My Inquiry
My Account
STMicroelectronics STB170NF04
- Part No.:
- STB170NF04
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB170NF04.pdf
- Description:
- MOSFET N-CH 40V 80A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:640
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STB170NF04 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 40 V VDS, 4.4 mΩ typical RDS(on) at VGS = 10 V, and 80 A continuous drain current at TC = 25 °C. It features rugged avalanche capability (EAS = 1.5 J), low gate charge (Qg = 117 nC), and is optimized for high-efficiency automotive switching applications including motor control and DC-DC conversion.
For engineers reviewing the STB170NF04 datasheet, STB170NF04 pinout, STB170NF04 application, or STB170NF04 equivalent, key selection criteria include its 40 V breakdown voltage, 4.4 mΩ on-resistance, 300 W power dissipation, thermal resistance of 0.5 °C/W (junction-to-case), and suitability for high-current, high-reliability automotive power stages.
Technical Context
This STripFET™ II device uses ST's single-feature-size strip-based process to achieve high cell density and exceptional manufacturing reproducibility. Its design delivers low RDS(on), low Qg, and robust unclamped inductive switching performance with 1.5 J single-pulse avalanche energy rating.
The MOSFET supports standard-threshold gate drive (VGS(th) = 2–4 V), operates across –55 to +175 °C junction temperature range, and exhibits fast switching characteristics: td(on) = 26 ns, tr = 57 ns, td(off) = 100 ns, tf = 66 ns under 40 A/20 V conditions with 4.7 Ω gate resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage; defines safe operation in 12 V/24 V automotive systems with transient margin. |
| RDS(on) typ. | 4.4 mΩ @ VGS = 10 V, ID = 40 A - Enables <1.8 W conduction loss at 80 A, critical for thermally constrained PCB layouts. |
| ID cont. | 80 A @ TC = 25 °C - Sustains high-current loads such as starter relays or BLDC phase legs without derating at heatsink interface. |
| EAS | 1.5 J - Confirmed single-pulse avalanche energy at Tj = 25 °C, ID = 40 A, VDD = 30 V; ensures reliability during inductive turn-off transients. |
| Qg | 117 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz+ switching with moderate gate drivers. |
| Rth(j–case) | 0.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for 300 W power dissipation at ≤ 150 °C case temperature. |
| dv/dt rating | 8 V/ns - Peak diode recovery voltage slope limit ensures immunity to parasitic turn-on during fast commutation in half-bridge topologies. |
Pinout & Package
D2PAK (TO-263) package with exposed drain tab (pins 1–3: Gate, Drain, Source; tab electrically connected to Drain). Mounting requires thermal interface material between tab and heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts standard 10 V logic-level drive; threshold voltage 2–4 V enables compatibility with microcontroller GPIOs. |
| Pin 2 (D) | Drain | Main high-side switching node; internally bonded to metal tab for low-inductance, high-current path and thermal conduction. |
| Pin 3 (S) | Source | Power return reference; connects to ground or low-side switch; source-drain diode supports freewheeling in buck/bridge configurations. |
| Tab (D) | Drain (exposed) | Primary thermal and current path; must be electrically isolated from PCB ground plane unless circuit topology requires common-drain configuration. |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Single-feature-size strip architecture reduces alignment steps, yielding tight RDS(on) distribution and high manufacturing yield. |
| Rugged avalanche rating | 1.5 J single-pulse EAS validated per JEDEC JESD24-11; eliminates need for external snubbers in inductive load switching. |
| Low gate charge | 117 nC total gate charge minimizes driver power loss and enables faster switching with lower gate drive current requirements. |
| Standard threshold drive | VGS(th) = 2–4 V allows direct interfacing with 3.3 V/5 V MCUs without level-shifting, simplifying gate driver design. |
| High current density | 80 A continuous rating in D2PAK reflects optimized die size and packaging; achieves >100 A/mm² effective current density at TC = 25 °C. |
Applications
| Automotive Body Control Module (BCM) | 12 V DC-DC Buck Converter |
|---|---|
|
Use Scenario: High-side power distribution for lighting, window lift, and seat actuation in 12 V vehicle architectures. IC Role / Device Role / Timing Role: N-channel high-side switch with integrated avalanche protection, replacing mechanical relays. Use Value: Eliminates relay chatter and contact wear; 4.4 mΩ RDS(on) reduces heat generation versus discrete alternatives in space-constrained BCM housings. |
Use Scenario: Primary synchronous rectifier in 12 V input, 3.3 V/5 V output automotive buck converters. IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck topology operating at 200–500 kHz. Use Value: 117 nC Qg and 57 ns rise time support high-frequency operation while maintaining <1.8 W conduction loss at full load. |
| BLDC Motor Phase Leg (24 V System) | Starter Solenoid Driver |
|
Use Scenario: Half-bridge phase leg in 24 V brushless DC motor drives for HVAC blowers and power steering assist. IC Role / Device Role / Timing Role: Low-side switch handling 80 A peak phase current with fast 66 ns fall time for precise PWM timing. Use Value: 0.5 °C/W Rth(j–case) enables direct heatsink mounting, sustaining 300 W dissipation during stall conditions without thermal shutdown. |
Use Scenario: High-current solenoid activation in engine start-stop systems requiring 300–500 ms pulses at >100 A peak. IC Role / Device Role / Timing Role: Single-pole, high-current power switch replacing electromechanical solenoids in starter circuits. Use Value: 320 A pulsed drain current (IDM) and 1.5 J EAS ensure reliable engagement even during battery voltage sag or cold-cranking conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 40 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1704PBF | RDS(on) = 5.8 mΩ (higher), Qg = 130 nC (higher), same D2PAK package, no specified EAS rating | Lacks documented avalanche capability; less suitable for unclamped inductive loads like solenoids or motor phases | Prefer when cost sensitivity outweighs avalanche robustness and conduction loss is acceptable at lower current levels. |
| STB160NF04 | RDS(on) = 4.9 mΩ (slightly higher), identical 40 V rating, same STripFET™ II process, 1.3 J EAS | Slightly reduced avalanche margin and higher conduction loss; otherwise functionally interchangeable | Select when inventory availability or legacy BOM continuity favors STB160NF04; verify thermal margin in 80 A continuous use cases. |
Compared with IRF1704PBF and STB160NF04, STB170NF04 offers the lowest RDS(on) and highest validated avalanche energy, making it optimal for automotive applications demanding both efficiency and fault resilience under transient stress.
Availability
STB170NF04 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V/24 V DC-DC converters, BLDC motor drives, and starter solenoid drivers requiring stable component supply across extended production lifecycles.
Supply support for STB170NF04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete devices, and MEMS sensors for automotive, industrial, and consumer markets.
STB170NF04 belongs to ST's STripFET™ II Power MOSFET product line, engineered specifically for high-current, high-reliability automotive power switching where low on-resistance, rugged avalanche behavior, and thermal efficiency are mandatory.
FAQ
Is STB170NF04 suitable for high-side switching in 12 V automotive systems?
Yes - STB170NF04 supports high-side configuration when used with appropriate gate driving circuitry (e.g., bootstrap or isolated gate driver). Its 40 V VDS rating provides sufficient margin above nominal 12 V battery voltage, including load-dump transients up to 35 V. The 2–4 V gate threshold enables compatibility with standard 12 V gate drive rails.
What is the maximum continuous drain current at 100 °C case temperature?
The datasheet specifies ID = 80 A at both TC = 25 °C and TC = 100 °C, indicating the package and die design sustain full rated current across this range without derating. This is enabled by the 0.5 °C/W Rth(j–case) and robust thermal design of the D2PAK package.
Does STB170NF04 have a built-in body diode, and what are its characteristics?
Yes - it integrates a fast, rugged source-drain diode with forward voltage VSD = 1.5 V at ISD = 80 A and reverse recovery time trr = 70 ns at Tj = 150 °C. This diode supports freewheeling in buck, flyback, and half-bridge topologies and is characterized for unclamped inductive switching.
Can STB170NF04 replace older STB160NF04 in existing designs?
Yes - STB170NF04 is a direct drop-in replacement for STB160NF04 in most applications, offering lower RDS(on) (4.4 vs. 4.9 mΩ) and higher avalanche energy (1.5 vs. 1.3 J). No layout or drive changes are required, though thermal performance improves marginally due to reduced conduction loss.
STB170NF04 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB170NF04 FAQ
1.How can I place an order for STB170NF04 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB170NF04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB170NF04 reliable?
The price and inventory of STB170NF04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB170NF04 is usually 5 days.
3.What payment methods are accepted for STB170NF04?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB170NF04 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB170NF04?
STB170NF04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB170NF04 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB170NF04?
For technical support, including STB170NF04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB170NF04 requirements.
6.How does Aetrix verify that STB170NF04 is sourced from the original manufacturer or authorized distributors?
All STB170NF04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB170NF04 meets industry standards.
7.What is the process for return or replacement of STB170NF04?
All STB170NF04 units undergo pre-shipment inspection (PSI). If there is an issue with STB170NF04, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB170NF04 part is unused and in its original packaging.
Return procedure for STB170NF04:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STB170NF04 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
