STMicroelectronics STB18NM80

Overview

STB18NM80 from STMicroelectronics is an N-channel 800 V, 295 mΩ (max), 17 A Power MOSFET in D²PAK (TO-263) package, built on MDmesh™ technology for high-voltage switching in offline SMPS, PFC stages, and industrial inverters. It delivers 100% avalanche-tested ruggedness, low gate charge (70 nC), and 2.5 kV isolation rating for enhanced system reliability under transient stress.

For engineers reviewing the STB18NM80 datasheet, STB18NM80 pinout, STB18NM80 application, or STB18NM80 equivalent, key selection criteria include its 800 V V_DS, 250 mΩ typical R_DS(on), 68 A pulsed drain current, 190 W power dissipation at T_C = 25 °C, and 618 ns reverse recovery time - all critical for high-efficiency, high-reliability HVDC switching designs.

Technical Context

This device implements ST's MDmesh™ multi-drain process with PowerMESH™ horizontal layout to minimize specific on-resistance while maintaining high dv/dt immunity (>50 V/ns) and robust unclamped inductive switching capability. Its 4 A repetitive avalanche current and 600 mJ single-pulse energy rating enable operation without external snubbers in hard-switched topologies.

The gate threshold voltage (3–5 V) and low input capacitance (2070 pF) support clean turn-on with standard 10 V gate drivers, while the 4 Ω gate input resistance ensures stable high-frequency switching up to 100 kHz in continuous conduction mode PFC circuits.

Key Specifications

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab (drain), thermally enhanced for PCB heat spreading via large copper pour. Compatible with automated reflow assembly and supports >100 W thermal dissipation with 2-oz copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP18NM80, STB18NM80 offers superior thermal performance in automated production and reduced board space, while IPP60R099C7 trades voltage headroom for lower conduction loss - making STB18NM80 the sole choice for 800 V-class universal-input, high-reliability industrial power conversion.

Availability

STB18NM80 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical designs.

Supply support for STB18NM80 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STB18NM80 belongs to the MDmesh™ II family of high-voltage superjunction MOSFETs, engineered specifically for high-efficiency, high-reliability offline switching power supplies and industrial motor drives operating above 600 V DC.

FAQ

What is the maximum safe operating junction temperature for STB18NM80?

The STB18NM80 has a specified operating junction temperature range of –65 °C to +150 °C. Continuous operation above 150 °C risks irreversible parametric shift and bond wire failure. Derating is required above 100 °C case temperature per the SOA curves in DS6113, with maximum ID dropping to 10.71 A at TC = 100 °C.

Does STB18NM80 require a negative gate voltage for reliable turn-off?

No - STB18NM80 has a gate threshold voltage of 3–5 V and is fully enhanced at V_GS = 10 V. While ±30 V gate-source voltage is rated, stable turn-off is achieved with 0 V gate bias; applying negative voltage is unnecessary and adds driver complexity without benefit for this device.

Can STB18NM80 replace STW18NM80 in a TO-247-based design?

Electrically identical, but mechanically incompatible: STB18NM80 uses D²PAK (TO-263) with soldered tab, while STW18NM80 uses TO-247 with bolted heatsink interface. Direct replacement requires PCB redesign, thermal pad rework, and gate loop inductance reassessment - not recommended without full thermal and EMI validation.

Is the body diode in STB18NM80 optimized for synchronous rectification?

Yes - the integrated source-drain diode supports 17 A continuous and 68 A pulsed current with 1.6 V forward voltage at 17 A, and exhibits 618 ns reverse recovery time at 25 °C. Its soft recovery characteristic (Q_rr = 9.6 µC) minimizes voltage overshoot in synchronous buck or LLC topologies.