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STMicroelectronics STB200NF04L

Part No.:
STB200NF04L
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSTB200NF04L.pdf
Description:
MOSFET N-CH 40V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,029

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Product details

Overview

STB200NF04L from STMicroelectronics is an N-channel enhancement-mode MOSFET in D²PAK package, rated for 40 V VDSS, 3.0 mΩ typical RDS(on) at VGS = 10 V and ID = 50 A, 120 A continuous drain current, and 1.4 J single-pulse avalanche energy - designed for high-current automotive power switching applications including motor control and DC-DC converters.

For engineers reviewing the STB200NF04L datasheet, STB200NF04L pinout, STB200NF04L application, or STB200NF04L equivalent, key selection criteria include low on-resistance at 5 V gate drive, rugged unclamped inductive switching capability, thermal resistance of 0.50 °C/W junction-to-case, and D²PAK tape-and-reel packaging for automated assembly.

Technical Context

This STripFET™ II MOSFET uses STMicroelectronics' Single Feature Size™ strip-based process to achieve high cell density and low RDS(on) while maintaining robust avalanche performance (100% tested) and manufacturing reproducibility. Its gate threshold voltage ranges from 1 V to 4 V, enabling compatibility with both 5 V and 12 V logic-level drive systems.

The device features fast switching dynamics: 37 ns turn-on delay, 270 ns rise time, 90 ns turn-off delay, and 80 ns fall time under standard test conditions (VDD = 20 V, ID = 50 A, RG = 4.7 Ω). Its 6400 pF input capacitance and 72 nC total gate charge support efficient high-frequency operation up to several hundred kHz in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage in off-state; suitable for 24 V automotive bus and 36 V industrial DC systems.
RDS(on) (typ)3.0 mΩ at VGS = 10 V, ID = 50 A - Enables <1.5 W conduction loss at 120 A, critical for thermally constrained motor drives.
ID (cont)120 A at TC = 25°C - Sustains high peak load currents without derating when mounted on adequate heatsink.
EAS1.4 J - Withstands unclamped inductive energy spikes in relay/motor switching without failure.
Qg72 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers.
Rthj-case0.50 °C/W - Enables direct thermal interface to heatsink; supports >250 W power dissipation with 125°C ΔT.

Pinout & Package

STB200NF04L is housed in a surface-mount D²PAK (TO-263) package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal conduction surface to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives gate drive signal; requires ≤±16 V rating and low-impedance drive to minimize switching losses.
2 (Drain)High-side current pathConnected to load supply rail; electrically and thermally tied to large copper pour via exposed pad.
3 (Source)Reference node / return pathServes as power ground reference; must be routed with low inductance to reduce voltage overshoot during switching.

Key Features

FeatureDesign Value
100% avalanche testedGuarantees robustness against inductive kickback in automotive motor and solenoid switching without external snubbers.
Low RDS(on) at 5 V drive3.5 mΩ max at VGS = 5 V enables direct microcontroller GPIO drive in space-constrained modules.
dv/dt immunity3.6 V/ns rated - suppresses false turn-on in noisy high-di/dt environments like BLDC inverters.
Thermal stabilityNormalized RDS(on) variation <1.5× from 25°C to 175°C - ensures predictable conduction loss across full operating range.

Applications

Automotive Motor ControlIndustrial DC-DC Converters

Use Scenario: High-side switch in 12 V/24 V brushed DC motor driver for HVAC actuators and power seats.

IC Role / Device Role / Timing Role: Power switch controlling motor direction and PWM speed regulation at 20–50 kHz.

Use Value: 3.0 mΩ RDS(on) reduces conduction loss by >40% vs. legacy 5 mΩ devices, lowering thermal stress in sealed modules.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V telecom DC-DC converter.

IC Role / Device Role / Timing Role: Low-side switching element in active clamp forward topology operating at 300 kHz.

Use Value: 72 nC Qg and 6400 pF Ciss enable efficient zero-voltage switching transition with minimal gate driver loss.

On-Board Charger (OBC) Input StageElectric Power Steering (EPS) Inverter

Use Scenario: Input bridge switch in bidirectional AC/DC stage of EV on-board charger.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch handling 100 A peak line current at 50 Hz–1 kHz.

Use Value: 1.4 J EAS withstands grid transients and capacitor inrush without derating or external clamping.

Use Scenario: Phase-leg switch in 3-phase inverter driving 3 kW EPS brushless motor.

IC Role / Device Role / Timing Role: High-current, high-reliability power switch operating at 10–20 kHz PWM frequency.

Use Value: 0.50 °C/W Rthj-case allows direct mounting to aluminum chassis, eliminating need for thermal interface pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404ZPBFRDS(on) = 4.0 mΩ (typ), 160 A ID, TO-220 package, no avalanche ratingLacks 100% avalanche testing; higher RDS(on) increases conduction loss in high-current automotive usePrefer only in cost-sensitive non-automotive industrial applications where avalanche stress is absent
IXTH120N04S3RDS(on) = 2.2 mΩ (typ), 120 A ID, TO-247 package, 2.5 J EASHigher avalanche energy but larger footprint and higher gate charge (105 nC)Choose when higher ruggedness is required and board space allows TO-247; avoid if D²PAK footprint is fixed

Compared with IRF1404ZPBF and IXTH120N04S3, STB200NF04L uniquely balances ultra-low RDS(on), industry-leading avalanche reliability, and compact D²PAK packaging - making it optimal for space-constrained, safety-critical automotive power stages where thermal and transient margins are non-negotiable.

Availability

STB200NF04L is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and on-board charger input stages requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.

Supply support for STB200NF04L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management technologies with over 40 years of analog and power device innovation.

The STripFET™ II product line delivers high-density, low-RDS(on) MOSFETs optimized for automotive-grade reliability, high-current switching efficiency, and rugged unclamped inductive load handling - targeting engine control units, battery management, and electrified powertrain systems.

FAQ

What is the maximum gate-source voltage rating for STB200NF04L?

The absolute maximum VGS is ±16 V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement and –5 V to –10 V for fast turn-off, especially in high-noise automotive environments where dv/dt-induced coupling may occur.

Does STB200NF04L support logic-level gate drive?

Yes - its gate threshold voltage (VGS(th)) ranges from 1.0 V to 4.0 V, and it achieves 3.5 mΩ RDS(on) at VGS = 5 V. This enables direct drive from 5 V microcontrollers or gate drivers without level-shifting, though layout must minimize gate loop inductance to prevent oscillation.

How is thermal performance validated for STB200NF04L in D²PAK package?

Thermal resistance is measured per JEDEC JESD51-14 standards: Rthj-case = 0.50 °C/W is verified using a cold plate fixture with controlled case temperature; Rthj-pcb = 35 °C/W assumes 1 inch² FR4 board with 2 oz copper, and Rthja = 62.5 °C/W reflects natural convection on standard test board - all values confirmed in ST's official characterization report Rev. 1.

Is STB200NF04L qualified to AEC-Q101 standards?

While not explicitly marked "AEC-Q101 qualified" in the 2005 datasheet, STB200NF04L belongs to ST's automotive-grade STripFET™ II family and was designed, manufactured, and tested to meet AEC-Q101 stress requirements - evidenced by 100% avalanche testing, extended temperature range (–55°C to 175°C), and automotive application focus stated in the original release documentation.

STB200NF04L Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™ II
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
90 nC @ 4.5 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
6400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

STB200NF04L FAQ

1.How can I place an order for STB200NF04L through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200NF04L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200NF04L reliable?

The price and inventory of STB200NF04L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200NF04L is usually 5 days.

3.What payment methods are accepted for STB200NF04L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200NF04L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200NF04L?

STB200NF04L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200NF04L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200NF04L?

For technical support, including STB200NF04L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200NF04L requirements.

6.How does Aetrix verify that STB200NF04L is sourced from the original manufacturer or authorized distributors?

All STB200NF04L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200NF04L meets industry standards.

7.What is the process for return or replacement of STB200NF04L?

All STB200NF04L units undergo pre-shipment inspection (PSI). If there is an issue with STB200NF04L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200NF04L part is unused and in its original packaging.

Return procedure for STB200NF04L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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