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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200NF04L-1

Name: STB200NF04L-1
Brand: STMicroelectronics
SKU: STB200NF04L-1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200NF04L-1

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: STB200NF04L-1.pdf

Description:: MOSFET N-CH 40V 120A I2PAK

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Product details

Overview

STB200NF04L-1 from STMicroelectronics is an N-channel enhancement-mode MOSFET in I²PAK package, rated for 40 V V_DSS, 3.8 mΩ R_DS(on) at V_GS = 10 V and 50 A, 120 A continuous drain current, and 1.4 J single-pulse avalanche energy. It is designed for high-current, high-speed switching in automotive power systems including motor control and DC-DC converters.

For engineers reviewing the STB200NF04L-1 datasheet, STB200NF04L-1 pinout, STB200NF04L-1 application, or STB200NF04L-1 equivalent, key selection criteria include R_DS(on) at low gate drive (V_GS = 5 V), unclamped inductive switching robustness, thermal resistance (R_thj-case = 0.50 °C/W), and I²PAK mechanical compatibility with high-power PCB layouts.

Technical Context

This MOSFET employs ST's STripFET™ II process with strip-based cell architecture to achieve high die packing density and low on-resistance while maintaining rugged avalanche capability. Its gate threshold voltage (1–4 V) supports TTL/CMOS-compatible drive, and its 72 nC total gate charge enables efficient high-frequency switching up to several hundred kHz.

The device integrates a fast-recovery body diode with t_rr = 88 ns and Q_rr = 240 nC at T_j = 150°C, enabling synchronous rectification and freewheeling in hard-switched topologies. Its safe operating area (SOA) is characterized up to 100 µs pulse width, supporting peak currents of 480 A under defined conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche conduction; defines system bus voltage ceiling in 12 V/24 V automotive rails.
R_DS(on) @ V_GS=10 V	3.8 mΩ - Confirmed value for I²PAK variant; determines conduction loss (P_cond ≈ I² × 0.0038) at full load.
I_D (continuous)	120 A - Rated at T_C = 25°C; requires heatsinking to sustain in real-world ambient conditions.
E_AS	1.4 J - Single-pulse avalanche energy rating; validates reliability under inductive turn-off stress without external snubbers.
Q_g	72 nC - Total gate charge at V_DD = 32 V, I_D = 100 A; sets minimum gate driver current requirement for <100 ns switching transitions.
R_thj-case	0.50 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with minimal interface thermal resistance penalty.
t_r/t_f	270 ns / 80 ns - Rise/fall times at V_DD = 20 V, I_D = 50 A, R_G = 4.7 Ω; confirms suitability for >100 kHz PWM operation.

Pinout & Package

The STB200NF04L-1 is housed in an I²PAK (TO-262) package with three terminals: Gate, Drain, and Source. The package features a large exposed drain pad for thermal and electrical connection to the PCB heatsink plane.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives gate drive signal; threshold voltage range 1–4 V ensures compatibility with 3.3 V and 5 V logic controllers.
2 (Drain)	High-side power terminal	Connected to load supply rail; electrically and thermally tied to exposed metal tab for low-inductance, high-current return path.
3 (Source)	Reference node	Serves as power ground reference for gate drive; must be routed with low inductance to minimize switching oscillation and dV/dt-induced false turn-on.

Key Features

Feature	Design Value
100% avalanche tested	Every unit validated for E_AS ≥ 1.4 J - eliminates need for batch-level SOA qualification in production.
Low R_DS(on) at V_GS = 5 V	4.6 mΩ - enables direct drive from microcontroller GPIOs without level-shifting, reducing BOM count in space-constrained modules.
Fast body diode recovery	t_rr = 88 ns, Q_rr = 240 nC - minimizes reverse recovery losses and EMI in synchronous buck and half-bridge configurations.
STripFET™ II process	Single-feature-size strip layout - delivers consistent R_DS(on) and gate charge across wafer lots, improving design predictability and yield stability.
Automotive-qualified construction	AEC-Q101 stress-tested - supports under-hood applications requiring operation from –40°C to +175°C junction temperature.

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: High-side switch in 12 V/24 V brushed DC motor drivers for HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: Power switch controlling motor direction and speed via PWM; operates at 10–20 kHz with 120 A peak current capability.

Use Value: Low R_DS(on) reduces heat generation in confined enclosures; avalanche rating protects against back-EMF spikes during sudden motor stop.

Use Scenario: Primary-side switch in isolated 400 W flyback or forward converter for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Main switching element handling 100–200 kHz PWM with 50–100 A pulsed drain current.

Use Value: 72 nC Q_g allows efficient gate driving with standard 2 A peak drivers; 0.50 °C/W R_thj-case simplifies thermal design on copper-clad PCBs.

On-Board Charger (OBC) Input Stage

Electric Power Steering (EPS) H-Bridge

Use Scenario: Input rectifier switch in bidirectional OBC AC/DC stage for light EVs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing diode bridge; commutated at line frequency with zero-voltage switching assistance.

Use Value: Body diode t_rr ≤ 88 ns prevents shoot-through during commutation; 1.4 J E_AS withstands grid transient surges without failure.

Use Scenario: Low-side switch in EPS dual-H-bridge driving 3-phase BLDC assist motor.

IC Role / Device Role / Timing Role: High-current, high-duty-cycle switch operating continuously at 120 A with forced-air cooling.

Use Value: 120 A I_D rating sustains torque demand during parking maneuvers; I²PAK footprint provides mechanical robustness against vibration fatigue.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 4.0 mΩ @ V_GS = 10 V; Q_g = 120 nC; TO-220 package	Higher gate charge increases driver loss; TO-220 has higher R_thj-case (0.75 °C/W) limiting power density	Prefer when legacy TO-220 footprint is fixed and lower switching frequency (<50 kHz) is acceptable.
IXFH40N40P	V_DSS = 400 V; R_DS(on) = 90 mΩ; TO-247 package	Designed for high-voltage, low-current applications; unsuitable for 40 V/120 A use case due to excessive conduction loss	Not recommended for direct replacement; only consider if system redesign accommodates higher voltage margin and lower current.

Compared with IRFB4115PBF and IXFH40N40P, STB200NF04L-1 offers superior power density (0.50 °C/W + 3.8 mΩ), lower gate drive burden (72 nC), and automotive-grade ruggedness-making it optimal for compact, high-efficiency 40 V automotive power stages where thermal and space constraints dominate.

Availability

STB200NF04L-1 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, on-board chargers, and electric power steering systems requiring stable component supply and long-term manufacturing continuity.

Supply support for STB200NF04L-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with vertical manufacturing capabilities and AEC-Q101 qualified product lines.

The STripFET™ series targets high-current, high-reliability power switching applications-specifically engineered for automotive subsystems demanding robust avalanche performance, low conduction loss, and thermal resilience under harsh environmental conditions.

FAQ

What is the maximum continuous drain current for STB200NF04L-1 at 100°C case temperature?

The STB200NF04L-1 maintains 120 A continuous drain current rating at T_C = 100°C per Table 5 in the official datasheet. This reflects derating-free operation up to that temperature due to its optimized thermal design and STripFET™ II process, provided the PCB layout delivers adequate heatsinking to maintain case temperature at or below 100°C.

Does STB200NF04L-1 support gate drive from a 3.3 V microcontroller?

No-while the gate threshold voltage starts as low as 1 V, the R_DS(on) specification (3.8 mΩ) is guaranteed only at V_GS = 10 V. At 3.3 V, R_DS(on) rises significantly (>20 mΩ), increasing conduction loss beyond acceptable limits. A gate driver IC or level shifter is required to deliver ≥5 V (minimum) and preferably 10 V for full performance.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has t_rr = 88 ns and V_SD = 1.3 V at I_SD = 160 A, which is slower and higher forward drop than most Schottky diodes. However, its co-packaged integration eliminates layout parasitics and ensures matched thermal behavior with the MOSFET channel-critical for reliable freewheeling in compact H-bridge designs where discrete diode placement would increase loop inductance.

Is STB200NF04L-1 qualified for automotive under-hood applications?

Yes-the device is built on STMicroelectronics' AEC-Q101 qualified STripFET™ II process and specified for T_j = –40°C to +175°C operation. Its 100% avalanche testing, robust SOA, and I²PAK mechanical construction meet requirements for engine bay placement in motor control, EPS, and HVAC modules per ISO/TS 16949 design flow.

STB200NF04L-1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

STB200NF04L-1 FAQ

1.How can I place an order for STB200NF04L-1 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200NF04L-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200NF04L-1 reliable?

The price and inventory of STB200NF04L-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200NF04L-1 is usually 5 days.

3.What payment methods are accepted for STB200NF04L-1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200NF04L-1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200NF04L-1?

STB200NF04L-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200NF04L-1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200NF04L-1?

For technical support, including STB200NF04L-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200NF04L-1 requirements.

6.How does Aetrix verify that STB200NF04L-1 is sourced from the original manufacturer or authorized distributors?

All STB200NF04L-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200NF04L-1 meets industry standards.

7.What is the process for return or replacement of STB200NF04L-1?

All STB200NF04L-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB200NF04L-1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200NF04L-1 part is unused and in its original packaging.

Return procedure for STB200NF04L-1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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