB160NF3LLT4 meets industry standards.
7.What is the process for return or replacement of STB160NF3LLT4?
All STB160NF3LLT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB160NF3LLT4, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB160NF3LLT4 part is unused and in its original packaging.
Return procedure for STB160NF3LLT4:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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