STMicroelectronics STB20NM50T4

Overview

STB20NM50T4 from STMicroelectronics is an N-channel 500 V, 20 A Power MOSFET in D²PAK (TO-263) package, featuring 250 mΩ max R_DS(on), 40–56 nC total gate charge, and 100% avalanche tested operation. It employs MDmesh™ II vertical strip architecture for ultra-low conduction and switching losses, targeting high-efficiency 400 V DC bus SMPS in server power supplies and industrial AC-DC converters.

For engineers reviewing the STB20NM50T4 datasheet, STB20NM50T4 pinout, STB20NM50T4 application, or STB20NM50T4 equivalent, key selection criteria include its 500 V V_DS, 200–250 mΩ R_DS(on) at V_GS = 10 V, 15 V/ns dv/dt ruggedness, 650 mJ single-pulse avalanche energy, and D²PAK thermal performance (R_thJC = 0.65 °C/W).

Technical Context

This MDmesh II MOSFET integrates a high-voltage vertical drift region with optimized strip layout to minimize both R_DS(on) × Q_g figure-of-merit and output capacitance (C_oss = 285 pF, C_oss,eq = 130 pF). Its low gate input resistance (1.6 Ω) and 1480 pF C_iss support fast, low-loss switching in hard-switched topologies.

The device includes an integral body diode with 350–435 ns reverse recovery time (T_J = 25–150 °C), 4.6–5.9 µC Q_rr, and 26–27 A I_RRM, enabling robust operation in flyback and resonant converters where diode recovery stress is critical.

Key Specifications

Pinout & Package

STB20NM50T4 uses the D²PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection. The package features gull-wing leads, 2.54 mm lead pitch, and a 15.85 mm maximum height per mechanical drawing DS2216 Rev 14 Figure 18.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP20NM50, STB20NM50T4 provides identical electrical specs in a surface-mount D²PAK package with enhanced thermal interface and automated assembly compatibility; versus IPP60R280P7XKSA1, it trades 50 V headroom for significantly lower R_DS(on), proven avalanche robustness, and tighter dv/dt immunity-critical for cost-sensitive 400 V bus designs.

Availability

STB20NM50T4 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC front-ends, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STB20NM50T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STB20NM50T4 belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating at 400–450 V DC bus voltages.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STB20NM50T4 supports 12.6 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 1 of DS2216 Rev 14. This rating accounts for thermal derating due to junction-to-case resistance (0.65 °C/W) and ambient thermal environment, and is validated under steady-state conduction conditions with proper PCB copper area.

Does STB20NM50T4 have an integrated body diode, and what are its key recovery parameters?

Yes, STB20NM50T4 includes a monolithic source-drain body diode rated for 20 A continuous and 80 A pulsed current. Key recovery parameters include 350 ns reverse recovery time (t_rr) at T_J = 25 °C, 4.6 µC reverse recovery charge (Q_rr), and 26 A peak reverse recovery current (I_RRM), all measured under standardized inductive load conditions per Figure 14 in DS2216.

Can STB20NM50T4 replace STP20NM50 in existing TO-220 designs?

No direct drop-in replacement is possible due to differing packages: STB20NM50T4 uses surface-mount D²PAK (TO-263), while STP20NM50 uses through-hole TO-220. Pinout alignment (G-D-S) is identical, but PCB layout, thermal pad design, and assembly process must be revised. Electrical specs are identical, making it a functional upgrade for new designs prioritizing automated assembly and thermal performance.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (V_GS(th)) is specified as 3–5 V at I_D = 250 µA, ensuring reliable turn-on with standard 10 V gate drive. This range avoids unintended conduction near 0 V while allowing compatibility with 5 V logic-level controllers when used with gate drivers that provide sufficient overdrive-no level-shifting is required for 10 V or higher drive rails.