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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB200NF04T4

Name: STB200NF04T4
Brand: STMicroelectronics
SKU: STB200NF04T4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB200NF04T4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB200NF04T4.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

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Product details

Overview

STB200NF04T4 from STMicroelectronics is an N-channel 40 V, 120 A D2PAK-packaged STripFET™ II power MOSFET with 3.7 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche tested, and rated for 310 W total dissipation at T_CASE = 25°C. It serves as a high-current, high-speed switching device in automotive DC-DC converters, motor drive half-bridges, and battery protection circuits.

For engineers reviewing the STB200NF04T4 datasheet, STB200NF04T4 pinout, STB200NF04T4 application, or STB200NF04T4 equivalent, key selection criteria include its low on-resistance, rugged unclamped inductive switching capability (E_AS = 1.3 J), fast turn-on/turn-off timing (t_d(on) = 30 ns, t_d(off) = 140 ns), and D2PAK thermal performance (R_thj-case = 0.48 °C/W).

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and low R_DS(on), enabling efficient conduction at high current levels while maintaining robust safe operating area (SOA) under unclamped inductive switching. Its gate threshold voltage (V_GS(th) = 2–4 V) supports standard 10 V logic-level drive.

The integrated body diode exhibits fast reverse recovery (t_rr = 85 ns typ., Q_rr = 190 nC) and low forward voltage (V_SD = 1.3 V at I_SD = 120 A), making it suitable for synchronous rectification and freewheeling in high-frequency power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage; defines maximum bus voltage compatibility in 12 V/24 V automotive systems.
R_DS(on)	3.7 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 120 A, critical for thermal management in high-current PCB layouts.
I_D (cont.)	120 A @ T_C = 25°C - Sustained current rating achievable with proper heatsinking; derates linearly above 25°C (2.07 W/°C).
E_AS	1.3 J - Single-pulse avalanche energy rating; allows reliable operation under unclamped inductive load transients without external snubbers.
t_d(on)/t_d(off)	30 ns / 140 ns - Fast switching enables >100 kHz PWM operation in SMPS and motor control inverters.
Q_g	170 nC - Gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.
V_GS(th)	2–4 V - Standard threshold range ensures reliable turn-on with 5 V or 3.3 V logic-level controllers when driven via gate buffer.

Pinout & Package

STB200NF04T4 is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (pins 1 & 2), Source (pin 3), and Gate (pin 4). The exposed drain pad (pins 1 & 2) provides low-inductance, high-current path and primary thermal conduction to the PCB copper plane.

Pin/Terminal	Circuit Role	Design Meaning
1 & 2 (Drain Pad)	High-current drain connection	Electrically and thermally connected to internal die drain; must be soldered to large copper pour for thermal and EMI performance.
3 (Source)	Power return / reference node	Serves as source terminal and local ground reference for gate drive; low-inductance layout essential for stable switching.
4 (Gate)	Control input	High-impedance MOSFET gate requiring controlled slew rate; sensitive to noise-requires short trace and local decoupling.

Key Features

Feature	Design Value
STripFET™ II process	Enables ultra-low R_DS(on) (3.7 mΩ) in D2PAK without sacrificing ruggedness or manufacturability.
100% avalanche tested	Guarantees single-pulse E_AS ≥ 1.3 J per unit-no screening failures in production lots.
Fast body diode	t_rr = 85 ns and Q_rr = 190 nC support high-frequency synchronous rectification with minimal switching loss.
Low thermal resistance	R_thj-case = 0.48 °C/W enables >200 W continuous power dissipation with moderate heatsinking on 4-layer PCB.
Standard threshold drive	V_GS(th) = 2–4 V ensures compatibility with common microcontroller GPIOs and dedicated gate drivers (e.g., STGAP2S).

Applications

Automotive Battery Disconnect Switch

48 V DC-DC Converter Primary Switch

Use Scenario: High-side main battery disconnect in 12 V/48 V dual-battery architectures, activated during fault conditions or sleep mode.

IC Role / Device Role / Timing Role: Power MOSFET switch controlling main battery path; operates in static on/off state with occasional fast transitions during fault isolation.

Use Value: Low R_DS(on) minimizes voltage drop (<0.45 V at 120 A), preserving system efficiency; avalanche rating handles load dump transients up to 40 V.

Use Scenario: Primary-side high-current switch in isolated bidirectional 48 V–12 V DC-DC converter for vehicle electrification.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Fast switching (t_d(off) = 140 ns) and low Q_g reduce driver losses; low C_oss (1600 pF) improves ZVS behavior at light loads.

Industrial Motor Drive Half-Bridge

EV Onboard Charger Input Stage

Use Scenario: Low-side switch in 3-phase inverter driving 5–10 kW PMSM motors in HVAC compressors or traction auxiliary systems.

IC Role / Device Role / Timing Role: Low-side power switch in PWM-driven half-bridge; conducts 120 A continuously with forced air cooling.

Use Value: Rugged SOA and 100% avalanche test ensure reliability under motor stall and regenerative braking overvoltage events.

Use Scenario: AC-DC front-end switch in 6.6 kW OBC handling 230 VAC rectified input with active PFC and LLC stages.

IC Role / Device Role / Timing Role: High-current switch in interleaved boost PFC stage; switches at 65–100 kHz with 50% duty cycle.

Use Value: Low R_DS(on) reduces conduction loss in high-current PFC legs; fast diode recovery (t_rr = 85 ns) suppresses shoot-through risk during zero-crossing commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 4.0 mΩ, V_DSS = 55 V, Q_g = 190 nC, TO-220 package	Higher voltage rating but higher on-resistance and gate charge; requires through-hole mounting and larger heatsink footprint.	Preferable where 55 V blocking margin is required and board space permits TO-220 layout.
IXFH120N04X4	R_DS(on) = 3.2 mΩ, V_DSS = 40 V, Q_g = 155 nC, TO-247 package	Lower R_DS(on) and gate charge, but TO-247 demands more PCB area and higher assembly cost than D2PAK.	Preferred for highest-efficiency 120 A designs where thermal headroom is constrained and TO-247 is acceptable.

Compared with IRFB4115PBF and IXFH120N04X4, STB200NF04T4 offers optimal balance of D2PAK surface-mount compatibility, 3.7 mΩ conduction loss, and proven automotive-grade avalanche ruggedness-making it ideal for space-constrained, high-reliability 40 V power stages.

Availability

STB200NF04T4 is available at Aetrix Electronics and suitable for automotive battery management, industrial motor drives, and EV onboard charger designs requiring stable component supply and long-term production continuity.

Supply support for STB200NF04T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions with vertical manufacturing and broad IP portfolio.

STB200NF04T4 belongs to the STripFET™ II power MOSFET product line, engineered for high-current, high-reliability switching in automotive and industrial power conversion where avalanche robustness and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for STB200NF04T4 at 100°C case temperature?

The datasheet specifies I_D = 120 A at both T_C = 25°C and T_C = 100°C, indicating no derating is required for continuous current up to 100°C case temperature-enabled by its low R_DS(on) and robust thermal design in D2PAK.

Does STB200NF04T4 require a gate resistor for stable switching?

Yes-a gate resistor (typically 4.7 Ω to 10 Ω) is recommended to control dV/dt and prevent oscillation during switching. The datasheet uses R_G = 4.7 Ω in switching time measurements (t_d(on), t_r, etc.), confirming this value as a validated starting point for most 100–200 kHz applications.

Can STB200NF04T4 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual gate resistors are required. The datasheet confirms parallel use in high-current automotive applications such as starter solenoid drivers and battery contactors.

Is the body diode in STB200NF04T4 suitable for synchronous rectification?

Yes-the body diode has t_rr = 85 ns and Q_rr = 190 nC at I_SD = 120 A, di/dt = 100 A/µs, and T_j = 150°C, meeting requirements for synchronous rectification in 100–200 kHz DC-DC converters where low reverse recovery loss is critical.

STB200NF04T4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™ II

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.7mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 310W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB200NF04T4 FAQ

1.How can I place an order for STB200NF04T4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB200NF04T4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB200NF04T4 reliable?

The price and inventory of STB200NF04T4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB200NF04T4 is usually 5 days.

3.What payment methods are accepted for STB200NF04T4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB200NF04T4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB200NF04T4?

STB200NF04T4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB200NF04T4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB200NF04T4?

For technical support, including STB200NF04T4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB200NF04T4 requirements.

6.How does Aetrix verify that STB200NF04T4 is sourced from the original manufacturer or authorized distributors?

All STB200NF04T4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB200NF04T4 meets industry standards.

7.What is the process for return or replacement of STB200NF04T4?

All STB200NF04T4 units undergo pre-shipment inspection (PSI). If there is an issue with STB200NF04T4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB200NF04T4 part is unused and in its original packaging.

Return procedure for STB200NF04T4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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