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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200NF04-1

Name: STB200NF04-1
Brand: STMicroelectronics
SKU: STB200NF04-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200NF04-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB200NF04-1.pdf

Description:: MOSFET N-CH 40V 120A I2PAK

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Product details

Overview

STB200NF04-1 from STMicroelectronics is an N-channel 40 V, 120 A, 310 W power MOSFET in I2PAK (TO-262) package, featuring 3.7 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche tested, and optimized for high-current switching in automotive and industrial power stages.

For engineers reviewing the STB200NF04-1 datasheet, STB200NF04-1 pinout, STB200NF04-1 application, or STB200NF04-1 equivalent, key selection criteria include its low on-resistance, rugged unclamped inductive switching capability (E_AS = 1.3 J), fast turn-on/off timing (t_d(on) = 30 ns, t_d(off) = 140 ns), and thermal resistance of 0.48 °C/W junction-to-case.

Technical Context

This MOSFET employs ST's StripFET™ II process with single-feature-size strip geometry, enabling high cell density and low R_DS(on) while maintaining robust avalanche energy handling (1.3 J) and di/dt tolerance up to 500 A/µs under unclamped inductive conditions.

It operates with standard gate threshold (V_GS(th) = 2–4 V), supports ±20 V gate drive, and integrates a fast-recovery body diode (t_rr = 85 ns, Q_rr = 190 nC) suitable for synchronous rectification and hard-switched DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage for 12 V automotive and 24 V industrial bus applications.
R_DS(on)	3.7 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 120 A continuous current, reducing heatsink requirements.
I_D (cont.)	120 A @ T_C = 25°C - Sustains full rated current with proper heatsinking; derated linearly above 25°C case temperature.
E_AS	1.3 J - Single-pulse avalanche energy rating ensures reliability in inductive load switching without external snubbers.
t_d(on)/t_d(off)	30 ns / 140 ns - Fast switching enables >100 kHz operation in SMPS while minimizing overlap losses.
Q_g	170 nC - Gate charge value informs driver selection; requires ≥2 A peak gate current for 10 ns rise time.
R_thj-case	0.48 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for high-power dissipation.

Pinout & Package

The STB200NF04-1 is housed in an I2PAK (TO-262) surface-mount-compatible package with isolated tab, featuring three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying terminal, high-side switch node	Electrically tied to drain; must be insulated from heatsink unless referenced to system ground or high-side rail.
Pin 1	Source	Reference node for gate drive; carries full load current; connects to ground or low-side return path.
Pin 2	Gate	Control input; requires low-impedance drive (≤4.7 Ω series resistor typical) to manage Q_g = 170 nC.

Key Features

Feature	Design Value
StripFET™ II process	Enables 3.7 mΩ R_DS(on) in I2PAK without compromising avalanche ruggedness or manufacturability.
100% avalanche tested	Each unit validated for E_AS ≥ 1.3 J, ensuring field reliability in motor drive and solenoid control.
Fast body diode	t_rr = 85 ns, Q_rr = 190 nC - Reduces switching loss and EMI in freewheeling paths versus standard MOSFETs.
High dV/dt immunity	1.5 V/ns rated dv/dt - Resists false turn-on during high-speed switching in noisy power systems.

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 12 V brushed DC motors in power seats, window lifts, and HVAC actuators.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling bidirectional motor current up to 120 A peak.

Use Value: Low R_DS(on) minimizes heat generation in confined chassis spaces; avalanche rating handles inductive kickback without clamping diodes.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in 48 V–12 V isolated buck converters.

IC Role / Device Role / Timing Role: Power switch operating at 100–200 kHz with fast turn-off (140 ns) to reduce dead-time losses.

Use Value: 170 nC Q_g allows efficient gate driving with integrated drivers; 0.48 °C/W R_thj-case supports compact thermal design.

Power Distribution Units

UPS Inverter Stages

Use Scenario: Solid-state circuit breaker or hot-swap controller in 24 V telecom and server power distribution.

IC Role / Device Role / Timing Role: Load switch managing up to 120 A continuous current with controlled inrush and fault isolation.

Use Value: 40 V V_DSS provides margin over 24 V nominal bus; 480 A pulsed ID_M supports short-circuit withstand for 100 µs.

Use Scenario: Half-bridge leg in 1 kVA offline UPS inverters converting 360 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-current, high-reliability switching device handling 120 A RMS output current with unclamped inductive stress.

Use Value: 1.3 J E_AS rating ensures safe operation during output short-circuit events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 4.0 mΩ, V_DSS = 150 V, Q_g = 190 nC, TO-220 package	Higher voltage rating but higher on-resistance and gate charge; less optimal for 12–24 V systems	Prefer when 150 V blocking is required; avoid if minimizing conduction loss at 40 V is critical.
IXFH120N04T2	R_DS(on) = 3.2 mΩ, V_DSS = 40 V, Q_g = 160 nC, TO-247 package	Lower R_DS(on) and Q_g, but larger TO-247 footprint and higher cost	Select for maximum efficiency in space-unconstrained designs; not drop-in compatible due to package and pinout.

Compared with IRFB4115PBF and IXFH120N04T2, the STB200NF04-1 delivers best-in-class R_DS(on)/package density for 40 V systems, balances gate drive simplicity with avalanche safety, and offers I2PAK thermal performance superior to TO-220 but smaller than TO-247-ideal for mid-power automotive modules.

Availability

STB200NF04-1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and power distribution units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for STB200NF04-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The STB200NF04-1 belongs to ST's StripFET™ II power MOSFET product line, engineered specifically for high-current, high-reliability switching in automotive body electronics and industrial power conversion where avalanche robustness and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STB200NF04-1 maintains 120 A continuous drain current rating at T_C = 100°C, per the Absolute Maximum Ratings table. This reflects its robust thermal design and low R_DS(on), enabling sustained high-current operation without derating below 100°C case temperature.

Is the I2PAK package lead-free and RoHS-compliant?

Yes, the STB200NF04-1 I2PAK package is lead-free and RoHS-compliant, consistent with STMicroelectronics' 2003 manufacturing standards and EU Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level MSL3.

Can this MOSFET replace STP200NF04 in existing TO-220 layouts?

No-STB200NF04-1 uses I2PAK (TO-262) packaging with different pinout, footprint, and thermal mounting requirements versus TO-220. While electrically identical, mechanical redesign is required for PCB layout, heatsink interface, and assembly process.

What is the recommended gate resistor for 100 kHz PWM operation?

A 4.7 Ω gate resistor is specified in the datasheet for switching tests (V_GS = 10 V, R_G = 4.7 Ω). For 100 kHz operation, this value balances switching speed (t_r/t_f ≈ 320/120 ns) and gate drive stability; lower values may increase EMI, higher values raise switching losses.

STB200NF04-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 310W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB200NF04-1 FAQ

1.How can I place an order for STB200NF04-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200NF04-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200NF04-1 reliable?

The price and inventory of STB200NF04-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200NF04-1 is usually 5 days.

3.What payment methods are accepted for STB200NF04-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200NF04-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200NF04-1?

STB200NF04-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200NF04-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200NF04-1?

For technical support, including STB200NF04-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200NF04-1 requirements.

6.How does Aetrix verify that STB200NF04-1 is sourced from the original manufacturer or authorized distributors?

All STB200NF04-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200NF04-1 meets industry standards.

7.What is the process for return or replacement of STB200NF04-1?

All STB200NF04-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB200NF04-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200NF04-1 part is unused and in its original packaging.

Return procedure for STB200NF04-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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