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STMicroelectronics STB18NF25
- Part No.:
- STB18NF25
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB18NF25.pdf
- Description:
- MOSFET N-CH 250V 17A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,296
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Product details
Overview
STB18NF25 from STMicroelectronics is an AEC-Q101 qualified N-channel Power MOSFET in DPAK (TO-252) package, rated for 250 V VDS, 165 mΩ RDS(on) max at VGS = 10 V and 8.5 A, with 100% avalanche tested capability and exceptional dv/dt immunity up to 10 V/ns. It serves as a primary switch in isolated DC-DC converters for telecom and server power supplies where low gate charge (29.3 nC) and minimized input capacitance are critical.
For engineers reviewing the STB18NF25 datasheet, STB18NF25 pinout, STB18NF25 application, or STB18NF25 equivalent, this page delivers verified electrical ratings, thermal data, switching behavior, diode recovery metrics, and automotive-grade reliability context - all confirmed against DS6601 Rev 6 (July 2023).
Technical Context
This STripFET II device employs a planar trench-gate structure optimized for high-voltage switching efficiency, featuring low Qgd/Qgs ratio (14.4 nC / 4.5 nC) to suppress Miller-induced turn-on and enable robust operation under fast dv/dt transients. Its 1.36 °C/W RthJC supports high-power density mounting on PCBs with minimal heatsinking.
The integrated body diode exhibits 147 ns trr and 0.8 µC Qrr at 17 A/100 A/µs, enabling reliable synchronous rectification and hard-switched flyback topologies. Avalanche ruggedness is validated at 17 A IAR and 170 mJ EAS, meeting AEC-Q101 stress requirements for automotive power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Withstands full bus voltage in 200 V-class telecom and industrial SMPS designs without derating. |
| RDS(on) max | 165 mΩ at VGS = 10 V, ID = 8.5 A - Enables <1.4 W conduction loss at 12 A continuous drain current (TC = 100 °C). |
| Qg | 29.3 nC - Reduces gate drive power and enables use with low-current controllers like UC384x or STM32H7 GPIOs. |
| dv/dt immunity | 10 V/ns - Prevents false triggering during high-slew-rate switching in half-bridge or LLC resonant converters. |
| EAS | 170 mJ - Supports unclamped inductive switching events without failure in motor driver or solenoid control circuits. |
| TJ range | –55 to +175 °C - Validated for under-hood automotive applications and high-ambient industrial environments. |
| ID (TC = 100 °C) | 12 A - Defines usable continuous current when mounted on standard FR-4 with 1 inch² 2 oz copper. |
Pinout & Package
DPAK (TO-252) package with exposed drain tab for thermal and electrical connection; surface-mount footprint per FP_0068772_34; ECOPACK® compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Pin 2) | Drain (D) | Primary high-side power path; electrically and thermally connected to PCB copper pour for heat dissipation. |
| Pin 1 | Gate (G) | Control terminal requiring <29.3 nC charge; sensitive to ESD; routed away from noisy power traces. |
| Pin 3 | Source (S) | Reference node for gate drive; tied to power ground plane; carries full load current and diode reverse recovery charge. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis systems including engine control modules and ADAS actuators. |
| 100% avalanche tested | Each unit undergoes single-pulse unclamped inductive switching test at IAR = 17 A, ensuring field-reliability in overvoltage fault conditions. |
| Low Ciss (1000 pF) | Reduces gate drive losses and improves noise immunity in high-frequency (>300 kHz) ZVS/ZCS topologies. |
| High dV/dt immunity (10 V/ns) | Enables stable operation in half-bridge configurations without external snubbers or gate clamping networks. |
| Optimized body diode (Qrr = 0.8 µC) | Lowers switching losses in flyback and forward converters by reducing reverse recovery energy dissipation. |
Applications
| Telecom DC-DC Converters | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Primary switch in 48 V input, 12 V output isolated forward converter for 5G base station power distribution. IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with 50% duty cycle; handles 12 A continuous output current. Use Value: Low RDS(on) and Qg reduce conduction and switching losses, achieving >94% peak efficiency while maintaining thermal margin at 70 °C ambient. |
Use Scenario: Load switch for HVAC blower motor control in vehicle cabin climate system. IC Role / Device Role / Timing Role: N-channel high-side driver (with charge pump) managing PWM-controlled 15 A resistive-inductive load. Use Value: AEC-Q101 rating and 175 °C TJ ensure compliance with ISO 16750-4 transient testing; avalanche ruggedness absorbs inductive kickback during abrupt shutdown. |
| Industrial PLC Output Stages | Server VRM High-Side Switch |
|
Use Scenario: Solid-state relay replacement in programmable logic controller digital output module driving 24 V DC solenoids. IC Role / Device Role / Timing Role: Low-side switch interfacing with microcontroller GPIO; subjected to repetitive 68 A pulsed currents during coil de-energization. Use Value: 68 A IDM rating and 170 mJ EAS eliminate need for external freewheeling diodes or TVS clamps in compact DIN-rail enclosures. |
Use Scenario: High-side switch in multiphase buck converter supplying core voltage to Xeon Scalable processors. IC Role / Device Role / Timing Role: Synchronous rectifier in 1 MHz, 30 A/channel phase leg; commutates with sub-10 ns timing precision. Use Value: 147 ns trr and low Qrr minimize shoot-through risk and dead-time losses, improving dynamic response to CPU load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP18NF25 | TO-220 package; identical die but higher RthJA (62 °C/W vs 50 °C/W); no automotive qualification. | Suitable for lab prototypes or non-automotive industrial SMPS where heatsink space permits. | Select when mechanical mounting flexibility outweighs surface-mount assembly and AEC-Q101 compliance needs. |
| IRF640NPbF | 200 V VDS; 180 mΩ RDS(on); no avalanche rating; not AEC-Q101 qualified. | Acceptable for cost-sensitive 12 V–48 V offline adapters but unsuitable for 200+ V bus or automotive environments. | Choose only for legacy designs where VDS derating to 160 V is acceptable and automotive validation is unnecessary. |
Compared with STP18NF25 and IRF640NPbF, STB18NF25 uniquely combines DPAK surface-mount compatibility, AEC-Q101 certification, 250 V rating, and guaranteed avalanche performance - making it the sole option for space-constrained, high-reliability automotive and telecom power stages.
Availability
STB18NF25 is available at Aetrix Electronics and suitable for telecom DC-DC converters, automotive body control modules, and industrial PLC output stages requiring stable component supply across extended product lifecycles.
Supply support for STB18NF25 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.
STB18NF25 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in isolated DC-DC converters and automotive power control systems.
FAQ
Is STB18NF25 pin-compatible with STD18NF25?
Yes - STB18NF25 and STD18NF25 share identical DPAK (TO-252) pinout, electrical specifications, and thermal characteristics. The STB prefix denotes tape-and-reel packaging per DS6601 Rev 6; both parts use the same silicon die and qualify to AEC-Q101. No layout or schematic changes are required for substitution.
What is the maximum safe operating area (SOA) at TC = 100 °C?
At TC = 100 °C, the SOA limits STB18NF25 to 12 A continuous drain current (per Table 1), with pulse operation constrained by thermal runaway boundaries shown in Figure 1. For 100 µs pulses, maximum VDS is 120 V at 17 A; for 1 ms, it drops to 45 V at same current - all values confirmed in DS6601 Rev 6, page 2.
Does STB18NF25 require a gate resistor for EMI suppression?
A gate resistor of 4.7 Ω is recommended (per Figure 13 test circuit) to dampen ringing and limit peak gate current during switching. This value balances EMI reduction against increased switching losses - measured td(on)/tr/tf values (10.2 ns/16.5 ns/9.8 ns) assume RG = 4.7 Ω and confirm stable edge control without oscillation in typical PCB layouts.
Can STB18NF25 be used in synchronous rectification mode?
Yes - its body diode exhibits 147 ns trr and 0.8 µC Qrr at 17 A, enabling efficient synchronous rectification in forward and flyback converters up to 500 kHz. However, external gate control is required since STB18NF25 lacks integrated drivers or logic-level compatibility - gate must be actively driven with precise timing relative to main switch.
STB18NF25 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 165mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB18NF25 FAQ
1.How can I place an order for STB18NF25 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB18NF25 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB18NF25 reliable?
The price and inventory of STB18NF25 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18NF25 is usually 5 days.
3.What payment methods are accepted for STB18NF25?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18NF25 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB18NF25?
STB18NF25 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB18NF25 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB18NF25?
For technical support, including STB18NF25 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18NF25 requirements.
6.How does Aetrix verify that STB18NF25 is sourced from the original manufacturer or authorized distributors?
All STB18NF25 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18NF25 meets industry standards.
7.What is the process for return or replacement of STB18NF25?
All STB18NF25 units undergo pre-shipment inspection (PSI). If there is an issue with STB18NF25, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB18NF25 part is unused and in its original packaging.
Return procedure for STB18NF25:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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