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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB18N60DM2

Name: STB18N60DM2
Brand: STMicroelectronics
SKU: STB18N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB18N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB18N60DM2.pdf

Description:: MOSFET N-CH 600V 12A D2PAK

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Product details

Overview

STB18N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in D²PAK (TO-263) package, featuring 600 V V_BRDSS, 0.260 Ω typ. R_DS(on), 12 A continuous drain current, fast-recovery body diode (t_rr = 125 ns @ T_j = 25 °C), and 20 nC total gate charge - optimized for ZVS phase-shift and bridge-topology SMPS.

For engineers reviewing the STB18N60DM2 datasheet, STB18N60DM2 pinout, STB18N60DM2 application, or STB18N60DM2 equivalent, key selection criteria include avalanche ruggedness (380 mJ single-pulse), dv/dt immunity (50 V/ns), low Q_rr (0.675 nC), thermal resistance (1.39 °C/W j-case), and MDMesh™ DM2 process advantages in high-efficiency HV converters.

Technical Context

This device implements ST's MDMesh™ DM2 silicon architecture, integrating a fast-recovery intrinsic body diode with ultra-low Q_rr (0.675 nC) and t_rr (125 ns) to minimize switching losses in hard- and soft-switching topologies. Its 50 V/ns MOSFET dv/dt ruggedness and 40 V/ns diode recovery dv/dt rating ensure robust operation under fast transient conditions.

The 800 pF C_iss, 5.6 Ω R_G, and 20 nC Q_g enable precise gate drive control with reduced EMI generation, while the 1.39 °C/W R_th(j-case) supports high-power density designs when mounted on standard FR-4 PCBs with adequate copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	600 V - supports primary-side switching in 400 V AC-input offline SMPS without derating
R_DS(on) max	0.295 Ω - limits conduction loss to ≤ 42.5 W at 12 A DC, enabling compact heatsink design
Q_g	20 nC - reduces gate drive power requirement and enables use of lower-cost drivers
t_rr	125 ns @ 25 °C - minimizes commutation loss and voltage overshoot in bridge-leg transitions
R_th(j-case)	1.39 °C/W - allows 90 W dissipation at ≤ 25 °C case temperature rise above ambient
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate switching events
Q_rr	0.675 nC @ 25 °C - cuts reverse recovery energy by >70% vs standard superjunction MOSFETs

Pinout & Package

D²PAK (TO-263) package: surface-mount, single-ended heat sink interface via exposed drain tab; 3-terminal configuration with standardized footprint per Figure 20 (ST DocID027677 Rev 2, p.11).

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power output / heat sink interface	Electrically connected to drain; requires isolation from PCB ground plane unless referenced to system high-side potential
G (Gate)	Control input	High-impedance MOS gate; driven with 10 V logic-level signal; sensitive to ESD and ringing
S (Source)	Power return / reference node	Common source node for current sensing and gate drive return; must be low-inductance path to minimize switching noise

Key Features

Feature	Design Value
MDMesh™ DM2 silicon process	Enables simultaneous optimization of R_DS(on), Q_g, and Q_rr - not achievable with conventional superjunction architectures
100% avalanche tested	Guarantees single-pulse avalanche capability up to 380 mJ, eliminating need for external snubbers in inductive load circuits
Zener-protected gate	Integrates gate oxide protection against ±25 V transients - eliminates external gate clamp diodes in most applications
Extremely low C_iss and Q_g	800 pF C_iss and 20 nC Q_g reduce driver stress and improve efficiency in >100 kHz switching converters

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-density 3 kW server power supply operating in asymmetric half-bridge topology with 100–500 kHz switching frequency.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full DC bus voltage (400–450 V) and delivering regulated +12 V output.

Use Value: Low Q_rr (0.675 nC) and fast t_rr (125 ns) suppress shoot-through risk and reduce dead-time losses by ≥18% vs legacy superjunction devices.

Use Scenario: 7.5 kW variable-frequency drive for HVAC compressors using three-phase IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: Low-side switching element in leg configuration, conducting motor phase current with bidirectional freewheeling capability.

Use Value: Fast-recovery body diode eliminates need for discrete antiparallel SiC Schottky diodes, reducing BOM count and layout area by 35%.

Telecom Rectifier Module

EV Onboard Charger PFC Stage

Use Scenario: 3.3 kW telecom rectifier with active clamp forward topology and 200 kHz switching frequency.

IC Role / Device Role / Timing Role: Clamp switch managing energy recycling from transformer leakage inductance during reset phase.

Use Value: 50 V/ns dv/dt ruggedness ensures reliable operation despite steep voltage transitions across clamp capacitor, avoiding false triggering.

Use Scenario: Two-phase interleaved boost PFC stage in 6.6 kW EV onboard charger, operating at 65–130 kHz.

IC Role / Device Role / Timing Role: High-voltage boost switch handling 800 V DC link and delivering sinusoidal line current with <5% THD.

Use Value: 0.260 Ω R_DS(on) at 100 °C maintains conduction loss below 1.8 W per phase, supporting >98.2% PFC efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW18N60DM2	Same die, TO-247 package - higher R_th(j-case) (0.85 °C/W), no integrated heat sink tab	Better suited for forced-air-cooled industrial inverters where mechanical mounting flexibility outweighs PCB space constraints	Select when thermal interface to external heatsink is preferred over PCB copper cooling
IPP60R190C7	Infineon CoolMOS™ C7 - 190 mΩ R_DS(on), 22 nC Q_g, but Q_rr = 1.1 nC (≈65% higher)	Higher conduction efficiency at light loads but increased diode recovery loss in ZVS bridges	Prefer for DCM/CRM PFC where low R_DS(on) dominates; avoid in phase-shift full-bridge where Q_rr is critical

Compared with STW18N60DM2 and IPP60R190C7, STB18N60DM2 delivers optimal balance of low Q_rr, high dv/dt immunity, and PCB-integrated thermal performance - making it the preferred choice for space-constrained, high-frequency bridge converters requiring zero-voltage switching reliability.

Availability

STB18N60DM2 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STB18N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDMesh™ DM2 product line targets high-efficiency, high-voltage power conversion systems - specifically engineered to replace older superjunction MOSFETs in ZVS, phase-shift, and resonant topologies where diode recovery performance is critical.

FAQ

What is the maximum recommended gate drive voltage for STB18N60DM2?

The absolute maximum gate-source voltage is ±25 V, but ST recommends limiting V_GS to 10 V for reliable R_DS(on) performance and long-term gate oxide integrity. Driving above 12 V yields diminishing R_DS(on) improvement while increasing risk of gate stress during transients.

Can STB18N60DM2 replace STP18N60DM2 in existing designs?

Yes - STB18N60DM2 and STP18N60DM2 share identical electrical specifications and die, differing only in package (D²PAK vs TO-220). Thermal impedance increases from 1.39 °C/W (D²PAK) to 2.5 °C/W (TO-220), so PCB copper area must be verified for equivalent thermal performance.

Is the body diode suitable for continuous bidirectional conduction in synchronous rectification?

No - although fast (t_rr = 125 ns), the body diode is not rated for sustained reverse recovery duty cycles above 10% in synchronous rectifier mode. It is optimized for clamping and freewheeling in bridge legs, not unidirectional rectification.

Does STB18N60DM2 require external gate resistors for EMI control?

Yes - a 4.7 Ω series gate resistor is specified in the datasheet for switching time characterization (td(on)/td(off)). Omitting it risks excessive dV/dt-induced oscillation and EMI emissions; values between 3.3 Ω and 10 Ω are typical for balancing speed and noise suppression.

STB18N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 295mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB18N60DM2 FAQ

1.How can I place an order for STB18N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB18N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB18N60DM2 reliable?

The price and inventory of STB18N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18N60DM2 is usually 5 days.

3.What payment methods are accepted for STB18N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB18N60DM2?

STB18N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB18N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB18N60DM2?

For technical support, including STB18N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18N60DM2 requirements.

6.How does Aetrix verify that STB18N60DM2 is sourced from the original manufacturer or authorized distributors?

All STB18N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18N60DM2 meets industry standards.

7.What is the process for return or replacement of STB18N60DM2?

All STB18N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STB18N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB18N60DM2 part is unused and in its original packaging.

Return procedure for STB18N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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