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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STB20NM50FDT4

Name: STB20NM50FDT4
Brand: STMicroelectronics
SKU: STB20NM50FDT4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STB20NM50FDT4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: STB20NM50FDT4.pdf

Description:: MOSFET N-CH 500V 20A D2PAK

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Product details

Overview

STB20NM50FDT4 from STMicroelectronics is an N-channel 500 V, 20 A FDmesh™ Power MOSFET in D²PAK (TO-263) package with integrated fast-recovery body diode, R_DS(on) ≤ 0.22 Ω at V_GS = 10 V, Q_g = 38 nC, and 100% avalanche tested for robustness in hard-switching bridge topologies.

For engineers reviewing the STB20NM50FDT4 datasheet, STB20NM50FDT4 pinout, STB20NM50FDT4 application, or STB20NM50FDT4 equivalent, this device is selected for high-voltage ZVS phase-shift converters, industrial SMPS, and motor drive half-bridges where low gate charge, tight R_DS(on) distribution, and fast diode recovery are critical.

Technical Context

This MOSFET employs ST's FDmesh™ process to co-optimize conduction loss (R_DS(on) = 0.22 Ω), switching speed (t_r = 20 ns, t_f = 15 ns), and diode performance (t_rr = 245 ns, Q_rr = 2 nC). Its 500 V V_DSS, 20 A I_D, and 192 W P_TOT rating support continuous operation in high-efficiency offline converters.

The device features a 100% unclamped inductive switching (UIS) tested structure with E_AS = 700 mJ and dv/dt capability of 20 V/ns. Its low C_iss (1380 pF) and C_oss (290 pF) enable stable gate drive design with minimal Miller effect under 400 V bus conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 V DC bus designs with 25% margin for voltage transients
R_DS(on) max	0.25 Ω - ensures ≤ 100 W conduction loss at 20 A, enabling TO-263 thermal performance
Q_g	38 nC - enables efficient 100–300 kHz switching with standard gate drivers (e.g., STGAP2S)
t_rr	245 ns - minimizes diode reverse recovery loss in synchronous rectification and LLC resonant stages
E_AS	700 mJ - guarantees ruggedness against single-pulse inductive energy spikes in motor control
R_thj-case	2.8 °C/W - allows 192 W dissipation with ≤ 53 °C case-to-junction rise at 25 °C ambient

Pinout & Package

D²PAK (TO-263) surface-mount package with exposed drain pad for thermal enhancement and mechanical robustness; 3-terminal configuration optimized for high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Low-impedance gate terminal (R_g = 2.8 Ω) requiring <10 V drive for full enhancement; sensitive to ESD
2 (Drain)	High-side power path	Internally connected to large copper drain pad; primary heat transfer path to PCB ground plane
3 (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; tied to power ground in half-bridge

Key Features

Feature	Design Value
FDmesh™ silicon architecture	Simultaneous optimization of R_DS(on), Q_g, and diode t_rr-not achievable with planar or trench processes
Intrinsic fast-recovery body diode	t_rr = 245 ns, Q_rr = 2 nC at 150 °C-enables zero-voltage switching without external Schottky
100% UIS avalanche tested	Guarantees minimum 700 mJ single-pulse energy handling-no derating required for inductive loads
ECOPACK® lead-free packaging	RoHS-compliant D²PAK with second-level interconnect marked per JESD97-qualified for industrial reflow

Applications

Industrial SMPS

ZVS Phase-Shift Converter

Use Scenario: 1–3 kW telecom rectifier operating at 100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward topology; handles 20 A peak drain current with 500 V blocking.

Use Value: Low Q_g (38 nC) reduces gate driver losses; fast diode eliminates need for discrete anti-parallel SiC Schottky.

Use Scenario: 5 kW server PSU using full-bridge ZVS phase-shift architecture.

IC Role / Device Role / Timing Role: Lagging-leg switch subjected to hard commutation during zero-voltage turn-on.

Use Value: 245 ns t_rr and 20 V/ns dv/dt rating prevent diode-induced shoot-through and voltage overshoot.

Motor Drive Half-Bridge

UPS Inverter Stage

Use Scenario: 2.2 kW HVAC compressor inverter with 600 V DC link.

IC Role / Device Role / Timing Role: Upper switch in three-phase leg; conducts 20 A RMS with 150 °C junction temperature.

Use Value: R_thj-case = 2.8 °C/W enables direct PCB copper pour cooling-no heatsink needed below 1.5 kW.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC from 380 V DC bus.

IC Role / Device Role / Timing Role: Output H-bridge switch operating in PWM mode at 16 kHz with sinusoidal modulation.

Use Value: Tight R_DS(on) distribution (0.22–0.25 Ω) ensures balanced current sharing across parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FD	Same die, TO-220 package; R_thj-case = 0.65 °C/W vs. 2.8 °C/W; no exposed drain pad	Requires bolt-down heatsink; unsuitable for high-density SMT layouts	Select when through-hole assembly, higher power dissipation (>150 W), or mechanical mounting is mandatory
IPP60R099C6	650 V CoolMOS™; R_DS(on) = 0.099 Ω but Q_g = 62 nC; no integrated fast diode	Needs external SiC diode for ZVS; superior conduction loss above 10 A but slower switching	Select when >600 V bus, lower conduction loss priority, and external diode integration is acceptable

Compared with STP20NM50FD and IPP60R099C6, STB20NM50FDT4 uniquely balances 500 V rating, ultra-low Q_g, and monolithic fast diode-making it optimal for space-constrained, high-frequency ZVS converters where layout simplicity and diode reliability are critical.

Availability

STB20NM50FDT4 is available at Aetrix Electronics and suitable for industrial SMPS, ZVS phase-shift converters, and motor drive half-bridges requiring stable component supply, long-lifecycle availability, and RoHS-compliant SMT packaging.

Supply support for STB20NM50FDT4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's FDmesh™ Power MOSFET product line-engineered specifically for high-efficiency, high-frequency switched-mode power supplies where simultaneous optimization of conduction, switching, and diode performance is essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STB20NM50FDT4 supports 14 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the D²PAK package and ensures safe operation within its 150 °C maximum junction temperature rating under sustained load conditions.

Does this MOSFET require a gate resistor for stability in hard-switching applications?

Yes-a gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 15) to control dV/dt and prevent oscillation. The device's low gate input resistance (2.8 Ω) and 38 nC total gate charge make external gate resistance essential for reliable turn-on/turn-off timing and EMI control.

Can STB20NM50FDT4 replace STP20NM50FD in an existing TO-220-based design?

No direct drop-in replacement: STB20NM50FDT4 uses D²PAK (TO-263) surface-mount footprint versus TO-220 through-hole. Layout redesign is required for pad geometry, thermal relief, and solder profile. Electrical specs match closely, but thermal path differs significantly (R_thj-case = 2.8 vs. 0.65 °C/W).

Is the body diode suitable for synchronous rectification in LLC resonant converters?

Yes-the intrinsic fast-recovery diode has t_rr = 245 ns and Q_rr = 2 nC at 150 °C, verified in Table 8. It performs reliably in LLC secondary-side synchronous rectification up to 300 kHz, eliminating need for external Schottky diodes while maintaining low conduction loss and predictable recovery behavior.

STB20NM50FDT4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1380 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 192W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

STB20NM50FDT4 FAQ

1.How can I place an order for STB20NM50FDT4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STB20NM50FDT4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STB20NM50FDT4 reliable?

The price and inventory of STB20NM50FDT4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STB20NM50FDT4 is usually 5 days.

3.What payment methods are accepted for STB20NM50FDT4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STB20NM50FDT4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STB20NM50FDT4?

STB20NM50FDT4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STB20NM50FDT4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STB20NM50FDT4?

For technical support, including STB20NM50FDT4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STB20NM50FDT4 requirements.

6.How does Aetrix verify that STB20NM50FDT4 is sourced from the original manufacturer or authorized distributors?

All STB20NM50FDT4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STB20NM50FDT4 meets industry standards.

7.What is the process for return or replacement of STB20NM50FDT4?

All STB20NM50FDT4 units undergo pre-shipment inspection (PSI). If there is an issue with STB20NM50FDT4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STB20NM50FDT4 part is unused and in its original packaging.

Return procedure for STB20NM50FDT4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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