STMicroelectronics STB17N80K5

Overview

STB17N80K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 vertical structure technology, delivering 800 V V_(BR)DSS, 290 mΩ typ. R_DS(on) at V_GS = 10 V, and 14 A continuous drain current at T_C = 25 °C. It features ultra-low gate charge (26 nC), Zener-protected gate, and 100% avalanche tested for robustness in high-efficiency SMPS and industrial motor drives.

For engineers reviewing the STB17N80K5 datasheet, STB17N80K5 pinout, STB17N80K5 application, or STB17N80K5 equivalent, key selection criteria include its 800 V breakdown rating, 290 mΩ on-resistance, 26 nC total gate charge, 4.5 V/ns diode recovery dv/dt capability, and D²PAK thermal resistance of 0.74 °C/W - all critical for high-density flyback, PFC, and resonant converter designs.

Technical Context

This MOSFET employs ST's MDmesh K5 proprietary vertical silicon architecture to minimize conduction and switching losses simultaneously. Its low R_DS(on) × area and FoM (Figure of Merit) enable superior power density in space-constrained 800 V systems.

The device integrates a fast, soft-recovery body diode with 439 ns trr at 25 °C and 626 ns at 150 °C, plus 340 mJ single-pulse avalanche energy at T_J = 25 °C - enabling reliable unclamped inductive switching without external snubbers.

Key Specifications

Pinout & Package

D²PAK (TO-263) package with exposed drain tab for thermal and electrical connection; thermally optimized for surface-mount mounting on 2-oz copper PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW17N80K5, STB17N80K5 trades 0.29 °C/W higher thermal resistance for 40% smaller PCB area and automated assembly compatibility; versus IPP60R190C7, it provides 150 V higher blocking voltage and integrated gate protection at the cost of 16 nC higher gate charge.

Availability

STB17N80K5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STB17N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage superjunction MOSFET product line, engineered specifically for 700–900 V SMPS, PFC, and motor control applications demanding best-in-class R_DS(on) × Q_g FoM and avalanche ruggedness.

FAQ

What is the maximum recommended gate drive voltage for STB17N80K5?

The absolute maximum gate-source voltage is ±30 V per datasheet Table 1. For reliable long-term operation, ST recommends limiting V_GS to +10 V to +15 V during switching and avoiding sustained exposure above +20 V to prevent accelerated gate oxide degradation. The device's Zener protection activates at ~30 V but is not intended for repeated clamping.

Can STB17N80K5 replace STW17N80K5 in an existing TO-247 design?

No direct drop-in replacement is possible due to different packages: STB17N80K5 uses D²PAK (surface-mount), while STW17N80K5 uses TO-247 (through-hole). PCB layout, thermal pad design, and mechanical mounting must be redesigned. Electrical parameters are identical, but thermal resistance increases from 0.45 °C/W to 0.74 °C/W, requiring revised thermal validation.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - the body diode exhibits soft reverse recovery (Q_rr = 6.37 µC, trr = 439 ns at 25 °C) and low forward voltage (V_SD = 1.6 V at 14 A), making it viable for low-frequency synchronous rectification. However, for >200 kHz operation, an external Schottky diode or dedicated SR controller is preferred to minimize recovery-related losses.

Does STB17N80K5 require a gate resistor for safe operation?

Yes - a gate resistor (typically 4.7–22 Ω) is required to control dV/dt and di/dt during switching, suppress ringing, and limit peak gate current. The datasheet Figure 13 test circuit specifies R_G = 4.7 Ω for timing measurements; lower values increase switching speed but risk overshoot and EMI, while higher values raise switching losses.