STMicroelectronics STB18N60M6

Overview

STB18N60M6 from STMicroelectronics is an N-channel 600 V, 13 A MDmesh M6 superjunction power MOSFET in D²PAK (TO-263) package, featuring 230 mΩ typ. R_DS(on), 16.8 nC total gate charge, and 100% avalanche tested ruggedness. It delivers low switching losses and high dv/dt ruggedness (100 V/ns) for high-efficiency LLC and boost PFC converters.

For engineers reviewing the STB18N60M6 datasheet, STB18N60M6 pinout, STB18N60M6 application, or STB18N60M6 equivalent, key selection criteria include R_DS(on) vs. temperature stability, C_oss eq. (123 pF), unclamped inductive switching robustness (E_AS = 210 mJ), and Zener-protected gate reliability under fast transient conditions.

Technical Context

This MOSFET employs ST's MDmesh M6 technology-optimized for high-voltage switching with reduced R_DS(on) per die area and enhanced dynamic performance. Its 4.6 Ω intrinsic gate resistance and low Crss (2 pF) support clean turn-off and minimal Miller-induced oscillation in hard-switched topologies.

The device integrates a Zener-protected gate structure and exhibits 15 V/ns diode recovery dv/dt capability with 208 ns trr at 25 °C and 290 ns at 150 °C, enabling reliable operation in resonant and quasi-resonant converters where body diode commutation is critical.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: thermally enhanced surface-mount outline with isolated tab (drain-connected), 3-pin configuration, and 1.14 °C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7XKSA1 and IXTH12N60L2, STB18N60M6 uniquely balances low R_DS(on), moderate Q_g, Zener gate protection, and guaranteed avalanche ruggedness-making it optimal for mission-critical PFC and resonant converter designs requiring field reliability without added protection components.

Availability

STB18N60M6 is available at Aetrix Electronics and suitable for LLC resonant converters, boost PFC front-ends, and solar microinverter DC-link switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB18N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

The MDmesh M6 product line targets high-efficiency, high-reliability power conversion in 400–800 V applications-specifically engineered to replace older superjunction MOSFETs with improved R_DS(on)/area and enhanced dynamic ruggedness.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB18N60M6 supports 8.2 A continuous drain current at T_case = 100 °C, as specified in Table 1 of DS12842. This derating reflects thermal limits imposed by its 1.14 °C/W R_thJC and 150 °C maximum junction temperature, ensuring safe operation in enclosed power supplies without forced air cooling.

Does this MOSFET require external gate protection?

No external gate protection is required-the STB18N60M6 integrates a built-in Zener diode between gate and source, rated for ±25 V_GS. This protects against ESD events and transient overvoltage during layout parasitic coupling, eliminating the need for discrete TVS or resistor-Zener networks in most industrial and telecom power designs.

How does the body diode performance compare to standard silicon MOSFETs?

The STB18N60M6 features an optimized body diode with 208 ns reverse recovery time (trr) and 1.9 µC Q_rr at 25 °C-significantly faster and lower charge than legacy 600 V MOSFETs. Its trr increases only to 290 ns at 150 °C, maintaining predictable commutation behavior in high-temperature PFC and inverter applications.

Can this device be used in place of an IGBT in a 600 V inverter bridge?

Yes-its 600 V V_DS, 13 A I_D, and 110 W power dissipation support direct IGBT replacement in 16 kHz hard-switched inverter legs. However, unlike IGBTs, it lacks tail current; designers must verify gate drive strength (≥2 A peak) and layout parasitics to avoid shoot-through during high-di/dt transitions.