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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200NF03T4

Name: STB200NF03T4
Brand: STMicroelectronics
SKU: STB200NF03T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200NF03T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB200NF03T4.pdf

Description:: MOSFET N-CH 30V 120A D2PAK

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Product details

Overview

STB200NF03T4 from STMicroelectronics is an N-channel 30V Power MOSFET in D2PAK package, featuring R_DS(on) = 0.0032 Ω (typ), 120A continuous drain current at T_C = 25°C, and 1.45 J single-pulse avalanche energy. It is designed for high-current DC-DC converter primary-side switching and motor drive half-bridge legs where low conduction loss and rugged unclamped inductive switching are required.

For engineers reviewing the STB200NF03T4 datasheet, STB200NF03T4 pinout, STB200NF03T4 application, or STB200NF03T4 equivalent, key selection criteria include verified R_DS(on) at 10 V_GS, thermal resistance junction-to-case (0.5 °C/W), gate charge (113 nC), safe operating area under unclamped inductive load, and D2PAK tape-and-reel packaging compatibility with automated SMT assembly.

Technical Context

This STripFET™ III MOSFET uses ST's Single Feature Size™ strip-based process to achieve high cell density and low on-resistance while maintaining robust avalanche capability. Its gate threshold voltage (2–4 V) supports standard logic-level drive, and its 1.3 V source-drain diode forward voltage enables efficient synchronous rectification in buck converters.

The device exhibits 4950 pF input capacitance and 280 pF reverse transfer capacitance at V_DS = 25 V, enabling predictable switching behavior in hard-switched topologies. Its 75 ns turn-off delay and 60 ns fall time support operation up to several hundred kHz in power supplies without excessive switching loss penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal bus systems with margin for transients.
R_DS(on)	0.0032 Ω (typ) at V_GS = 10 V - Enables ≤ 46 W conduction loss at 120 A, critical for high-efficiency 12/24 V industrial power stages.
I_D (cont)	120 A at T_C = 25°C - Confirmed continuous current rating limited by D2PAK package thermal capacity, not silicon.
E_AS	1.45 J - Energy-handling capability during unclamped inductive switching, validated per JEDEC JESD24-1.
Q_g	113 nC - Total gate charge determines driver strength requirement; ~1.1 A peak needed for 100 ns rise time with 10 Ω gate resistor.
R_thj-case	0.5 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for >200 W dissipation with <100°C temperature rise.
V_SD	1.3 V at I_SD = 120 A - Low body diode forward voltage reduces freewheeling loss in non-synchronous topologies.

Pinout & Package

D2PAK (TO-263) package: surface-mount, isolated tab, 3-pin outline with exposed drain pad for thermal and electrical connection to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires 10 V drive for full enhancement; gate-source leakage ≤ ±100 nA at ±20 V.
2 (D)	Drain	High-side switching node; electrically and thermally connected to exposed metal tab; must be routed over large copper area.
3 (S)	Source	Power return path; referenced to gate drive ground; source-drain diode conducts during freewheeling phase.

Key Features

Feature	Design Value
STripFET™ III process	Enables 0.0032 Ω R_DS(on) in D2PAK without compromising avalanche ruggedness or manufacturing yield.
100% avalanche tested	Each unit validated to withstand 1.45 J single-pulse energy-ensures reliability in motor control fault conditions.
Standard threshold drive	V_GS(th) = 2–4 V allows direct interface with 3.3 V or 5 V microcontrollers without level-shifting circuitry.
ECOPACK® compliant	Lead-free second-level interconnect meets RoHS and JEDEC JESD97 marking requirements for industrial use.

Applications

Motor Drive Half-Bridge

DC-DC Converter Primary Switch

Use Scenario: High-current BLDC motor inverter stage operating from 24 V battery with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in three-phase half-bridge; handles bidirectional current during PWM commutation and regenerative braking.

Use Value: 0.0032 Ω R_DS(on) limits conduction loss to <46 W at 120 A, reducing heatsink size by ≥30% vs. comparable 5 mΩ devices.

Use Scenario: 200 W isolated flyback or forward converter in industrial PLC power supply.

IC Role / Device Role / Timing Role: Primary-side switching element; switched at 100–250 kHz with unclamped inductive stress during MOSFET turn-off.

Use Value: 1.45 J E_AS rating ensures reliable operation under output short-circuit or transformer saturation events without failure.

Synchronous Rectifier

Hot-Swap Controller

Use Scenario: Secondary-side synchronous rectification in 12 V output LLC resonant converter for telecom shelf power.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diode; body diode conducts only during dead-time before gate turn-on.

Use Value: 1.3 V V_SD and fast 70 ns t_rr minimize reverse recovery loss and enable precise timing control of gate drive signals.

Use Scenario: 24 V hot-swap module protecting backplane from inrush current during board insertion.

IC Role / Device Role / Timing Role: Inrush limiting switch; operates in linear region during soft-start, then fully enhanced for steady-state conduction.

Use Value: 0.5 °C/W R_thj-case and 300 W P_tot allow sustained 120 A linear-mode operation for ≥50 ms without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404ZPBF	R_DS(on) = 0.004 Ω (typ), Q_g = 131 nC, TO-220 package	Larger package footprint and higher gate charge increase layout area and driver complexity	Prefer STB200NF03T4 when D2PAK SMT integration, lower Q_g, or tighter thermal coupling to PCB is required.
IXTP120N04T	R_DS(on) = 0.0035 Ω (typ), V_DS = 40 V, TO-220 package	Higher voltage rating adds cost and capacitance; no avalanche energy spec published	Choose STB200NF03T4 for 30 V systems demanding proven avalanche ruggedness and D2PAK manufacturability.

Compared with IRF1404ZPBF and IXTP120N04T, STB200NF03T4 delivers lower R_DS(on), lower Q_g, and documented 1.45 J E_AS in a surface-mount D2PAK package-making it optimal for space-constrained, high-reliability 24 V industrial power stages requiring repeatable thermal performance.

Availability

STB200NF03T4 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, synchronous rectifiers, and hot-swap controllers requiring stable component supply across production lifecycles.

Supply support for STB200NF03T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.

This device belongs to ST's STripFET™ III Power MOSFET product line, engineered specifically for high-current, high-efficiency switching in 12–48 V industrial and automotive power systems.

FAQ

What is the maximum continuous drain current for STB200NF03T4 at 100°C case temperature?

The datasheet specifies ID = 120 A at TC = 100°C, confirming that the D2PAK package maintains full rated current capability up to 100°C case temperature due to its low 0.5 °C/W thermal resistance. This eliminates derating in well-heatsinked industrial environments.

Does STB200NF03T4 support logic-level gate drive?

Yes-its gate threshold voltage range is 2–4 V, allowing direct drive from 3.3 V or 5 V microcontrollers. However, full enhancement (R_DS(on) = 0.0032 Ω) requires V_GS ≥ 10 V, so a dedicated gate driver is recommended for high-frequency switching.

How is avalanche ruggedness validated for this MOSFET?

Each STB200NF03T4 unit undergoes 100% production avalanche testing per JEDEC JESD24-1, with single-pulse energy set to 1.45 J at T_j = 25°C, I_D = 60 A, and V_DD = 25 V-ensuring field reliability in unclamped inductive switching events.

Can STB200NF03T4 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Figure 10) ensures inherent current sharing. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation; typical layout achieves <5% current imbalance at 120 A total.

STB200NF03T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ III

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB200NF03T4 FAQ

1.How can I place an order for STB200NF03T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200NF03T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200NF03T4 reliable?

The price and inventory of STB200NF03T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200NF03T4 is usually 5 days.

3.What payment methods are accepted for STB200NF03T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200NF03T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200NF03T4?

STB200NF03T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200NF03T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200NF03T4?

For technical support, including STB200NF03T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200NF03T4 requirements.

6.How does Aetrix verify that STB200NF03T4 is sourced from the original manufacturer or authorized distributors?

All STB200NF03T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200NF03T4 meets industry standards.

7.What is the process for return or replacement of STB200NF03T4?

All STB200NF03T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB200NF03T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200NF03T4 part is unused and in its original packaging.

Return procedure for STB200NF03T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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