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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB180N55F3

Name: STB180N55F3
Brand: STMicroelectronics
SKU: STB180N55F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB180N55F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB180N55F3.pdf

Description:: MOSFET N-CH 55V 120A D2PAK

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Product details

Overview

STB180N55F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D2PAK package, rated for 55V drain-source voltage, 3.5mΩ typical R_DS(on) at V_GS=10V and 60A, 120A continuous drain current (package-limited), and 330W total power dissipation at T_C=25°C. It delivers ultra-low on-resistance and rugged avalanche capability for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the STB180N55F3 datasheet, STB180N55F3 pinout, STB180N55F3 application, or STB180N55F3 equivalent, key selection criteria include its 3.5mΩ R_DS(on), 120A ID rating, 1000mJ single-pulse avalanche energy, thermal resistance of 0.45°C/W (junction-to-case), and D2PAK footprint compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs ST's STripFET™ III process with single-feature-size strip architecture, enabling high cell density and low gate charge (Q_g=100nC). Its design targets high-current switching where conduction loss minimization and robust unclamped inductive switching performance are critical.

The device features fully characterized dynamic parameters including C_iss=6800pF, C_oss=1450pF, and fast switching times (t_d(on)=25ns, t_f=50ns) under 4.7Ω gate drive, supporting operation up to several hundred kHz in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48V bus applications.
R_DS(on)	3.5mΩ @ V_GS=10V, I_D=60A - Directly determines I²R conduction loss; enables <1.3W loss at 60A.
I_D (cont)	120A @ T_C=25°C - Package-limited current capacity; requires heatsinking for sustained operation above ~60°C case temperature.
E_AS	1000mJ - Single-pulse avalanche energy at T_j=25°C; supports reliable unclamped inductive turn-off in motor control.
Q_g	100nC - Total gate charge; sets minimum gate driver current requirement (~20mA avg for 500ns switching).
R_thj-case	0.45°C/W - Junction-to-case thermal resistance; enables ~73°C temperature rise per 100W dissipated with direct heatsink mounting.
dv/dt	11V/ns - Peak diode recovery voltage slope rating; constrains layout parasitics to avoid spurious turn-on during commutation.

Pinout & Package

STB180N55F3 uses the D2PAK (TO-263) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The drain is connected to the exposed metal tab for thermal and electrical connection to the PCB heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2	Drain (D)	High-current output node; electrically and thermally coupled to PCB copper pour via soldered tab.
Pin 1	Gate (G)	Control input; requires 10V drive for full enhancement; sensitive to ESD (±20V max rating).
Pin 3	Source (S)	Power return path; referenced to ground in low-side switch configuration; carries full load current.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.5mΩ enables <1.3W conduction loss at 60A, reducing thermal stress in high-current 48V systems.
100% avalanche tested	Guarantees minimum 1000mJ single-pulse energy handling-critical for reliability in motor drive freewheeling paths.
Low gate charge (Q_g)	100nC allows efficient driving with standard gate drivers (e.g., STGW30V60DF) without excessive power loss.
STripFET™ III process	Single-feature-size strip architecture improves manufacturing reproducibility and reduces parameter spread across lots.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 environmental requirements.

Applications

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: 48V-to-12V synchronous buck converter in telecom power supply.

IC Role / Device Role / Timing Role: High-side power switch operating at 200kHz with forced PWM mode.

Use Value: 3.5mΩ R_DS(on) limits conduction loss to 1.26W at 60A, enabling >95% efficiency at full load without active cooling.

Use Scenario: 48V brushed motor drive in industrial actuator with H-bridge topology.

IC Role / Device Role / Timing Role: High-current quadrant 1/3 switch controlling direction and torque via PWM.

Use Value: 1000mJ avalanche rating absorbs inductive kickback during PWM off-time, eliminating need for external snubbers.

Server PSU OR-ing FET

UPS Inverter Output Stage

Use Scenario: Hot-swap OR-ing function in redundant 48V server power distribution.

IC Role / Device Role / Timing Role: Low-loss reverse-blocking switch replacing Schottky diodes.

Use Value: 3.5mΩ on-resistance cuts forward voltage drop to ~210mV at 60A-reducing heat by >70% vs. 0.4V diode solution.

Use Scenario: 55V-class UPS inverter output stage delivering 120A peak to battery backup loads.

IC Role / Device Role / Timing Role: Half-bridge leg switch handling bidirectional current and high dv/dt transitions.

Use Value: 11V/ns dv/dt rating and low Crss (15pF) suppress Miller-induced false turn-on in high-speed bridge operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP180N55F3	TO-220 package; higher R_DS(on) = 3.8mΩ; same V_DSS/I_D ratings.	Through-hole mounting; lower thermal performance (R_thj-case = 0.45°C/W same, but ambient-limited due to TO-220 geometry).	Select when legacy through-hole assembly or manual prototyping is required; not suitable for high-density SMT designs.
IRFB4115PBF	55V, 3.2mΩ, 110A, TO-220; lower Q_g = 85nC; no avalanche rating specified.	Lacks guaranteed avalanche energy spec; optimized for faster switching rather than ruggedness.	Prefer for high-frequency SMPS where switching loss dominates; avoid in motor control or unclamped inductive loads.

Compared with STP180N55F3 and IRFB4115PBF, STB180N55F3 offers superior thermal interface via D2PAK tab, guaranteed avalanche ruggedness for motor freewheeling, and tighter R_DS(on) tolerance than the IR part-making it optimal for space-constrained, high-reliability 48V industrial power stages.

Availability

STB180N55F3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, UPS inverters, and OR-ing circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for STB180N55F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

STB180N55F3 belongs to the STripFET™ III family, engineered specifically for high-current, high-efficiency power conversion in 48V infrastructure applications-including telecom rectifiers, server PSUs, and industrial motor controllers.

FAQ

What is the maximum continuous drain current for STB180N55F3?

The STB180N55F3 is rated for 120A continuous drain current at case temperature T_C = 25°C. This rating is limited by wire bonding capacity-not silicon capability-and derates linearly with increasing case temperature using the 2.2W/°C derating factor beyond 25°C.

Does STB180N55F3 support avalanche operation in circuit design?

Yes-STB180N55F3 is 100% avalanche tested with a guaranteed single-pulse avalanche energy (E_AS) of 1000mJ at T_j = 25°C. This enables safe operation during unclamped inductive switching events common in motor drive and relay driving applications.

What is the gate threshold voltage range for reliable turn-on?

The gate threshold voltage (V_GS(th)) is specified from 2V to 4V at I_D = 250µA. For full enhancement and minimal R_DS(on), a gate drive of ≥10V is required; operation between 4V–10V yields progressively higher on-resistance and increased switching losses.

Can STB180N55F3 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10 of the datasheet) ensures inherent current sharing when paralleled. Thermal coupling between devices must be matched, and gate drive impedance should be balanced to minimize dynamic imbalance during switching.

STB180N55F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB180N55F3 FAQ

1.How can I place an order for STB180N55F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB180N55F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB180N55F3 reliable?

The price and inventory of STB180N55F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB180N55F3 is usually 5 days.

3.What payment methods are accepted for STB180N55F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB180N55F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB180N55F3?

STB180N55F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB180N55F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB180N55F3?

For technical support, including STB180N55F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB180N55F3 requirements.

6.How does Aetrix verify that STB180N55F3 is sourced from the original manufacturer or authorized distributors?

All STB180N55F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB180N55F3 meets industry standards.

7.What is the process for return or replacement of STB180N55F3?

All STB180N55F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB180N55F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB180N55F3 part is unused and in its original packaging.

Return procedure for STB180N55F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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