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STMicroelectronics STB16NM50N
- Part No.:
- STB16NM50N
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB16NM50N.pdf
- Description:
- MOSFET N-CH 500V 15A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,310
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Product details
Overview
STB16NM50N from STMicroelectronics is an N-channel 500 V, 15 A, 0.21 Ω (typ) MDmesh™ II Power MOSFET in D²PAK package, designed for high-efficiency switching converters requiring low conduction loss and fast switching. It features 100% avalanche tested ruggedness, 38 nC total gate charge, and 125 W power dissipation at TC = 25°C, enabling use in industrial SMPS and PFC stages.
For engineers reviewing the STB16NM50N datasheet, STB16NM50N pinout, STB16NM50N application, or STB16NM50N equivalent, key selection criteria include RDS(on) at 10 V drive, dv/dt immunity (30 V/ns), unclamped inductive switching capability (EAS = 470 mJ), and thermal resistance (Rthj-case = 1.0 °C/W).
Technical Context
This device employs ST's second-generation MDmesh™ vertical structure with strip layout to minimize both on-resistance and gate charge simultaneously. Its 500 V VDSS rating and 15 A continuous drain current support operation in universal-input offline converters up to 2 kW.
The MOSFET integrates a robust body diode with 15 A continuous source-drain current and 1.3 V forward voltage at 15 A, optimized for synchronous rectification and freewheeling in hard-switched topologies. Its 15 V/ns peak diode recovery dv/dt rating ensures reliability under fast inductive turn-off conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - Withstands full-line surge voltages in 230 VAC mains-connected SMPS without clamping. |
| RDS(on) max | 0.26 Ω @ VGS = 10 V - Enables <1.95 W conduction loss at 15 A, critical for thermal management in compact designs. |
| Qg | 38 nC - Low gate charge reduces driver power demand and enables >100 kHz operation with standard gate drivers. |
| EAS | 470 mJ - Confirmed single-pulse avalanche energy supports reliable unclamped inductive switching in flyback/PFC circuits. |
| Rthj-case | 1.0 °C/W - Allows direct mounting to heatsink for high-power density layouts; junction-to-case path dominates thermal performance. |
| ID (pulsed) | 60 A - Supports short-duration overload conditions such as startup surges or transient fault currents. |
| Ciss | 1200 pF - Input capacitance defines Miller plateau duration and influences gate drive loop stability requirements. |
Pinout & Package
D²PAK (TO-263) package: surface-mount, thermally enhanced outline with exposed drain pad for low-inductance, high-current PCB routing and direct heatsink attachment via soldered thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (GATE) | Control electrode | High-impedance input requiring <5 Ω series gate resistor to damp ringing; referenced to source for level-shifting compatibility. |
| 2 (DRAIN) | Power output terminal | Exposed copper pad on underside - must be soldered to large copper area or heatsink; carries full load current and high dv/dt noise. |
| 3 (SOURCE) | Reference node / return path | Low-inductance connection point for gate driver return and current-sense resistor; forms common reference for control logic. |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II technology | Combines ultra-low RDS(on) and Qg to reduce both conduction and switching losses in high-frequency converters. |
| 100% avalanche rated | Guarantees robustness against inductive energy spikes without external snubbers in flyback or LLC resonant converters. |
| Low Coss (80 pF) | Minimizes capacitive turn-off loss and improves light-load efficiency in quasi-resonant topologies. |
| ECOPACK® compliant | Lead-free second-level interconnect meets RoHS and JEDEC JESD97 standards for industrial and consumer applications. |
| Fast diode recovery (trr = 400 ns) | Reduces reverse recovery loss and EMI generation during hard commutation in bridge configurations. |
Applications
| Industrial Switch-Mode Power Supplies | Server & Telecom AC-DC Rectification |
|---|---|
|
Use Scenario: Primary-side switch in 1–2 kW universal-input offline SMPS with active PFC front-end. IC Role / Device Role / Timing Role: High-voltage power switch operating at 65–100 kHz with zero-voltage switching assistance. Use Value: 0.21 Ω RDS(on) minimizes conduction loss at full load; 470 mJ EAS tolerates line transients without failure. |
Use Scenario: DC-DC intermediate bus converter (48 V input) delivering 12 V/100 A to server motherboard VRMs. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant stage with 300–500 kHz switching. Use Value: Low Qg (38 nC) enables efficient gate driving at high frequency; fast trr (400 ns) suppresses shoot-through risk. |
| Motor Drive Inverter Stages | Renewable Energy Inverters |
|
Use Scenario: Half-bridge leg in 3-phase BLDC motor driver for HVAC compressors (≤5 kW). IC Role / Device Role / Timing Role: High-side/low-side switching element with bootstrap gate drive and 15 V gate clamp. Use Value: 15 A continuous current supports 3.5 kW mechanical output; 1.0 °C/W Rthj-case allows direct heatsink mounting for thermal headroom. |
Use Scenario: DC link switch in string-level solar microinverter (250–400 V DC input). IC Role / Device Role / Timing Role: Unidirectional switch in interleaved boost stage operating at 100 kHz with soft switching. Use Value: 500 V VDSS accommodates PV open-circuit voltage derating; low Ciss/Coss ratio improves ZVS initiation margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NM50N | Same die, TO-220 package; Rthj-case = 1.0 °C/W but higher Rthj-amb (62.5 °C/W vs 50 °C/W for D²PAK). | Preferred for prototyping or low-volume through-hole assembly; less suitable for high-density automated SMT production. | Select when manual heatsink mounting and board-level serviceability are prioritized over thermal density. |
| IPP60R190C6 | 600 V CoolMOS™ P6; RDS(on) = 0.19 Ω but Qg = 45 nC; higher VGS(th) (3.5 V typ) vs 2.5 V typ for STB16NM50N. | Better suited for ZVS/ZCS topologies due to lower Coss; requires stronger gate drive for same switching speed. | Choose when operating above 150 kHz or needing tighter VGS(th) tolerance across temperature for analog control loops. |
Compared with STP16NM50N and IPP60R190C6, STB16NM50N offers optimal balance of low RDS(on), moderate Qg, and surface-mount thermal performance-making it ideal for high-volume, space-constrained industrial power supplies where manufacturability and thermal reliability are co-prioritized.
Availability
STB16NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, motor drives, and renewable energy inverters requiring stable component supply and long-term production continuity.
Supply support for STB16NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.
This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in industrial and computing power systems.
FAQ
What is the maximum safe operating junction temperature for STB16NM50N?
The absolute maximum operating junction temperature is 150°C, as specified in Table 2 of the datasheet. Continuous operation above this limit risks permanent degradation of the silicon die and bond wires. Thermal design must ensure Tj remains ≤150°C under worst-case ambient and load conditions, using the 1.0 °C/W Rthj-case value and measured heatsink temperature.
Does STB16NM50N require a gate resistor, and what value is recommended?
Yes-a gate resistor is mandatory to control dV/dt and prevent oscillation. For typical 100 kHz operation with a 1 A gate driver, a 4.7 Ω resistor is recommended (per Figure 18 test circuit). Lower values (2.2–3.3 Ω) improve switching speed but increase EMI; higher values (10–22 Ω) reduce ringing at the cost of increased switching loss.
Can STB16NM50N be used in synchronous rectification applications?
Yes-the integrated body diode has 15 A continuous current rating and 1.3 V forward voltage at 15 A, making it suitable for low-side synchronous rectification in buck or LLC converters. However, for high-efficiency designs, an external Schottky or MOSFET-based synchronous rectifier is preferred due to lower VSD and controllable turn-on timing.
Is STB16NM50N lead-free and RoHS compliant?
Yes-STB16NM50N is supplied in an ECOPACK®-compliant D²PAK package with lead-free second-level interconnect, meeting RoHS Directive 2011/65/EU and JEDEC Standard JESD97. The inner box label explicitly marks the lead-free status, and soldering profiles follow IPC-J-STD-020 for moisture sensitivity level (MSL) 3.
STB16NM50N Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 260mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
STB16NM50N FAQ
1.How can I place an order for STB16NM50N through Aetrix?
Please submit a Request for Quotation (RFQ) for STB16NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB16NM50N reliable?
The price and inventory of STB16NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB16NM50N is usually 5 days.
3.What payment methods are accepted for STB16NM50N?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB16NM50N transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB16NM50N?
STB16NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB16NM50N order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB16NM50N?
For technical support, including STB16NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB16NM50N requirements.
6.How does Aetrix verify that STB16NM50N is sourced from the original manufacturer or authorized distributors?
All STB16NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB16NM50N meets industry standards.
7.What is the process for return or replacement of STB16NM50N?
All STB16NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STB16NM50N, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB16NM50N part is unused and in its original packaging.
Return procedure for STB16NM50N:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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