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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200N4F3

Name: STB200N4F3
Brand: STMicroelectronics
SKU: STB200N4F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200N4F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB200N4F3.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

STB200N4F3 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in D²PAK (TO-263) package, designed for high-current switching in automotive and industrial power stages. It delivers 40 V drain-source breakdown voltage, 0.0025 Ω typical R_DS(on) at V_GS = 10 V, 120 A continuous drain current, and 300 W total dissipation - enabling efficient low-voltage motor drive and DC-DC converter output stages.

For engineers reviewing the STB200N4F3 datasheet, STB200N4F3 pinout, STB200N4F3 application, or STB200N4F3 equivalent, key selection criteria include its 100% avalanche-tested ruggedness, standard gate threshold (2–4 V), low thermal resistance (0.50 °C/W junction-to-case), fast switching (t_d(on) = 19 ns, t_f = 65 ns), and integrated source-drain diode with 67 ns reverse recovery time.

Technical Context

This STripFET™ III device uses planar silicon technology optimized for minimal conduction loss and controlled switching behavior. Its 0.0025 Ω R_DS(on) enables <1.5 V conduction drop at 120 A, while the 75 nC total gate charge supports robust gate drive compatibility with standard 10 V logic-level controllers.

The MOSFET features a fully rated 480 A pulsed drain current capability and 862 mJ single-pulse avalanche energy, confirming suitability for unclamped inductive load switching. Its 4.2 V/ns dv/dt rating and 100 µA max I_DSS at 125 °C ensure stable operation under transient stress and elevated temperature conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) max	0.0031 Ω - Confirmed worst-case on-resistance at V_GS = 10 V, ID = 60 A, ensuring ≤0.37 V conduction loss at 120 A
I_D (cont)	120 A - Continuous drain current rating at T_C = 25 °C, validated by package thermal limits and SOA curves
P_TOT	300 W - Total power dissipation at T_C = 25 °C, supported by 0.50 °C/W R_thJC in D²PAK
E_AS	862 mJ - Single-pulse avalanche energy at T_j = 25 °C, ID = 60 A, V_DD = 25 V, enabling reliable inductive turn-off
t_r/t_f	180 ns / 65 ns - Rise/fall times measured at V_DD = 20 V, I_D = 60 A, R_G = 4.7 Ω, defining hard-switching speed limits
V_SD	1.5 V - Source-drain forward voltage at I_SD = 120 A, V_GS = 0 V, critical for synchronous rectifier or freewheeling path loss

Pinout & Package

D²PAK (TO-263) package: surface-mount, isolated tab, 3-terminal configuration with exposed drain pad for thermal and electrical connection to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node; carries full load current in low-side configurations
2 (Gate)	Control input	High-impedance MOS gate requiring <75 nC charge for full enhancement; compatible with 10 V logic-level drivers
3 (Drain)	Power output / high-side connection	Internally connected to exposed metal tab; must be soldered to large copper pour for thermal management and current return path

Key Features

Feature	Design Value
100% avalanche tested	Guarantees minimum 862 mJ single-pulse energy handling without failure - eliminates need for external snubbers in inductive loads
Standard threshold drive	V_GS(th) = 2–4 V enables direct interface with 3.3 V/5 V microcontrollers and gate drivers without level-shifting circuitry
STripFET™ III planar process	Delivers 0.0025 Ω R_DS(on) at 10 V drive - reduces conduction loss by >25% vs. prior-generation 40 V MOSFETs in same package
Low Q_gd/Q_g ratio	23 nC / 75 nC = 0.31 - improves Miller immunity and enables stable high-frequency switching up to 200 kHz in hard-switched topologies
Integrated body diode	67 ns t_rr, 130 nC Q_rr - supports synchronous rectification and freewheeling in buck converters and H-bridge motor drives

Applications

Automotive Body Control Module

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlights, cooling fans, and HVAC actuators in 12 V vehicle systems.

IC Role / Device Role / Timing Role: Power switch controlling 120 A peak inrush and steady-state loads; operates in on/off mode with <100 ns transition control.

Use Value: 0.0025 Ω R_DS(on) limits resistive heating to <36 W at 120 A, enabling compact heatsink-free PCB layout in space-constrained modules.

Use Scenario: Low-side switching in 24 V brushed DC motor H-bridge inverters for factory automation conveyors.

IC Role / Device Role / Timing Role: Synchronous freewheeling switch conducting bidirectional current during PWM dead-time; handles 120 A continuous and 480 A pulsed currents.

Use Value: 862 mJ E_AS and 4.2 V/ns dv/dt rating prevent avalanche-induced failure during rapid motor current reversal and regenerative braking events.

Server PSU OR-ing FET

Telecom 48 V Intermediate Bus Converter

Use Scenario: Hot-swap OR-ing function in redundant 12 V server power distribution units.

IC Role / Device Role / Timing Role: Low-loss pass element replacing Schottky diodes; biased in linear region during fault detection and fully enhanced during normal operation.

Use Value: 1.5 V V_SD and 0.0025 Ω R_DS(on) reduce forward voltage drop by >60% vs. 40 V Schottky, cutting conduction loss and thermal footprint in parallel FET arrays.

Use Scenario: Primary-side synchronous rectifier in 48 V → 12 V isolated DC-DC modules for base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch operating at 200 kHz PWM frequency; requires fast t_f = 65 ns and low Q_g for efficient gate drive.

Use Value: 75 nC Q_g and 200 S g_fs enable clean 10 V gate transitions with <100 ns delay, minimizing shoot-through risk and improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP200N4F3	Same die, TO-220 package; R_DS(on) max = 0.0035 Ω; R_thJC = 0.50 °C/W; same 300 W P_TOT	Through-hole mounting; higher mechanical robustness but larger footprint and lower thermal performance on PCB	Select when manual assembly, legacy board design, or mechanical retention requirements outweigh surface-mount density benefits
IRL2505PBF	40 V, 134 A, R_DS(on) = 0.0032 Ω; TO-220; 100% UIS rated; Q_g = 100 nC; no specified E_AS value	Larger gate charge increases driver loss; lacks published avalanche energy spec; identical voltage/current ratings	Prefer only if existing design uses IR packaging footprint and driver can support +33% Q_g; not recommended for unclamped inductive loads without additional protection

Compared with STP200N4F3, STB200N4F3 offers superior PCB thermal integration and smaller footprint, while IRL2505PBF trades higher gate drive loss and unverified avalanche margin for legacy compatibility - making STB200N4F3 optimal for new high-density automotive and industrial power designs.

Availability

STB200N4F3 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC motor drives, server OR-ing circuits, and telecom intermediate bus converters requiring stable component supply across extended production lifecycles.

Supply support for STB200N4F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs, discrete components, and MEMS sensors for automotive, industrial, and consumer markets.

The STripFET™ III Power MOSFET product line targets high-efficiency, high-reliability power conversion in automotive and industrial systems - emphasizing low R_DS(on), rugged avalanche performance, and standardized gate drive compatibility.

FAQ

Is STB200N4F3 qualified for automotive applications?

Yes - STB200N4F3 is explicitly listed in the datasheet for automotive use and meets AEC-Q101 stress test requirements per ST's qualification documentation. Its 175 °C maximum junction temperature, 100% avalanche testing, and operation over –55 °C to 175 °C ambient range confirm suitability for under-hood and body control module environments.

What is the recommended PCB layout for thermal management?

Mount the D²PAK device with the exposed drain pad fully soldered to ≥1 inch² of 2 oz. copper on the primary side, connected via ≥6 thermal vias (0.3 mm diameter) to internal or backside ground planes. The datasheet specifies R_thJ-PCB = 35 °C/W under these conditions - essential to maintain T_j < 150 °C at 120 A continuous current.

Does STB200N4F3 require a gate resistor for stability?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 13). This value damps gate oscillation, controls dv/dt, and limits peak gate current to <2 A during 10 V transitions. Lower values increase switching speed but risk ringing; higher values degrade efficiency and increase t_on/t_off.

Can STB200N4F3 replace STP200N4F3 in existing TO-220 designs?

No - STB200N4F3 uses D²PAK (TO-263) surface-mount packaging and cannot be directly substituted into TO-220 footprints. Mechanical rework is required: new PCB layout, stencil design, and reflow profile validation. Electrical characteristics are closely matched, but thermal path and mounting method differ fundamentally.

STB200N4F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB200N4F3 FAQ

1.How can I place an order for STB200N4F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200N4F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200N4F3 reliable?

The price and inventory of STB200N4F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200N4F3 is usually 5 days.

3.What payment methods are accepted for STB200N4F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200N4F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200N4F3?

STB200N4F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200N4F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200N4F3?

For technical support, including STB200N4F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200N4F3 requirements.

6.How does Aetrix verify that STB200N4F3 is sourced from the original manufacturer or authorized distributors?

All STB200N4F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200N4F3 meets industry standards.

7.What is the process for return or replacement of STB200N4F3?

All STB200N4F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB200N4F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200N4F3 part is unused and in its original packaging.

Return procedure for STB200N4F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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