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STMicroelectronics STB20NM50-1
- Part No.:
- STB20NM50-1
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
STB20NM50-1.pdf
- Description:
- MOSFET N-CH 550V 20A I2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,757
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Product details
Overview
STB20NM50-1 from STMicroelectronics is an N-channel 500 V, 20 A Power MOSFET in D²PAK (TO-263) package, featuring 250 mΩ max RDS(on), 40–56 nC total gate charge, and 100% avalanche tested operation. It employs MDmesh™ II vertical strip technology for ultra-low conduction and switching losses, targeting high-efficiency AC-DC SMPS, PFC stages, and industrial motor drives.
For engineers reviewing the STB20NM50-1 datasheet, STB20NM50-1 pinout, STB20NM50-1 application, or STB20NM50-1 equivalent, key selection criteria include its 500 V VDS, 200 mΩ typ. RDS(on), 15 V/ns dv/dt capability, 650 mJ single-pulse avalanche energy, and D²PAK thermal performance (RthJC = 0.65 °C/W).
Technical Context
This MOSFET uses ST's second-generation MDmesh™ architecture-combining a vertical drift region with optimized strip layout-to achieve industry-leading RDS(on) × Qg figure of merit. Its low Ciss (1480 pF) and Crss (34 pF) enable fast, low-loss hard-switching in 100–500 kHz converters.
The integrated body diode delivers 350 ns typical reverse recovery time (TJ = 25 °C) and 4.6 µC Qrr, supporting ZVS-capable topologies and reducing EMI in bridge-leg configurations. Avalanche ruggedness (10 A IAR, 650 mJ EAS) ensures reliability under unclamped inductive switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25% margin for voltage transients |
| RDS(on) max | 250 mΩ at VGS = 10 V, ID = 10 A - enables <1.25 W conduction loss at 20 A continuous |
| Qg | 40–56 nC - determines gate drive power and switching speed in 100–300 kHz applications |
| ID cont @ TC = 100 °C | 12.6 A - defines usable current in thermally constrained heatsink environments |
| EAS | 650 mJ - withstands single unclamped inductive energy events without failure |
| dv/dt rating | 15 V/ns - resists false turn-on during high-slew-rate commutation in half-bridge circuits |
| RthJC | 0.65 °C/W - allows >150 W dissipation with modest heatsinking (ΔT = 100 °C) |
Pinout & Package
D²PAK (TO-263) package: surface-mount, isolated tab (drain-connected), 3-pin configuration with standard JEDEC outline and recommended footprint per Figure 19 (DS2216 Rev 14).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain | High-current, high-voltage node; electrically connected to exposed metal tab for thermal and electrical conduction |
| G (Pin 1) | Gate | Low-impedance control input requiring <56 nC charge for full enhancement; sensitive to ESD |
| S (Pin 3) | Source | Power return path and gate reference; forms common node with driver ground in low-side configurations |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ II vertical structure | Reduces RDS(on) × Qg by ~35% vs. planar MOSFETs, enabling higher power density in PFC and LLC designs |
| 100% avalanche tested | Guarantees robustness against inductive kickback in motor drives and relay snubbers without derating |
| Low Ciss/Crss ratio | 1480 pF / 34 pF = 43.5 - improves Miller immunity and enables stable operation with moderate gate resistance |
| Optimized body diode | 350 ns trr, 4.6 µC Qrr - minimizes commutation loss and ringing in synchronous rectification and bridge circuits |
| ECOPACK® compliant | Meets RoHS and halogen-free requirements per ST's environmental grade definitions |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
|
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100–200 kHz with 380–400 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in continuous conduction mode (CCM) boost converter; handles 20 A peak inductor current. Use Value: 250 mΩ RDS(on) and 56 nC Qg reduce conduction + switching losses to <1.8 W, enabling >96% efficiency at full load. |
Use Scenario: Three-phase active front-end PFC in HVAC inverters, operating at 50–75 kHz with 600 V bus clamping. IC Role / Device Role / Timing Role: Fast-switching boost switch in interleaved PFC; subjected to repetitive 15 V/ns dv/dt stress. Use Value: 15 V/ns dv/dt rating and 650 mJ EAS prevent spurious turn-on and ensure reliable operation under line surge conditions. |
| Motor Drive Half-Bridge | UPS Inverter Output Stage |
|
Use Scenario: 3 kW BLDC inverter for industrial pumps, using six-pack D²PAK modules with forced-air cooling. IC Role / Device Role / Timing Role: High-side/low-side switch in 3-phase inverter leg; conducts 20 A RMS with 80 A pulsed peaks. Use Value: 0.65 °C/W RthJC and 12.6 A ID @ 100 °C allow compact heatsink design while maintaining TJ < 130 °C at full load. |
Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 48 VDC battery bank via 2-level inverter. IC Role / Device Role / Timing Role: Output bridge switch handling 20 A RMS sinusoidal current with zero-crossing commutation stress. Use Value: Body diode trr = 350 ns and Qrr = 4.6 µC limit reverse recovery loss to <0.35 W per device, improving thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 500 V Power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50 | Same die, TO-220 package; RthJC = 0.85 °C/W (vs. 0.65 °C/W); no tape-and-reel option | Preferred for prototyping or low-volume through-hole assembly; lower thermal performance limits power density | Select when manual soldering or socket-based validation is required; avoid in high-power density SMT designs |
| IPP60R280P7 | 650 V rating, 280 mΩ RDS(on), 34 nC Qg; CoolMOS™ P7 technology; higher VDS margin but higher conduction loss | Better suited for universal-input offline SMPS (85–265 VAC) with wider VDS safety margin | Choose for 650 V systems needing tighter gate charge control; not drop-in due to different VGS(th) and SOA |
Compared with STP20NM50, STB20NM50-1 offers superior thermal resistance and SMT scalability; versus IPP60R280P7, it delivers lower RDS(on) at 500 V but requires stricter bus voltage derating-making it optimal for fixed 400 V DC applications demanding minimal conduction loss.
Availability
STB20NM50-1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and motor drive inverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for STB20NM50-1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
STB20NM50-1 belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in telecom rectifiers, industrial SMPS, and renewable energy inverters where low RDS(on) and rugged avalanche performance are critical.
FAQ
What is the maximum continuous drain current at case temperature of 100 °C?
The STB20NM50-1 supports 12.6 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS2216 Rev 14. This rating accounts for thermal derating and safe operating area constraints, and assumes proper PCB copper area and heatsinking per the D²PAK footprint guidelines.
Is the body diode suitable for synchronous rectification?
No-the body diode is optimized for robustness and low Qrr in hard-switched freewheeling, not for synchronous rectification. Its 350 ns reverse recovery time and 4.6 µC Qrr are acceptable for boost/PFC freewheeling but exceed typical SR FET requirements; external Schottky or dedicated SR controllers are recommended for <100 ns trr applications.
Does STB20NM50-1 have lead-free and halogen-free packaging?
Yes-STB20NM50-1 is supplied in ECOPACK®-compliant D²PAK packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per ST's specification. The "ECOPACK" marking on the device and packaging documentation confirms compliance with ST's environmental grade definitions.
Can STB20NM50-1 replace STP20NM50 in existing TO-220 layouts?
No-it is not a direct replacement due to differing packages (D²PAK vs. TO-220), pinouts, thermal interfaces, and mounting methods. While electrically identical, the D²PAK requires re-layout for SMT pads, thermal vias, and solder stencil design; mechanical adaptation is not feasible without PCB revision.
STB20NM50-1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 550 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1480 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 192W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- I2PAK
STB20NM50-1 FAQ
1.How can I place an order for STB20NM50-1 through Aetrix?
Please submit a Request for Quotation (RFQ) for STB20NM50-1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STB20NM50-1 reliable?
The price and inventory of STB20NM50-1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB20NM50-1 is usually 5 days.
3.What payment methods are accepted for STB20NM50-1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB20NM50-1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STB20NM50-1?
STB20NM50-1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STB20NM50-1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STB20NM50-1?
For technical support, including STB20NM50-1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB20NM50-1 requirements.
6.How does Aetrix verify that STB20NM50-1 is sourced from the original manufacturer or authorized distributors?
All STB20NM50-1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB20NM50-1 meets industry standards.
7.What is the process for return or replacement of STB20NM50-1?
All STB20NM50-1 units undergo pre-shipment inspection (PSI). If there is an issue with STB20NM50-1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STB20NM50-1 part is unused and in its original packaging.
Return procedure for STB20NM50-1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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