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STMicroelectronics STB18NF30
- Part No.:
- STB18NF30
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
STB18NF30.pdf
- Description:
- MOSFET N-CH 330V 18A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:966
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Product details
Overview
STB18NF30 from STMicroelectronics is an AEC-Q101 qualified N-channel Power MOSFET in D²PAK (TO-263) package, rated for 330 V drain-source voltage, 180 mΩ max RDS(on) at VGS = 10 V, and 18 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, exceptional dv/dt capability (10 V/ns), and low gate charge (44 nC), making it suitable as a primary switch in isolated DC-DC converters for telecom infrastructure.
For engineers reviewing the STB18NF30 datasheet, STB18NF30 pinout, STB18NF30 application, or STB18NF30 equivalent, key selection criteria include its 175 °C maximum junction temperature, 1 Ω/W junction-to-case thermal resistance, 14 A repetitive avalanche current, and STripFET II process–enabled low input capacitance - critical for high-efficiency, high-reliability switching designs in automotive and industrial power systems.
Technical Context
This device employs ST's STripFET II process to minimize Ciss (1650 pF typ.) and Qg (44 nC), enabling fast switching with reduced drive loss. Its rugged construction supports unclamped inductive switching with 200 mJ single-pulse avalanche energy and 10 V/ns diode recovery dv/dt rating under defined conditions (ISD ≤ 18 A, di/dt ≤ 200 A/μs).
The MOSFET operates across –55 °C to 175 °C junction temperature range and delivers stable VGS(th) (2–4 V) and RDS(on) (160–180 mΩ) over temperature. Its integrated body diode exhibits 1.5 V forward voltage at 18 A and 180–400 ns reverse recovery time, supporting synchronous rectification and flyback topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 330 V - Withstands up to 330 V drain-source blocking voltage, suitable for 264 V AC line-derived DC bus applications. |
| RDS(on) max | 180 mΩ at VGS = 10 V, ID = 9 A - Limits conduction loss to ≤3.24 W at 18 A, enabling compact thermal design. |
| ID cont | 18 A at TC = 25 °C - Supports high-current primary-side switching in offline SMPS without forced air cooling. |
| Qg | 44 nC - Reduces gate drive power requirement and enables use with low-power controllers or integrated drivers. |
| TJ max | 175 °C - Enables operation in under-hood automotive environments and sealed industrial enclosures. |
| EAS | 200 mJ - Provides robustness against transient overloads and inductive kickback without external snubbers. |
| RthJC | 1 °C/W - Allows direct heatsink mounting for efficient thermal transfer; 150 W PTOT achievable with minimal ΔT. |
Pinout & Package
Package: D²PAK (TO-263) - surface-mount, thermally enhanced outline with exposed drain tab for low-inductance, high-current PCB routing and direct heatsink attachment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V logic-level drive; low input capacitance (Ciss = 1650 pF) minimizes Miller effect. |
| 2 (D / TAB) | Drain / Exposed Pad | Main high-voltage current path; electrically connected to metal tab - must be isolated from heatsink unless referenced to drain potential. |
| 3 (S) | Source | Return path for load current; referenced to control ground; used for current sensing and feedback in source-switched configurations. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and temperature cycling. |
| 100% avalanche tested | Each unit undergoes unclamped inductive switching test to ensure guaranteed energy handling (EAS ≥ 200 mJ) without parameter shift. |
| Exceptional dv/dt immunity | Rated 10 V/ns - suppresses false turn-on during fast voltage transients in high-side switching or half-bridge configurations. |
| Low gate charge (Qg) | 44 nC total charge - reduces switching losses and gate driver stress, enabling >100 kHz operation with standard CMOS drivers. |
| STripFET II process | Optimized cell layout yielding 160 mΩ typ. RDS(on) and 30 pF Crss - improves efficiency and EMI performance in hard-switched topologies. |
Applications
| Telecom DC-DC Converters | Automotive On-Board Chargers |
|---|---|
|
Use Scenario: Primary-side switch in 3.3 kW isolated LLC resonant converter for 48 V–800 V bidirectional OBC. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element operating at 150–300 kHz with zero-voltage switching. Use Value: 175 °C TJ rating and 1 Ω/W RthJC enable sustained full-load operation in confined under-dash space without derating. |
Use Scenario: High-side switch in 400 V battery disconnect unit with active short-circuit protection. IC Role / Device Role / Timing Role: Fault-tolerant power switch performing rapid current interruption during overcurrent events. Use Value: 10 V/ns dv/dt capability prevents spurious turn-on during fault-induced voltage spikes; 14 A IAR supports repeated short-circuit clearing. |
| Industrial Motor Drives | Server PSU Primary Switch |
|
Use Scenario: Inverter leg switch in 7.5 kW servo drive feeding PMSM motors with regenerative braking. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 20 kHz PWM inverter stage with integrated freewheeling diode. Use Value: 1.5 V VSD and 180 ns trr reduce conduction and recovery losses during regeneration, improving system efficiency by ~1.2%. |
Use Scenario: Active clamp forward or flyback switch in 1.5 kW server front-end PSU with universal AC input. IC Role / Device Role / Timing Role: Main power switch handling 330 V DC link voltage with tight duty-cycle control. Use Value: 330 V VDS provides 20% margin over 264 V AC peak, eliminating need for voltage clamping circuits and reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW18NK30Z | Same VDS (330 V), but Zener-protected gate (±25 V), higher RDS(on) (220 mΩ), and larger TO-247 package. | Preferred where gate overvoltage risk exists (e.g., long trace layouts); less suitable for space-constrained SMT designs. | Select when gate robustness outweighs board area and thermal resistance constraints. |
| IXFH18N30P | 300 V VDS, lower RDS(on) (150 mΩ), no AEC-Q101 qualification, different gate threshold (3–5 V). | Not approved for automotive use; requires gate drive redesign due to higher VGS(th) and lack of dv/dt rating. | Consider only for non-automotive industrial applications where 30 V lower blocking voltage is acceptable. |
Compared with STW18NK30Z and IXFH18N30P, STB18NF30 uniquely combines AEC-Q101 compliance, D²PAK SMT compatibility, and verified 10 V/ns dv/dt immunity - making it the only option qualified for automotive-grade, high-density, high-reliability primary switching without package or qualification trade-offs.
Availability
STB18NF30 is available at Aetrix Electronics and suitable for telecom power supplies, automotive on-board chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101 assurance.
Supply support for STB18NF30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
The STB18NF30 belongs to ST's STripFET II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive and industrial power conversion systems where ruggedness, thermal performance, and qualification integrity are mandatory.
FAQ
Is STB18NF30 suitable for synchronous rectification?
No - STB18NF30 is optimized as a high-side or primary-side switch, not a low-side synchronous rectifier. Its body diode has 1.5 V forward voltage and 180–400 ns reverse recovery time, which is too slow and lossy for efficient secondary-side rectification. For synchronous rectification, ST recommends dedicated low-VF, low-Qrr MOSFETs like STL10DN10LH6.
What is the maximum recommended gate resistor for hard-switched operation?
For reliable 100–200 kHz hard-switched operation with minimal overshoot, ST specifies RG ≤ 4.7 Ω (as used in Figure 12 test circuit). Higher values (>10 Ω) increase switching times (e.g., td(off) rises from 145 ns to >300 ns), raising losses and thermal stress - especially critical given its 150 W PTOT limit.
Does STB18NF30 require a negative gate turn-off voltage?
No - STB18NF30 has a gate threshold voltage of 2–4 V and is fully enhanced at VGS = 10 V. Negative turn-off voltage is unnecessary and not specified in the datasheet. Standard 0 V to 10 V gate drive suffices; applying negative voltage offers no reliability or performance benefit and risks exceeding ±20 V VGS absolute maximum rating.
Can STB18NF30 be paralleled for higher current handling?
Yes - its positive temperature coefficient of RDS(on) (see Figure 10) ensures inherent current sharing. However, strict layout symmetry (matched gate and source inductance), individual gate resistors (≤4.7 Ω), and thermal coupling via shared heatsink are required. Derating to ≤14 A per device is recommended for sustained parallel operation above 100 kHz.
STB18NF30 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™ II
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 330 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1650 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
STB18NF30 FAQ
1.How can I place an order for STB18NF30 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB18NF30 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB18NF30 reliable?
The price and inventory of STB18NF30 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18NF30 is usually 5 days.
3.What payment methods are accepted for STB18NF30?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18NF30 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB18NF30?
STB18NF30 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB18NF30 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB18NF30?
For technical support, including STB18NF30 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18NF30 requirements.
6.How does Aetrix verify that STB18NF30 is sourced from the original manufacturer or authorized distributors?
All STB18NF30 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18NF30 meets industry standards.
7.What is the process for return or replacement of STB18NF30?
All STB18NF30 units undergo pre-shipment inspection (PSI). If there is an issue with STB18NF30, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB18NF30 part is unused and in its original packaging.
Return procedure for STB18NF30:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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