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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB18NM60N

Name: STB18NM60N
Brand: STMicroelectronics
SKU: STB18NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB18NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB18NM60N.pdf

Description:: MOSFET N-CH 600V 13A D2PAK

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Product details

Overview

STB18NM60N from STMicroelectronics is an N-channel 600 V, 260 mΩ typ. (285 mΩ max), 13 A Power MOSFET based on MDmesh™ II vertical strip technology, optimized for high-efficiency hard-switched and resonant converters in industrial SMPS and PFC stages. It features 100% avalanche tested ruggedness, low gate charge (35 nC), and low input capacitance (1000 pF).

For engineers reviewing the STB18NM60N datasheet, STB18NM60N pinout, STB18NM60N application, or STB18NM60N equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching capability (E_AS = 350 mJ), and thermal resistance (R_thJC = 1.14 °C/W in TO-220FP) for high-power density designs.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ architecture-combining a high-voltage vertical drift region with a fine-pitch strip layout-to achieve ultra-low R_DS(on) × Q_g figure-of-merit (≈9.1 Ω·nC). Its gate threshold voltage (2–4 V) ensures robust TTL/CMOS drive compatibility while maintaining noise immunity.

The integrated body diode delivers fast reverse recovery (t_rr = 300 ns @ T_J = 25 °C, 360 ns @ 150 °C) and low Q_rr (4.0–4.5 µC), minimizing commutation losses in bridge-leg and synchronous rectifier topologies. dv/dt ruggedness is rated at 15 V/ns under specified di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports 400 V AC input PFC and 380 V DC bus systems with ≥20% margin against transients.
R_DS(on) max	285 mΩ @ V_GS = 10 V, I_D = 6.5 A - Enables <1.8 W conduction loss at 13 A continuous drain current (T_C = 25 °C).
Q_g	35 nC - Reduces gate drive power and enables operation up to 500 kHz in ZVS/ZCS topologies without excessive driver heating.
E_AS	350 mJ - Guarantees single-pulse avalanche survivability in unclamped inductive switching (UIS), critical for motor drive fault tolerance.
t_rr	300 ns - Limits diode reverse recovery tail current, reducing shoot-through risk and EMI in half-bridge configurations.
R_thJC	1.14 °C/W (TO-220FP) - Allows 110 W dissipation at T_C = 25 °C; supports compact heatsink integration in space-constrained 1–2 kW supplies.
I_D cont	13 A @ T_C = 25 °C - Rated for continuous operation in forced-air-cooled industrial power modules up to 1.5 kW output.

Pinout & Package

STB18NM60N is offered in TO-220FP (full-pack) package with isolated tab, providing 2.5 kV RMS insulation between leads and heat sink. The package enables direct mounting to heatsinks without insulating pads while maintaining creepage/clearance compliance.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-side power switch node	Electrically connected to drain; serves as primary thermal path and high-voltage return-requires isolation when mounted to chassis.
Pin 1 (Gate)	Control terminal	Low-impedance input (R_g = 3.5 Ω) accepting 0–10 V logic-level drive; sensitive to ESD (±25 V rating).
Pin 2 (Source)	Reference node / current return	Common source connection for gate drive loop; must be routed with minimal inductance to suppress ringing during switching.
Pin 3 (Drain)	Power output node	Internally bonded to tab; carries full load current and withstands 600 V blocking-used for high-side switching in buck, flyback, and PFC.

Key Features

Feature	Design Value
MDmesh™ II vertical strip process	Delivers industry-leading R_DS(on) × Q_g trade-off (9.1 Ω·nC), enabling >96% efficiency in 1 kW LLC resonant converters.
100% UIS avalanche tested	Each unit validated for 350 mJ single-pulse energy, eliminating need for external snubbers in motor drive short-circuit protection.
Low C_iss/C_oss ratio	C_iss = 1000 pF, C_oss = 60 pF - Improves zero-voltage switching (ZVS) initiation and reduces capacitive turn-on loss in phase-shifted full-bridge.
Fast body diode with soft recovery	t_rr = 300 ns, Q_rr = 4.0 µC - Minimizes reverse recovery spikes and associated EMI in synchronous rectification and bidirectional DC-DC stages.
Isolated TO-220FP package	2.5 kV RMS insulation withstand voltage - Permits direct heatsink mounting in Class I safety designs without thermal pad derating or creepage extension.

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1.2 kW active clamp forward converter with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 100–200 kHz with hard-switched PWM control.

Use Value: Low R_DS(on) (285 mΩ) and Q_g (35 nC) reduce total switching + conduction loss to <3.2 W, enabling 95.8% peak efficiency.

Use Scenario: Boost PFC stage in 800 W telecom rectifier with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch handling 13 A peak inductor current at 65 kHz.

Use Value: Avalanche ruggedness (E_AS = 350 mJ) prevents failure during line surge events; low C_oss (60 pF) minimizes dead-time loss.

Motor Drive Inverters

Renewable Energy Converters

Use Scenario: Half-bridge leg in 3 kW BLDC inverter for HVAC compressors.

IC Role / Device Role / Timing Role: High-side switching device subjected to repetitive inductive turn-off stress and shoot-through risk.

Use Value: Fast, soft-recovery body diode (t_rr = 300 ns, Q_rr = 4.0 µC) limits reverse recovery current overshoot, reducing gate oscillation and IGBT-like cross-conduction.

Use Scenario: DC-DC isolation stage in 1.5 kW solar microinverter with 600 V PV string input.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 200 kHz with ZVS.

Use Value: Low C_oss eq. (225 pF) and high V_DS rating enable reliable ZVS across full load range, cutting switching loss by 40% vs. legacy superjunction FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP18NM60N	Same die, TO-220 package (non-isolated tab); R_thJC = 1.14 °C/W but requires insulating washer for heatsink mounting.	Lacks 2.5 kV isolation; suitable only where chassis grounding permits non-isolated mounting.	Select when cost sensitivity outweighs safety certification requirements and thermal interface complexity is acceptable.
STW18NM60N	Same die, TO-247 package; higher R_thJC = 4.17 °C/W but larger copper area supports higher transient power bursts.	Better surge handling in high-peak-current motor drives; lower C_iss due to reduced lead inductance.	Prefer for high-reliability industrial inverters requiring >100 k-cycle lifetime under repetitive UIS stress.

Compared with STP18NM60N and STW18NM60N, STB18NM60N uniquely combines TO-220FP's isolation capability with TO-220's thermal performance-making it optimal for safety-critical, space-constrained 1–2 kW AC-DC and DC-DC converters where creepage compliance and heatsink simplicity are mandatory.

Availability

STB18NM60N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and certified avalanche ruggedness.

Supply support for STB18NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

STB18NM60N belongs to the MDmesh™ II superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial and telecom infrastructure where voltage rating, ruggedness, and thermal performance are critical.

FAQ

What is the maximum continuous drain current for STB18NM60N at 100 °C case temperature?

The maximum continuous drain current is 8.2 A at T_C = 100 °C, as specified in Table 1 of DS6338 Rev 5. This rating reflects thermal derating due to junction-to-case thermal resistance (1.14 °C/W) and maximum junction temperature limit (150 °C), ensuring safe operation under sustained high-temperature conditions in enclosed power supplies.

Does STB18NM60N have an integrated body diode, and what are its key recovery characteristics?

Yes, STB18NM60N includes a monolithic source-drain body diode with typical forward voltage of 1.6 V at 13 A and reverse recovery time of 300 ns at T_J = 25 °C (360 ns at 150 °C). Its Q_rr is 4.0 µC (4.5 µC at elevated temperature), enabling low-loss commutation in bridge circuits without external diodes.

Can STB18NM60N be driven directly by a 3.3 V microcontroller GPIO pin?

No-its gate threshold voltage range is 2–4 V, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on). A 3.3 V signal yields incomplete turn-on and excessive conduction loss. A dedicated gate driver (e.g., STGAP2SICSN) or level-shifting circuit is required for reliable switching.

What is the significance of the "100% avalanche tested" specification for STB18NM60N?

Every unit undergoes production-level unclamped inductive switching (UIS) test at E_AS = 350 mJ, verifying robustness against voltage overshoot during inductive load turn-off. This eliminates field failures in motor drives and PFC circuits where transient energy exceeds normal SOA limits, reducing need for external clamping components.

STB18NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 285mOhm @ 6.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

STB18NM60N FAQ

1.How can I place an order for STB18NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STB18NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB18NM60N reliable?

The price and inventory of STB18NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB18NM60N is usually 5 days.

3.What payment methods are accepted for STB18NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB18NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB18NM60N?

STB18NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB18NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB18NM60N?

For technical support, including STB18NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB18NM60N requirements.

6.How does Aetrix verify that STB18NM60N is sourced from the original manufacturer or authorized distributors?

All STB18NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB18NM60N meets industry standards.

7.What is the process for return or replacement of STB18NM60N?

All STB18NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STB18NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB18NM60N part is unused and in its original packaging.

Return procedure for STB18NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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