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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB18N55M5

Name: STB18N55M5
Brand: STMicroelectronics
SKU: STB18N55M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB18N55M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB18N55M5.pdf

Description:: MOSFET N-CH 550V 16A D2PAK

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Product details

Overview

STB18N55M5 from STMicroelectronics is an N-channel 550 V, 16 A MDmesh™ V Power MOSFET in D²PAK (TO-263) package, featuring 0.150 Ω typ. R_DS(on), 100% avalanche tested, and optimized for high-voltage switching in offline SMPS and PFC stages.

For engineers reviewing the STB18N55M5 datasheet, STB18N55M5 pinout, STB18N55M5 application, or STB18N55M5 equivalent, this device is selected for high-efficiency 550 V primary-side switching where low conduction loss, fast dv/dt immunity, and rugged unclamped inductive switching capability are critical.

Technical Context

This MOSFET employs ST's MDmesh™ V vertical silicon process combined with PowerMESH™ horizontal layout to achieve ultra-low R_DS(on) × Q_g figure-of-merit (0.150 Ω × 31 nC), enabling high-frequency operation up to 100 kHz in hard-switched topologies.

It delivers 210 mJ single-pulse avalanche energy (E_AS) at T_j = 25 °C, supports 15 V/ns peak diode recovery dv/dt, and maintains stable gate threshold (V_GS(th) = 3–5 V) across –50 °C to 150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	550 V - Withstands full 400 V DC bus + transient overshoot in universal-input offline converters
R_DS(on) typ.	0.150 Ω - Enables ≤2.4 W conduction loss at 16 A continuous drain current (T_C = 25 °C)
Q_g	31 nC - Low gate charge reduces driver power requirement and enables use of cost-effective 1-A gate drivers
E_AS	210 mJ - Guarantees robustness against unclamped inductive switching events without external snubbers
dv/dt rating	15 V/ns - Immune to false turn-on during fast voltage transients in high-noise industrial motor drives
T_j max	150 °C - Supports extended thermal margin in sealed enclosures with limited airflow
C_iss	1260 pF - Predictable input capacitance simplifies gate drive loop stability analysis

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration with standard JEDEC footprint (9.35 mm × 10.40 mm × 4.60 mm height).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power source terminal	Low-impedance return path for load current; connects directly to PCB ground plane for EMI control
2 (Gate)	Control input	High-impedance MOS gate requiring <2.8 Ω intrinsic resistance; sensitive to layout-induced ringing
3 (Drain / Tab)	High-voltage power input	Exposed metal tab is electrically connected to drain; must be isolated from heatsink unless using insulating pad

Key Features

Feature	Design Value
MDmesh™ V silicon technology	Delivers industry-leading R_DS(on) × area efficiency for 550 V class, reducing die size by ~30% vs. prior-generation MDmesh™ IV
100% avalanche tested	Every unit validated to withstand 210 mJ single-pulse avalanche stress-no screening failures permitted
High dv/dt immunity	15 V/ns rating ensures reliable operation in fast-switching flyback and LLC resonant converters without gate clamping
Low Q_gd/Q_g ratio	14.2 nC / 31 nC = 0.46 - Minimizes Miller plateau duration, improving switching controllability under high dV/dt
Enhanced body diode performance	244 ns trr and 2.8 µC Q_rr at 100 V - Reduces reverse recovery losses in quasi-resonant and ZVS topologies

Applications

Server PSU Primary Switch

Industrial AC-DC Adapter

Use Scenario: 1 kW server power supply operating at 100 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward topology handling 550 V DC bus.

Use Value: 0.150 Ω R_DS(on) cuts conduction loss by 1.8 W vs. legacy 0.22 Ω devices, improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: 300 W industrial programmable logic controller (PLC) power module with wide ambient temperature range (–40 °C to +70 °C).

IC Role / Device Role / Timing Role: Main switch in discontinuous conduction mode (DCM) flyback converter.

Use Value: 150 °C max junction temperature and 15 V/ns dv/dt rating ensure stable operation during line surges and cold-start conditions without derating.

PFC Boost Stage

Motor Drive Inverter Leg

Use Scenario: Two-phase interleaved boost PFC stage in telecom rectifier (3.3 kW, 400 V output).

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost cell.

Use Value: Low C_oss (42 pF) and Co(er) (35 pF) minimize turn-off loss, enabling >98.2% PFC efficiency at 50 kHz switching frequency.

Use Scenario: Half-bridge leg in 7.5 kW HVAC inverter driving permanent magnet synchronous motor (PMSM).

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive inductive turn-off stress and body diode commutation.

Use Value: 210 mJ E_AS and 244 ns trr reduce need for external freewheeling diodes and snubbers, lowering BOM count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N55M5	Same silicon die, TO-220 through-hole package; R_thj-case = 1.14 °C/W vs. 1.14 °C/W for STB18N55M5 (D²PAK)	Preferred for prototyping, lower-volume production, or designs requiring mechanical mounting via screw	Select when thermal interface to heatsink is more controllable via bolt-down than soldered D²PAK tab
IPP60R190C7	600 V CoolMOS™ C7; R_DS(on) = 0.190 Ω; Q_g = 29 nC; no avalanche rating specified	Suitable for higher-frequency (>150 kHz) resonant converters where avalanche ruggedness is secondary	Choose only if design includes full overvoltage protection and avoids unclamped inductive loads

Compared with STP18N55M5, STB18N55M5 offers identical electrical specs but superior thermal cycling reliability and automated assembly compatibility; versus IPP60R190C7, it trades slightly higher R_DS(on) for guaranteed avalanche survival and broader safe operating area at high V_DS.

Availability

STB18N55M5 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and PFC boost stages requiring stable component supply with long-term manufacturing continuity.

Supply support for STB18N55M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to the MDmesh™ V Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 500–650 V switching applications in offline power conversion and motor control systems.

FAQ

What is the maximum continuous drain current (I_D) at case temperature 100 °C?

The STB18N55M5 supports 10 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures, and must be verified against actual PCB copper area and heatsink performance in the target layout.

Does STB18N55M5 require a gate resistor for stable switching?

Yes-a minimum gate resistor of 4.7 Ω is recommended per Figure 19 test circuit to dampen ringing and prevent parasitic oscillation, especially given its 2.8 Ω intrinsic gate resistance and 1260 pF C_iss. Values below 2.2 Ω risk shoot-through in half-bridge configurations due to insufficient Miller effect control.

Can STB18N55M5 replace STP18N55M5 in existing TO-220 layouts?

No direct replacement is possible without PCB redesign: STB18N55M5 uses D²PAK (TO-263) surface-mount footprint, while STP18N55M5 uses TO-220 through-hole. The D²PAK has different thermal pad geometry, lead pitch (2.54 mm vs. 2.54 mm but offset), and requires reflow-compatible thermal interface design.

Is the body diode suitable for synchronous rectification?

No-the body diode has 244 ns reverse recovery time and 2.8 µC Q_rr, making it unsuitable for synchronous rectification above ~50 kHz. It is designed for freewheeling and clamping roles only; external Schottky or SiC diodes are required for high-frequency rectification.

STB18N55M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 192mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1260 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB18N55M5 FAQ

1.How can I place an order for STB18N55M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB18N55M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB18N55M5 reliable?

The price and inventory of STB18N55M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18N55M5 is usually 5 days.

3.What payment methods are accepted for STB18N55M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18N55M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB18N55M5?

STB18N55M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB18N55M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB18N55M5?

For technical support, including STB18N55M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18N55M5 requirements.

6.How does Aetrix verify that STB18N55M5 is sourced from the original manufacturer or authorized distributors?

All STB18N55M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18N55M5 meets industry standards.

7.What is the process for return or replacement of STB18N55M5?

All STB18N55M5 units undergo pre-shipment inspection (PSI). If there is an issue with STB18N55M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB18N55M5 part is unused and in its original packaging.

Return procedure for STB18N55M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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