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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB18N60M2

Name: STB18N60M2
Brand: STMicroelectronics
SKU: STB18N60M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB18N60M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB18N60M2.pdf

Description:: MOSFET N-CH 600V 13A D2PAK

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Product details

Overview

STB18N60M2 from STMicroelectronics is an N-channel 600 V, 255 mΩ (typ.) MDmesh™ M2 Power MOSFET in TO-220 package, rated for 13 A continuous drain current at 25 °C and featuring 21.5 nC total gate charge, 40 pF output capacitance, and 100% avalanche tested ruggedness. It delivers low conduction loss and optimized switching performance for high-efficiency LLC resonant converters and hard-switched SMPS.

For engineers reviewing the STB18N60M2 datasheet, STB18N60M2 pinout, STB18N60M2 application, or STB18N60M2 equivalent, key selection criteria include its 1.14 °C/W junction-to-case thermal resistance, 135 mJ single-pulse avalanche energy, Zener-protected gate, and dv/dt ruggedness of 50 V/ns under MOSFET switching conditions.

Technical Context

This device employs ST's MDmesh M2 strip layout and enhanced vertical structure to achieve low R_DS(on) while maintaining excellent C_oss linearity and reduced gate charge-critical for minimizing switching losses in high-frequency resonant topologies. Its Zener-protected gate ensures robust ESD immunity without external clamping.

The MOSFET supports unclamped inductive switching with 3 A repetitive avalanche current and exhibits stable V_(BR)DSS (600 V min.) across -75 °C to 150 °C, validated by normalized breakdown voltage curves. Its 1.6 V source-drain forward voltage at 13 A enables efficient synchronous rectification in secondary-side applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 480 V in hard-switched converters with margin for transients.
R_DS(on) max	280 mΩ at V_GS = 10 V, I_D = 6.5 A - Enables <1.8 W conduction loss at 13 A, reducing heatsink requirements.
Q_g	21.5 nC - Low gate drive power demand supports operation with standard gate drivers at >200 kHz.
C_oss	40 pF - Minimizes capacitive turn-off loss and improves zero-voltage switching (ZVS) initiation in LLC designs.
E_AS	135 mJ - Confirmed single-pulse avalanche capability allows reliable operation during overvoltage events without snubbers.
R_thJC	1.14 °C/W - Enables direct mounting to heatsinks for thermal management in 110 W continuous power dissipation scenarios.
dv/dt ruggedness	50 V/ns - Sustains fast voltage transitions in high-dV/dt environments without spurious turn-on.

Pinout & Package

Package: TO-220 type A (tab-connected to drain), RoHS-compliant ECOPACK® grade, with slug flatness ≤0.10 mm and 15.25–15.75 mm body length.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-side power switch node	Electrically connected to drain; serves as primary heat path to heatsink and must be isolated from other potentials.
G (Pin 1)	Gate control terminal	Receives 10 V logic-level drive; Zener protection limits gate-source voltage to ±25 V, preventing oxide damage.
S (Pin 3)	Source return path	Reference node for gate drive and current sensing; carries full load current and forms common return for internal body diode.

Key Features

Feature	Design Value
Extremely low gate charge	21.5 nC total charge reduces driver IC power consumption and simplifies gate drive loop design.
Optimized C_oss profile	40 pF typical output capacitance with linear voltage dependence enables predictable ZVS timing in resonant converters.
100% avalanche tested	Each unit validated for 135 mJ single-pulse energy, eliminating need for external avalanche protection circuits.
Zener-protected gate	Integrated gate-source Zener clamps transient overvoltage, enabling robust operation without external TVS diodes.
MDmesh M2 technology	Strip-based silicon architecture achieves 255 mΩ typ. R_DS(on) at 600 V rating, balancing conduction and switching loss.

Applications

LLC Resonant Converter Primary Switch

Industrial AC-DC Front-End

Use Scenario: High-efficiency server PSU operating at 300–500 kHz with soft-switching requirements.

IC Role / Device Role / Timing Role: Main high-side switching element in half-bridge LLC topology, conducting during ZVS intervals.

Use Value: Low C_oss (40 pF) and 21.5 nC Q_g enable reliable ZVS down to light loads, improving efficiency above 95%.

Use Scenario: 1 kW industrial power supply with universal AC input and active PFC + LLC stage.

IC Role / Device Role / Timing Role: Primary-side switch in PFC boost stage handling 13 A peak current at 100 kHz.

Use Value: 1.14 °C/W R_thJC and 110 W P_TOT support forced-air cooling without oversized heatsinks.

UPS Inverter Stage

Motor Drive Half-Bridge

Use Scenario: Online double-conversion UPS with 400 V DC bus and 50/60 Hz output inversion.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg, subjected to repetitive unclamped inductive stress.

Use Value: 135 mJ E_AS and 3 A I_AR ensure safe operation during short-circuit or overload recovery without failure.

Use Scenario: 750 W BLDC motor drive with 600 V DC link and trapezoidal commutation.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter, requiring fast turn-off and dv/dt immunity.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during high di/dt commutation events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18N60M2	Identical electrical specs and TO-220 package; same MDmesh M2 die, differing only in marking and orderable part number.	No functional difference; used interchangeably in production where STP18N60M2 is legacy stock.	Select STB18N60M2 for new designs requiring latest revision (Rev 5, April 2024) and documented lifecycle status.
STW18N60M2	Same die, but in TO-247 package with lower R_thJC (0.85 °C/W) and higher P_TOT (150 W); otherwise identical V_DSS, R_DS(on), Q_g.	Better thermal performance for high-power density or convection-cooled systems; requires larger footprint.	Choose STW18N60M2 when thermal headroom is constrained and board space permits TO-247 mounting.

Compared with STP18N60M2, STB18N60M2 offers identical performance in a newly segmented product line with updated documentation and lifecycle tracking, while STW18N60M2 provides superior thermal capability at the cost of larger package size and different mounting requirements.

Availability

STB18N60M2 is available at Aetrix Electronics and suitable for LLC resonant converters, industrial AC-DC front-ends, and UPS inverter stages requiring stable component supply, long-term manufacturing continuity, and automotive-grade reliability validation.

Supply support for STB18N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB18N60M2 belongs to the MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency resonant and hard-switched SMPS topologies demanding low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

Is STB18N60M2 pin-compatible with STP18N60M2?

Yes - both share identical TO-220 type A mechanical outline, pin assignment (G-S-D), and thermal pad configuration. The tab is drain-connected in both, and no PCB layout change is required when migrating between these orderable variants.

What is the maximum recommended gate resistor for 300 kHz operation?

A 4.7 Ω gate resistor is validated per datasheet test conditions (td(on)/td(off) measurements at 300 V, 6.5 A). For 300 kHz switching, this value balances turn-on speed against ringing suppression; values below 3.3 Ω may increase EMI without significant efficiency gain.

Does STB18N60M2 require external gate protection?

No - the integrated Zener protection clamps gate-source voltage to ±25 V, eliminating the need for external TVS diodes in standard gate drive configurations. External RC snubbing remains optional for high-noise environments.

Can STB18N60M2 replace older STP18N60D in existing designs?

No - STP18N60D uses MDmesh™ D1 technology with higher R_DS(on) (380 mΩ) and slower switching. Direct replacement would increase conduction loss by ~50% and degrade ZVS behavior; redesign verification is required.

STB18N60M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II Plus

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21.5 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 791 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB18N60M2 FAQ

1.How can I place an order for STB18N60M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB18N60M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB18N60M2 reliable?

The price and inventory of STB18N60M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18N60M2 is usually 5 days.

3.What payment methods are accepted for STB18N60M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18N60M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB18N60M2?

STB18N60M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB18N60M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB18N60M2?

For technical support, including STB18N60M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18N60M2 requirements.

6.How does Aetrix verify that STB18N60M2 is sourced from the original manufacturer or authorized distributors?

All STB18N60M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18N60M2 meets industry standards.

7.What is the process for return or replacement of STB18N60M2?

All STB18N60M2 units undergo pre-shipment inspection (PSI). If there is an issue with STB18N60M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB18N60M2 part is unused and in its original packaging.

Return procedure for STB18N60M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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