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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200N6F3

Name: STB200N6F3
Brand: STMicroelectronics
SKU: STB200N6F3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200N6F3

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB200N6F3.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STB200N6F3 from STMicroelectronics is an N-channel 60 V, 3.0 mΩ (typ), 120 A D2PAK Power MOSFET optimized for high-current switching in DC-DC converters, motor drives, and industrial power supplies. It features ultra-low R_DS(on), 100% avalanche-tested ruggedness, and 330 W total dissipation at T_C = 25°C.

For engineers reviewing the STB200N6F3 datasheet, STB200N6F3 pinout, STB200N6F3 application, or STB200N6F3 equivalent, this device is selected for high-efficiency, high-reliability power switching where low conduction loss, fast switching, and robust unclamped inductive energy handling (918 mJ E_AS) are critical.

Technical Context

This STripFET™ III MOSFET uses trench-gate technology to minimize R_DS(on) while maintaining gate charge (Q_g = 101 nC) and capacitance (C_iss = 6265 pF) suitable for hard-switched 100–200 kHz applications. Its 60 V V_DSS rating supports 48 V bus systems with margin.

The device integrates a fast, low-loss body diode (t_rr = 67 ns, Q_rr = 177.6 nC) and operates across –55 °C to +175 °C junction temperature. Thermal resistance R_thj-case is 0.45 °C/W in D2PAK, enabling high-power density thermal design with minimal heatsink mass.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports 48 V nominal input rails with 25 % overvoltage margin for transient suppression.
R_DS(on) (max)	3.5 mΩ @ V_GS = 10 V - Delivers ≤ 50.4 W conduction loss at 120 A continuous current.
I_D (cont)	120 A @ T_C = 25°C - Rated for high-current load switching; limited by wire bonding, not silicon.
E_AS	918 mJ - Withstands single-pulse unclamped inductive energy without failure (T_j = 25°C, I_D = 60 A, V_DD = 35 V).
Q_g	101 nC - Enables efficient gate drive with standard 1–2 A peak drivers at ≤ 200 kHz switching frequencies.
t_r/t_f	75 ns / 14 ns - Fast edge rates reduce switching losses and EMI generation in hard-switched topologies.
R_thj-case	0.45 °C/W - Allows > 300 W power dissipation with modest heatsinking (ΔT = 150°C).

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated drain tab, 3-pin configuration with exposed metal pad for thermal and electrical connection to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground or low-side return path; carries full load current in low-side switch configurations.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nC charge for full enhancement; sensitive to ESD and ringing.
Pin 3 (Drain)	Power output / high-side connection	Internally bonded to large copper tab; must be soldered to PCB copper pour for thermal and current integrity.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.0 mΩ typ @ 10 V - Reduces I²R losses by >30 % vs. prior-generation 60 V MOSFETs at 100 A.
100 % avalanche rated	918 mJ single-pulse E_AS - Eliminates need for external snubbers in inductive load switching (e.g., solenoids, motors).
Fast body diode	t_rr = 67 ns, Q_rr = 177.6 nC - Minimizes reverse recovery loss and voltage overshoot in synchronous rectification and freewheeling paths.
STripFET™ III process	Optimized trench architecture - Balances low gate charge (101 nC) and low output capacitance (C_oss = 1295 pF) for ZVS/ZCS compatibility.
ECOPACK® compliant	Lead-free, RoHS-compliant D2PAK - Meets environmental requirements for industrial and consumer equipment without derating.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current 3-phase BLDC inverter driving 5–10 kW industrial pumps or fans.

IC Role / Device Role / Timing Role: Low-side N-channel switch in 6-pack half-bridge configuration; handles 120 A peak phase current with <100 ns dead-time tolerance.

Use Value: 3.5 mΩ R_DS(on) limits conduction loss to <51 W per device at full load, reducing heatsink size by 40 % vs. 5 mΩ alternatives.

Use Scenario: 48 V-to-12 V, 600 W isolated forward converter in factory automation PLC power supply.

IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 150 kHz with 50 % duty cycle; withstands 100 V drain spikes during reset.

Use Value: 918 mJ E_AS rating eliminates need for clamp circuits, simplifying layout and improving reliability under overload conditions.

Server PSU OR-ing FET

EV Onboard Charger Input Stage

Use Scenario: Hot-swap OR-ing diode replacement in redundant 12 V server backplane supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier configured as ideal diode; controlled by external driver to minimize forward voltage drop.

Use Value: Body diode V_SD = 1.5 V @ 120 A enables <70 % lower forward loss than Schottky diodes, cutting thermal load by >25 W.

Use Scenario: AC/DC PFC front-end switch in 6.6 kW EV onboard charger using interleaved boost topology.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element in 100 kHz boost cell; subjected to repetitive unclamped inductive stress.

Use Value: 175 °C max T_j and 0.45 °C/W R_thj-case support sustained 120 A operation with air-cooled heatsinks in compact automotive enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP200N6F3	Same die, TO-220 package; R_DS(on) max = 3.8 mΩ; R_thj-case = 0.45 °C/W but higher R_thj-amb.	Through-hole mounting; less suitable for high-density automated assembly or high-frequency thermal cycling.	Select when manual prototyping, legacy board compatibility, or vertical heatsink mounting is required.
IRFB4115PBF	60 V, 3.2 mΩ, 110 A, TO-220; Q_g = 120 nC; E_AS = 720 mJ; no D2PAK option.	Higher gate charge increases driver loss; lower avalanche energy reduces margin in inductive switching.	Choose only if TO-220 footprint is fixed and 20 % lower E_AS is acceptable for the application's worst-case fault profile.

Compared with STP200N6F3 and IRFB4115PBF, STB200N6F3 delivers superior power density via D2PAK surface-mount integration, lowest R_DS(on) in its family, and highest verified avalanche robustness-making it optimal for space-constrained, high-reliability 48 V industrial and automotive power stages.

Availability

STB200N6F3 is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STB200N6F3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STripFET™ III Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server/telecom power supplies.

FAQ

What is the maximum continuous drain current for STB200N6F3 at 100°C case temperature?

The datasheet specifies ID = 120 A at TC = 100°C (Table 2). This rating is limited by package wire bonding-not silicon thermal limits-and remains constant from 25°C to 100°C case temperature, enabling predictable derating in thermally constrained designs.

Does STB200N6F3 require a gate resistor for safe operation?

Yes. A gate resistor (typically 4.7 Ω, per Figure 15 test circuit) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. Omitting it risks gate oscillation, shoot-through in half-bridges, and accelerated gate oxide degradation.

Can STB200N6F3 be used in synchronous rectification mode?

Yes. Its low R_DS(on) and fast, soft-recovery body diode (t_rr = 67 ns, Q_rr = 177.6 nC) make it suitable for synchronous rectification in LLC and forward converters up to 200 kHz, provided gate drive timing avoids cross-conduction.

Is the D2PAK package of STB200N6F3 lead-free and RoHS compliant?

Yes. The device is manufactured in ECOPACK®-compliant D2PAK packaging, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 3, with lead-free terminations and halogen-free molding compound.

STB200N6F3 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB200N6F3 FAQ

1.How can I place an order for STB200N6F3 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200N6F3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200N6F3 reliable?

The price and inventory of STB200N6F3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200N6F3 is usually 5 days.

3.What payment methods are accepted for STB200N6F3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200N6F3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200N6F3?

STB200N6F3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200N6F3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200N6F3?

For technical support, including STB200N6F3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200N6F3 requirements.

6.How does Aetrix verify that STB200N6F3 is sourced from the original manufacturer or authorized distributors?

All STB200N6F3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200N6F3 meets industry standards.

7.What is the process for return or replacement of STB200N6F3?

All STB200N6F3 units undergo pre-shipment inspection (PSI). If there is an issue with STB200N6F3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200N6F3 part is unused and in its original packaging.

Return procedure for STB200N6F3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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